SBP13009-K HighVoltageFast-SwitchingNPNPowerTransistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter Value Units VBE=0 700 V Collector -Emitter Voltage IB=0 400 V VEBO Emitter-Base Voltage IC=0 9.0 V IC Collector Current 12 A ICP Collector pulse Current 25 A IB Base Current 6.0 A IBM Base Peak Current 12 A VCES Collector -Emitter Voltage VCEO Test Conditions tP=5ms Total Dissipation at Tc*=25℃ 100 Total Dissipation at Ta*=25℃ 2.2 W PC TJ Operation Junction Temperature -40~150 ℃ TSTG Storage Temperature -40~150 ℃ Tc :Case temperature (good cooling) Ta :Ambient temperature (without heat sink) Thermal Characteristics Symbol Parameter RӨJC Thermal Resistance Junction to Case RӨJA Thermal Resistance Junction to Ambient Rev.A Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Value Units 1.25 ℃/W 40 ℃/W SBP13009-K Electrical Characteristics(Tc=25℃ Symbol unless otherwise noted) Parameter Test Conditions Collector-Emitter Breakdown Voltage VCEO(sus) Ic=10mA,Ib=0 Value Min Typ Max 400 - - - - Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A VCE(sat) Collector -Emitter Saturation Voltage - - Base -Emitter Saturation Voltage - - - - Vce=5V,Ic=5.0A 8 - 40 Vce=5V,Ic=8.0A 5 - 40 Ic=8.0A,Ib=1.6A Ic=8.0A,Ib=1.6A Tc=100℃ ICBO hFE Collector -Base Cutoff Current Vcb=700V (Vbe=-1.5V) Vcb=700V,Tc=100℃ DC Current Gain V 2.5 - Ic=5.0A,Ib=1.0A VBE(sat) 2.0 - Tc=100℃ V 0.5 Ic=12A,Ib=3.0A Ic=8.0A,Ib=1.6A Units 2.0 1.2 1.6 1.5 1.0 5.0 V V V mA Resistive Load ts Storage time tf Fall Time VCC=125V,Ic=6.0A IB1=1.6A,IB2=-1.6A TP=25µs Inductive Load ts Storage Time tf Fall Time VCC=15V,Ic=5A IB1=1.6A,Vbe(off)=5V L=0.35mH,Vclamp=300 V Inductive Load ts Storage Time tf Fall Time VCC=15V,Ic=1A IB1=0.4A,Vbe(off)=5V L=0.2mH,Vclamp=300V Tc=100℃ 1.5 3.0 0.17 0.4 - 0.8 2.0 - 0.04 0.1 - 0.8 2.5 - 0.05 0.15 µs µs µs Note: Pulse Test : Pulse Width300,Duty cycle 2% 2/5 Steady, keep you advance SBP13009-K Fig.1 DC Current Gain Fig.3 Bade-Emitter Saturation Voltage Fig.5 Power Derating Fig.2 Collector -Emitter Saturation Voltage Fig.4 Safe Operation Area Fig.6 Reverse Biased Safe Operation Area 3/5 Steady, keep you advance SBP13009-K Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 Steady, keep you advance SBP13009-K 0 Pack age Dim ension To-22 220 cka Dime Unit:mm 5/5 Steady, keep you advance