2302 2.0 Watt - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION CASE OUTLINE 55 BT- Style 1 The 2302 is a COMMON BASE transistor capable of providing 2 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 7.0 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 45 Volts 3.5 Volts 0.5 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 200 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Pin Pg Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance F = 2.3 GHz Vcb = 20 Volts Po = 2.0Watts As Above F = 2.3 GHz, Po = 2.0W 2.0 Collector to Emitter Breakdown Emitter to Base Breakdown Current Gain Output Capacitance Thermal Resistance Ic = 10 mA Ie = 1.0 mA Vce = 5 V, Ic = 100 mA F = 1.0 MHz, Vcb = 22 V 45 3.5 10 ηc VSWR1 BVces BVebo hFE Cob θjc TEST CONDITIONS MIN TYP MAX 0.3 8.0 40 UNITS Watt Watt dB % 20:1 Volts Volts 4.0 25 pF C/W o Initial Issue August 1994 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120