UTC-IC 6N90_12

UNISONIC TECHNOLOGIES CO., LTD
6N90
Power MOSFET
6.2A, 900V N-CHANNEL
POWER MOSFET
1
TO-220
„
DESCRIPTION
The UTC 6N90 is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide costumers
with planar stripe and DMOS technology. This technology allows a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 6N90 is generally applied in high efficiency switch
mode power supplies.
„
1
TO-220F
1
TO-220F1
FEATURES
* RDS(ON) = 2.3Ω @VGS = 10 V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
6N90L-TA3-T
6N90G-TA3-T
6N90L-TF3-T
6N90G-TF3-T
6N90L-TF1-T
6N90G-TF1-T
Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
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QW-R502-492.C
6N90
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
900
V
Gate-Source Voltage
VGSS
±30
V
ID
6.2
A
Continuous (TC=25°C)
Drain Current
Pulsed (Note 2)
IDM
24
A
Single Pulsed (Note 3)
EAS
650
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
16.7
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
167
W
Power Dissipation
PD
TO-220F/TO220F1
56
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 34mH, IAS = 6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
„
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F/TO220F1
SYMBOL
θJA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJC
RATINGS
62.5
0.75
2.25
UNIT
°C/W
°C/W
°C/W
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6N90
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
900
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA
1.07
VDS=900V, VGS=0V
10
Drain-Source Leakage Current
IDSS
VDS=720V, TC=125°C
100
Forward
VGS=+30V, VDS=0V
+100
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
-100
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
5.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3.1A
1.85 2.3
Forward Transconductance
gFS
VDS=50V, ID=3.1A (Note 1)
5.5
DYNAMIC PARAMETERS
Input Capacitance
CISS
1360 1770
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz
110 145
Reverse Transfer Capacitance
CRSS
11
15
SWITCHING PARAMETERS
30
40
Total Gate Charge
QG
VGS=10V, VDS=720V, ID=6.2A
Gate to Source Charge
QGS
9.0
(Note 1, 2)
Gate to Drain Charge
QGD
12
Turn-ON Delay Time
tD(ON)
35
80
Rise Time
tR
90
190
VDD=450V, ID=6.2A, RG=25Ω
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
55 120
Fall-Time
tF
60 130
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
6.0
Maximum Body-Diode Pulsed Current
ISM
24
Drain-Source Diode Forward Voltage
VSD
IS=6.2A, VGS=0V
1.4
630
Body Diode Reverse Recovery Time
tRR
IS=6.2A, VGS=0V, dIF/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
QRR
6.9
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
UNIT
V
V/°C
µA
nA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-492.C
6N90
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
Unclamped Inductive Switching Test Circuit
VDD
VDS(t)
Time
tP
Unclamped Inductive Switching Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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