SBP13009-S High Voltage Fast-Switching NPN Power Transistor Features � Very High Switching Speed � High Voltage Capability � Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCES Collector -Emitter Voltage VBE=0 700 V VCEO Collector -Emitter Voltage IB=0 400 V VEBO Emitter-Base Voltage IC=0 9.0 V IC Collector Current 12 A ICP Collector pulse Current 25 A IB Base Current 6.0 A IBM Base Peak Current 12 A tP=5ms Total Dissipation at Tc*=25℃ 100 Total Dissipation at Ta*=25℃ 2.2 PC W TJ Operation Junction Temperature -40~150 ℃ TSTG Storage Temperature -40~150 ℃ Tc :Case temperature (good cooling) Ta :Ambient temperature (without heat sink) Thermal Characteristics Symbol Parameter RӨJC Thermal Resistance Junction to Case RӨJA Thermal Resistance Junction to Ambient Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. Value Units 1.25 ℃/W 40 ℃/W SBP13009-S Electrical Characteristics(Tc=25℃ Symbol VCEO(sus) unless otherwise noted) Parameter Test Conditions Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 Value Min Typ Max 400 - - Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A VCE(sat) Collector -Emitter Saturation Voltage Base -Emitter Saturation Voltage - - - Vce=5V,Ic=5.0A 10 - 40 Vce=5V,Ic=8.0A 6 - 40 1.5 3.0 0.17 0.4 - 0.8 2.0 - 0.04 0.1 - 0.8 2.5 - 0.05 0.15 Collector -Base Cutoff Current Vcb=700V (Vbe=-1.5V) Vcb=700V,Tc=100℃ DC Current Gain Storage time tf Fall Time VCC=125V,Ic=6.0A IB1=1.6A,IB2=-1.6A TP=25µs Inductive Load ts VCC=15V,Ic=5A IB1=1.6A,Vbe(off)=5V L=0.35mH,Vclamp=300 V Storage Time tf Fall Time Inductive Load ts Storage Time tf Fall Time 1.2 1.6 1.5 1.0 5.0 V V V mA - Resistive Load ts 2.0 - Ic=8.0A,Ib=1.6A V 1.5 - Tc=100℃ hFE 1.0 - Ic=8.0A,Ib=1.6A ICBO - - Ic=5.0A,Ib=1.0A VBE(sat) - - Tc=100℃ V 0.5 Ic=12A,Ib=3.0A Ic=8.0A,Ib=1.6A Units VCC=15V,Ic=1A IB1=0.4A,Vbe(off)=5V L=0.2mH,Vclamp=300V Tc=100℃ µs µs µs Note: Pulse Test : Pulse Width300,Duty cycle 2% 2/5 Steady, all for your advance SBP13009-S Fig.1 DC Current Gain Fig.3 Bade-Emitter Saturation Voltage Fig.5 Power Derating Fig.2 Collector -Emitter Saturation Voltage Fig.4 Safe Operation Area Fig.6 Reverse Biased Safe Operation Area 3/5 Steady, all for your advance SBP13009-S Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 Steady, all for your advance SBP13009-S To-220 Package Dimension Unit:mm 5/5 Steady, all for your advance