WFD2N60B Product Description Silicon N-Channel MOSFET Features D � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) G S General Description This Power MOSFET is produced using Winsemi's advanced planar D stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply . G S DPAK Absolute Maximum Ratings Symbol VDSS Value Units Drain Source Voltage Parameter 600 V Continuous Drain Current(@Tc=25℃) 2.0 A Continuous Drain Current(@Tc=100℃) 1.3 A 8 A ±30 V ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 121 mJ EAR Repetitive Avalanche Energy (Note1) 4.5 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.4 V/ ns 46 W 0.35 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Channel Temperature Thermal Characteristics Symbol Value Parameter Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 2.7 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 110 ℃/W WT-F049-Rev.A1 Sep.2013 WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS WINSEM I M ICROELECTRONICS 1011 WFD2N60B Product Description Silicon N-Channel MOSFET Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Drain cut -off current Test Condition Min Type Max Unit IGSS VGS=±30V,VDS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V VDS=600V,V GS=0V - - 10 µA VDS=480V,Tc=125℃ - 100 µA IDSS Drain -source breakdown voltage V(BR)DSS ID=250 µA,VGS=0V 600 - - V Gate threshold voltage VGS(th) VDS = VGS ,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=1A - 4.5 5.0 Ω Forward Transconductance gfs VDS=50V,ID=1A - 2.25 - S Input capacitance Ciss VDS=25V, - 190 230 Reverse transfer capacitance Crss VGS=0V, - 1.8 2.1 Output capacitance Coss f=1MHz - 15 20 VDD=300V, - 23 45 ID=2A, - 7 23 RG=25Ω, - 24 46 - 22 43 - 5.3 6 - 1.7 - - 1.8 - Turn-on Rise time tr Turn-on delay time Td(on) B Switching time pF ns Turn-off Fall time tf Turn-off delay time (Note4,5) Td(off) Total gate charge(gate-source VDD=480V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=2A (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 2.0 A Pulse drain reverse current IDRP - - - 8.0 A Forward voltage(diode) VDSF IDR=2.0A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=2.A,VGS=0V, - 180 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 0.72 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=56mH IAS=2A,VDD=50V,RG=25Ω ,Starting TJ=25℃ 3.ISD≤2A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 2/8 WFD2N60B Product Description Silicon N-Channel MOSFET Top 10 VG S 15V 10V 8V 7V 。 150 C ID[A] ID[A] 6.5V 6V 5.5V B ottom 5 V 1 1 。 25 C N o te s: 1 .2 5 0 u s p u lse te st 2 .Tc=2 5 。 C 0 .1 0 .1 1 10 2 4 Notes: 1.250us pulse test 2.V D S =40V 6 8 10 VG S [V] V D S [V ] Fig.1 On-Region Characteristics Fig.2 Transfer characteristics 7 .5 7 .0 V G S =10V I DR [A] R DS (on) [Ω] 6 .5 6 .0 25。 C 1 5 .5 V G S =20V 150。 C 5 .0 4 .5 Notes: 1.250us pulse test 2.V G S =0V 。 