MUR8030Y ® Pb MUR8030Y Pb Free Plating Product 80 Ampere,300 Volt Planar Passivation Ultra Fast Recovery Epitaxial Diode TO-3PN/TO-3PB APPLICATION · · · · · · · Cathode(Bottom Side Metal Heatsink) Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS Anode PRODUCT FEATURE Cathode · Ultrafast Recovery Time · Soft Recovery Characteristics Anode Internal Configuration · Low Recovery Loss LEFT PIN RIGHT PIN · Low Forward Voltage · High Surge Current Capability BOTTOM SIDE HEAT SINK Note: Pins Left & Right must be electrically connected at the printed circuit board. · Low Leakage Current GENERAL DESCRIPTION MUR8030Y using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. T C =25°C unless otherwise specified ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions Values VR Maximum D.C. Reverse Voltage VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Forward Current TC=100°C 80 IF(RMS) RMS Forward Current TC=100°C 110 IFSM Non-Repetitive Surge Forward Current TJ=45°C,t=10ms, 50Hz, Sine 640 PD Power Dissipation TJ Unit 300 V A 250 W Junction Temperature -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C Torque RθJC Module-to-Sink 1.1 N.m 0.5 °C /W 6 g Recommended（M3） Junction-to-Case Thermal Resistance Weight ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. Typ. Max. Unit IRM Maximum Reverse Leakage Current VR = 300V VR = 300V, TJ = 125°C VF Forward Voltage 10 μA 10 mA IF=80A 1.35 IF=80A,TJ=125°C 1.25 30 ns IF =80A,VR =150V, 50 ns V trr Reverse Recovery Time trr IRRM Reverse Recovery Time Maximum Reverse Recovery Current diF/dt = -200A/μs 5 A trr IRRM Reverse Recovery Time IF = 80A,VR = 150V, 95 ns Maximum Reverse Recovery Current diF/dt = -200A/μs , TJ=125°C 9 0.6 06 A S Rev.05 © 2006 Thinki Semiconductor Co., Ltd. (IF = 1A, diF/dt = -200A/μs, VR = 30V) 1.5 Page 1/3 http://www.thinkisemi.com/ MUR8030Y ® 150 160 trr (ns) IF(A) 120 125°C 120 80 40 25°C 125°C 90 60 30 25°C 0 0 0 0.4 0.8 1.2 1.6 100 2 VF(V) 300 400 500 diF/dt（A/μs） Figure1. Forward Voltage Drop vs Forward Current Figure2. Reverse Recovery Time vs diF/dt 1000 30 25 800 125°C 20 QRRM(nc) IRRM(A) 200 15 125°C 600 25°C 400 10 200 5 25°C 0 0 100 200 300 400 100 500 200 400 500 diF/dt（A/μs） diF/dt（A/μs） Figure3. Reverse Recovery Current vs diF/dt Figure4. Reverse Recovery Charge vs diF/dt 1 100 80 ZthJC (K/W) DC 60 IF(A) 300 40 0.1 20 0 0.01 25 50 75 100 125 150 175 TC(℃) Figure5.Forward current vs.Case temperature Rev.05 © 2006 Thinki Semiconductor Co., Ltd. 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) Figure6. Transient Thermal Impedance Page 2/3 http://www.thinkisemi.com/ MUR8030Y ® Figure7. Diode Reverse Recovery Test Circuit and Waveform Dimensions in Millimeters Fig8. Package Outline Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 3/3 http://www.thinkisemi.com/