8A,200V Ultrafast Single Diode

WDW80DK40B Product Description
A,
400
V Ultrafast Dual Diode
80
80A,
A,4
00V
Features
�
Ultrafast recovery time
�
Soft Recovery characteristics
�
Low Recovery Loss
�
Low forward voltage
�
High reliability by planer design
�
Low leakage current
C
A2
A1
General Description
FRD from Winsemi utilizes advanced processing techniques to achieve
ultrafast recovery times and higher forward current. Its soft recovery
characteristics and high reliability suit for wide industrial applications.
Applications
� Freewheeling, Snubber, Clamp
� Inversion Welder
� PFC
� Plating Power Supply
� Ultrasonic Cleaner and Welder
� Converter & Chopper
� UPS
Absolute Maximum Ratings
Symbol
Value
Units
Maximum D.C.Reverse Voltage
400
V
VRRM
MaximumRepetitive Revers Voltage
400
V
Tc=110℃,Per Diode
40
A
IF(AV)
Average Forward Current
Tc=110℃,Per Package
80
A
RMS Forward Current
Tc=110℃,Per Diode
56
A
IFSM
No-Repetitive Peak Surge current
TJ=45℃,t=10ms,50Hz,Sine
400
A
PD
Power Dissipation
156
W
TJ
Junction Temperature
150
℃
-40~150
℃
VR
IF(RMS)
TSTG
Torque
RθJC
Parameter
Test Conditions
Storage Temperature Range
Module-to-Sink
Recommended
1.1
N.m
Thermal Resistance
Junction-to-Case
0.8
℃/W
6.0
g
Weight
WT-D004-Rev.A1 Jan.2014
WINSEM I
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M ICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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WDW80DK40B Product Description
A,
400
V Ultrafast Dual Diode
80
80A,
A,4
00V
Electrical Characteristics TC=25℃
Value
Symbol
IRM
Parameter
Test Conditions
Units
Min
Typ
Max
VR=400V
-
-
10
μA
VR=400V,TJ=125℃
-
-
150
μA
IF=40A
-
1.3
1.7
V
IF=40A,TJ=125℃
-
1.1
-
V
Reverse Leakage Current
VF
Forward Voltage Drop
Trr
Reverse Recovery Time
IF=1A,VR=30,di/dt=-200A/μs
-
22
-
ns
Trr
Reverse Recovery Time
IF=40A,VR=200V
-
52
-
ns
Max.Reverse Recovery Current
diF/dt=-200A/μs,TJ=25℃
-
4.5
-
A
Reverse Recovery Time
IF=40A,VR=200V
-
71
-
ns
Max.Reverse Recovery Current
diF/dt=-200A/μs,TJ=125℃
-
9
-
A
IRRM
Trr
IRRM
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WDW80DK40B Product Description
A,
400
V Ultrafast Dual Diode
80
80A,
A,4
00V
Typical Performance Curres
Fig.1 Forward Voltage Drop vs
Forward Current
Fig.2 Reverse Recovery Time vs diF/dt
Fig.3 Reverse Recovery Current vs diF/dt
Fig.4 Reverse Recovery Charge vs diF/dt
Fig.5 Dynamic Parameters vs Junction
Temperature
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Fig.6 Transient Thermal Impedance
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WDW80DK40B Product Description
A,
400
V Ultrafast Dual Diode
80
80A,
A,4
00V
Fig.7 Reverse Recovery Parameter Test circuit
Fig.8 reverse Recovery Waveform and definitions
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WDW80DK40B Product Description
A,
400
V Ultrafast Dual Diode
80
80A,
A,4
00V
To-3PB Package Dimension
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WDW80DK40B Product Description
A,
400
V Ultrafast Dual Diode
80
80A,
A,4
00V
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : 86-0755-82506257
FAX : 86-0755-82506299
Web Site : www.winsemi.com
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M ICROELECTRON ICS
Tel : 0755-82506288
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