UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) <11.5Ω@ VGS=10V, ID=0.6A * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N60ZG-AA3-R 1N60ZL-T92-B 1N60ZG-T92-B 1N60ZL-T92-K 1N60ZG-T92-K 1N60ZL-TN3-R 1N60ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package SOT-223 TO-92 TO-92 TO-252 1 G G G G Pin Assignment 2 3 D S D S D S D S Packing Tape Reel Tape Box Bulk Tape Reel 1 of 7 QW-R502-724.D 1N60Z Power MOSFET MARKING PACKAGE MARKING SOT-223 TO-252 TO-92 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-724.D 1N60Z Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 1.2 A Continuous Drain Current ID 1.2 A Pulsed Drain Current (Note 2) IDM 4.8 A Single Pulsed (Note 3) EAS 50 mJ Avalanche Energy Repetitive (Note 2) EAR 4.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns SOT-223 0.8 Power Dissipation (TA=25°C) PD TO-252 1.5 W TO-92 1 Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient SYMBOL SOT-223 TO-252 TO-92 θJA UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 150 100 140 UNIT °C/W 3 of 7 QW-R502-724.D 1N60Z Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS VGS=0V, ID=250μA VDS=600V, VGS=0V Forward VGS=20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.6A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD=300V, ID=1.2A, RG=50Ω (Note 2,3) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=480V, VGS=10V, Gate-Source Charge QGS ID=1.2A (Note 2,3) Gate-Drain Charge QGD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V, IS =1.2A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS=0V, IS=1.2A dIF/dt=100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% 3. Essentially Independent of Operating Temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 10 +5 -5 V μA μA μA V/°C 9.3 4.0 11.5 V Ω 120 20 3.0 150 25 4.0 pF pF pF 5 25 7 25 5.0 1.0 2.6 20 60 25 60 6.0 ns ns ns ns nC nC nC 1.4 V 1.2 A 4.8 A 0.4 2.0 160 0.3 ns μC 4 of 7 QW-R502-724.D 1N60Z Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-724.D 1N60Z Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit 12V Same Type as D.U.T. 50kΩ 0.2μF Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT 3mA VGS Charge Gate Charge Test Circuit Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveform Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-724.D 1N60Z Drain Current,ID (µA) Drain Current, ID (A) Continuous Drain-Source Diode Forward Current, IS (mA) TYPICAL CHARACTERISTICS Drain Current,ID (µA) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-724.D