WDW80S30B Product Description 80A,300V Ultrafast Single Diode Features � Ultrafast recovery time � Soft Reverse Recovery characteristics � Low Recovery Loss � Low forward voltage � High Surge Current Capability � Low leakage current General Description FRD from Winsemi utilizes advanced processing techniques to achieve ultrafast recovery times and higher forward current Its soft recovery characteristics and high reliability suit for wide industrial applications. Applications � Freewheeling, Snubber, Clamp � Inversion Welder � PFC � Plating Power Supply � Ultrasonic Cleaner and Welder � Converter & Chopper � UPS Absolute Maximum Ratings Symbol Value Units Maximum D.C.Reverse Voltage 300 V VRRM MaximumRepetitive Revers Voltage 300 V IF(AV) Average Forward Current Tc=110℃,Per Diode 80 A RMS Forward Current Tc=110℃,Per Diode 110 A IFSM No-Repetitive Peak Surge current TJ=45℃,t=10ms,50Hz,Sine 640 A PD Power Dissipation 250 W TJ Junction Temperature 150 ℃ -55~150 ℃ VR IF(RMS) TSTG Torque RθJC Parameter Test Conditions Storage Temperature Range Module-to-Sink Recommended 1.1 N.m Thermal Resistance Junction-to-Case 0.5 ℃/W 6.0 g Weight WT-D006-Rev.A1 Apr.2014 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 0713 WDW80S30B Product Description 80A,300V Ultrafast Single Diode Electrical Characteristics TC=25℃ Value Symbol IRM VF Parameter Test Conditions Units Min Typ Max VR=300V - - 10 μA VR=300V,TJ=125℃ - - 10 mA IF=80A - 1.35 1.5 V IF=80A,TJ=125℃ - 1.25 - V Reverse Leakage Current Forward Voltage Drop Trr Reverse Recovery Time IF=1A,VR=30,diF/dt=-200A/μs - 30 - ns Trr Reverse Recovery Time IF=80A,VR=150V - 50 - ns - 5 - A - 95 - ns - 9 - A - 0.6 - - IRRM Trr IRRM diF/dt= -200A/ μs Max.Reverse Recovery Current Reverse Recovery Time IF=80A,VR=150V Max.Reverse Recovery Current diF/dt= -200A/μs,TJ=125℃ S WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 2/6 WDW80S30B Product Description 80A,300V Ultrafast Single Diode 150 160 90 t rr( ns ) I F( A) 1 2 5℃ 120 1 2 5℃ 120 80 60 2 5℃ 40 30 25℃ 0 0 0 0 .4 0 .8 1 .2 1 .6 100 2 200 400 300 500 diF /dt( A/u s) V F( V) Fig.1 Forward Voltage Drop vs Forward Fig.2 Reverse Recovery Time vs diF/dt Current 30 1000 25 800 I RRM(A) Q RRM( nc ) 1 2 5℃ 20 15 1 2 5℃ 600 25℃ 400 10 5 200 2 5℃ 0 0 200 100 300 500 400 100 200 di F/dt(A/us) 300 400 500 diF / dt(A/ us) Fig.3 Reverse Recovery Current vs diF/dt Fig.4 Reverse Recovery Charge vs diF/dt 1 100 80 Z thJC(K /W) DC IF (A) 60 40 0 .1 20 0 0 .0 1 25 50 75 100 125 0.001 175 150 Fig.5 Forward current vs.Case temperature WIN SEM I M ICROELECTRON ICS WIN SEM I 0 .1 1 10 Rectangular Pulse Duration(seconds) T C (℃ ) www.winsemi.com 0 .0 1 M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I Fig.6 Transient Thermal Impedance M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 3/6 WDW80S30B Product Description 80A,300V Ultrafast Single Diode Fig.7 Diode Reverse Recovery Test Circuit and Waveform WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 4/6 WDW80S30B Product Description 80A,300V Ultrafast Single Diode TO-3PB Package Dimension Unit:mm E A ФP 符 号 symbol M in Max A 4 . 60 5. 00 B 2 . 90 3. 20 B1 1 . 90 2. 20 b 0 . 90 1. 10 c 0 . 50 0. 70 D 19. 40 20. 40 E 15. 40 15. 80 L2 D Q F e B1 L B e WIN SEM I M ICROELECTRON ICS www.winsemi.com Q1 b WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I c M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I 5 . 45（TYP ) F 1 . 40 1. 60 L 19. 50 20. 50 L2 3 . 30 3. 70 Q 4 . 90 5. 10 Q1 1 .3 0 1. 50 P 3 . 10 3. 50 M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 5/6 WDW80S30B Product Description 80A,300V Ultrafast Single Diode NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002 Post Code : 518040 Tel : +86-755-8250 6288 FAX : +86-755-8250 6299 Web Site : www.winsemi.com WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 6/6