Note:T J=25 C 4 .0 0 .5 1 .0 2 .0 1 .5 2 .5 3 .0 0 .1 0 .4 3 .5 0 .5 0 .6 0 .7 0 .8 I D [A] 0 .9 1 .0 1 .1 1 .2 1 .3 VS D [V] Fig.4 Body Diode Forward Voltage Variation With Source Current And temperature Fig.3 On Resistance variation vs Drain Current and Gate Voltage 12 400 Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd 360 C rss= C gd VG S Gate source Voltage[V] Capacitance[pF] VD S =480V 10 320 Cis s 280 240 Co s s 200 160 Notes: 1. V DS = 0V 2. f =1MHz 120 Cr s s 80 VD S =300V V D S =120V 8 6 4 2 40 0 100 1 0 -1 0 1 01 0 1 VD S [V] WIN SEM I M ICROELECTRON ICS WIN SEM I 3 4 5 Q g Toltal Gate Charge[nC] Fig.5 Capacitance Characteristics www.winsemi.com 2 M ICROELECTRON ICS Tel : +86-755-8250 6288 Fig.6 Gate Charge Characteristics WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 3/8 WFD2N60B Product Description Silicon N-Channel MOSFET 3 .0 1 .2 2 .5 R DS(on) (Normalized) BV D SS(Normalized) 1 .1 1 .0 Notes: 1.VG S =0V 2.ID =250uA 0 .9 0 .8 -7 5 -5 0 -2 5 0 25 50 75 。 T j [ C] 100 125 2 .0 1 .5 1 .0 N otes: 1.V G S =10V 2.I D=1.0A 0 .5 0 .0 -7 5 150 -5 0 Fig.7 Breakdown Voltage Variation Vs,Temperature -2 5 0 25 50 。 T j [ C] 75 100 125 150 Fig.8 On-Resistance Variation vs.temperature 2 .0 Operation in This Area is limited by R DS(on) 101 1 .8 1 .6 100us 1 .4 ID [A] 100 I D[A] 1m s 10ms DC 1 .2 1 .0 0 .8 0 .6 1 0 -1 0 .4 Notes: 1 . T c=25。 C 。 2.TJ=150 C Single pulse 0 .2 0 .0 25 1 0 -2 100 10 1 10 2 10 50 75 125 150 Tc [ C] VD S [V] Fig.9 Maximum Safe Operation Area ZθJC(t),Thermal REsponse 100 。 3 Fig.10 Maximum Drain Current vs Case Temperature D = 0. 5 * N o te : 100 1.Zθ J C (t)=2.87 。 C/W Max. 2.Duty Factor,D=t1/t2 3.T JM*T C=P DM* Z θ J C (t) 0 .2 0 .1 0 .0 5 PD M 0 .0 2 1 0 -1 0 .0 1 t1 t2 Single Pulse 1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 00 1 01 t1 ,Square Wave Pulse Duration [sec] Fig.11 Transient Thermal Response curve WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 4/8 WFD2N60B Product Description Silicon N-Channel MOSFET 50K Ω 12V VG S Same type as D U T Qg 200nF 10V 300nF VD S VG S Qg s Qg d DUT 3m A Ch a rg e Fig.12 Gate Test Circuit & Waveform VD S RG RL VD S 90% VD D VG S VG S DUT 10V 10% td(on) tr td(off) to n tf to f f Fig.13 Resistive Switching Test Circuit & Waveform L EA S = VD S B V DSS B V D S S - VD D B V DSS IA S ID RG VD D DUT 10V 1 L IA S 2 2 I D( t) VD S( t ) VD D tp tp Tim e Fig.14 Unclamped Inductive Switching Test Circuit & Waveform WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 5/8 WFD2N60B Product Description Silicon N-Channel MOSFET DUT VD S IS D L Driver RG Sam e Type as DUT VG S VD D dv/dt controlled by RG IS D conteolled by pulse period VG S D = (Driver) Gate Pulse Width Gate Pulse Period 10V IF M ,Body Diode Forward Current IS D di/dt (DUT) IR M Body Diode Reverse Current VD S (DUT) Body Diode Recovery dv/dt VD D VS D Body Diode Forward Voltage Drop Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 6/8 WFD2N60B Product Description Silicon N-Channel MOSFET DPAK Package Dimension U n it:m m E A F D D1 E1 H 符 号 symbol M IN MAX A 2 . 19 2 . 38 A1 - 0 . 13 b 0 .6 4 c 0 . 46 0 . 61 D 5 . 97 6 . 22 D1 0 . 89 1 . 27 E 6 . 35 6 . 73 E1 5 . 21 5 . 46 0. 89 A1 L2 b c e 2 . 28TYP e θ L F 0 . 46 0 . 61 H 9 . 65 10 . 41 L 1 . 40 1 . 78 L2 0 . 64 1 . 01 θ WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS 0 。 WIN SEM I 8 。 M ICROELECTRON ICS 7/8 WFD2N60B Product Description Silicon N-Channel MOSFET NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002 Post Code : 518040 Tel : +86-755-8250 6288 FAX : +86-755-8250 6299 Web Site : www.winsemi.com WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 8/8