SBP13007 SBP13007--S High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol amet er Par Para mete Tes estt Condi Condittions Value Units VCES Collector-Emitter Voltage VBE = 0 700 V VCEO Collector-Emitter Voltage IB = 0 400 V VEBO Emitter-Base Voltage IC = 0 9.0 V IC Collector Current 8.0 A ICP Collector pulse Current 16 A IB Base Current 4.0 A IBM Base Peak Current 8.0 A PC tP = 5ms Total Dissipation at Tc = 25℃ 80 Total Dissipation at Ta = 25℃ 2.1 W TJ Operation Junction Temperature - 40 ~ 150 ℃ TSTG Storage Temperature - 40 ~ 150 ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) cteri stics Thermal Chara Charac teris Symbol amet er Par Para mete Value RθJc Thermal Resistance Junction to Case 1.56 ℃/W RθJA Thermal Resistance Junction to Ambient 62.5 ℃/W Jan 2009. Rev. 0 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Units SBP13007 SBP13007--S Electrical Characteristics (TC=25℃ unless otherwise noted) Value Symbol amet er Par Para mete VCEO(sus) Collector-Emitter Breakdown Voltage Tes estt Condi Condittions Ic=10mA,Ib=0 Min Typ Max 400 - - - - VCE(sat) Collector-Emitter Saturation Voltage 1.0 V 2.5 Ic=8.0A,Ib=2.0A Ic=5.0A,Ib=1.0A V 0.5 Ic=2.0A,Ib=0.4A Ic=5.0A,Ib=1.0A Units - - 2.5 - - - - - - Vce=5V,Ic=2.0A 10 - 40 Vce=5V, Ic=5.0A 5 - 40 1.5 3.0 0.17 0.4 V Tc=100℃ Ic=2.0A,Ib=0.4A VBE(sat) Base-Emitter Saturation Voltage Ic=5.0A,Ib=1.0A Ic=5.0A,Ib=1.0A 1.2 1.6 1.5 V V Tc=100℃ ICBO hFE Collector-Base Cutoff Current Vcb=700V (Vbe=-1.5V) Vcb=700V, Tc=100℃ DC Current Gain ad Resist Resistiive Lo Loa ts Storage Time tf Fall Time 1.0 5.0 mA VCC=125V , IB1=1.0A , Tp=25㎲ Ic=5.0A IB2=-1.0A ㎲ ctive Load Indu Induc ts Storage Time tf Fall Time ctive Load Indu Induc ts Storage Time tf Fall Time VCC=15V ,Ic=5A IB1=1.0A , IB2=-2.5A L=0.35mH,Vclamp=300V - 0.8 2.0 - 0.06 0.12 VCC=15V ,Ic=1A IB1=0.4A , IB2=-1.0A L=0.35mH,Vclamp=300V Tc=100℃ - 1.0 3.0 - 0.07 0.15 ㎲ ㎲ Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 Steady, keep you advance SBP13007 SBP13007--S Fig. 1 DC Current Gain ation Voltage Fig. 2 Collector-Emitter Satur Satura Fig. 3 BaseBase---Emitter Saturation Voltage ing Fig.5 Power Derat Derating Fig. 4 Safe Operation Area Fig.6 Reverse Biased Safe Operation Area 3/5 Steady, keep you advance SBP13007 SBP13007--S Resistive Load Switching Test Ci Cirrcuit Inductive Load Switching & RBSOA Test Ci Cirrcuit 4/5 Steady, keep you advance SBP13007 SBP13007--S ge Dimension TO-220 Packa Packag Unit:mm 5/5 Steady, keep you advance