WINSEMI SBP13009-K

SBP13009-K
HighVoltageFast-SwitchingNPNPowerTransistor
Features
■ Very High Switching Speed
■ High Voltage Capability
■ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
Switching
characteristics required such as
lighting
system,switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VBE=0
700
V
Collector -Emitter Voltage
IB=0
400
V
VEBO
Emitter-Base Voltage
IC=0
9.0
V
IC
Collector Current
12
A
ICP
Collector pulse Current
25
A
IB
Base Current
6.0
A
IBM
Base Peak Current
12
A
VCES
Collector -Emitter Voltage
VCEO
Test Conditions
tP=5ms
Total Dissipation at Tc*=25℃
100
Total Dissipation at Ta*=25℃
2.2
W
PC
TJ
Operation Junction Temperature
-40~150
℃
TSTG
Storage Temperature
-40~150
℃
Tc :Case temperature (good cooling)
Ta :Ambient temperature (without heat sink)
Thermal Characteristics
Symbol
Parameter
RӨJC
Thermal Resistance Junction to Case
RӨJA
Thermal Resistance Junction to Ambient
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Value
Units
1.25
℃/W
40
℃/W
SBP13009-K
Electrical Characteristics(Tc=25℃
Symbol
unless otherwise noted)
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage
VCEO(sus)
Ic=10mA,Ib=0
Value
Min
Typ
Max
400
-
-
-
-
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
VCE(sat)
Collector -Emitter Saturation Voltage
-
-
Base -Emitter Saturation Voltage
-
-
-
-
Vce=5V,Ic=5.0A
8
-
40
Vce=5V,Ic=8.0A
5
-
40
Ic=8.0A,Ib=1.6A
Ic=8.0A,Ib=1.6A
Tc=100℃
ICBO
hFE
Collector -Base Cutoff Current
Vcb=700V
(Vbe=-1.5V)
Vcb=700V,Tc=100℃
DC Current Gain
V
2.5
-
Ic=5.0A,Ib=1.0A
VBE(sat)
2.0
-
Tc=100℃
V
0.5
Ic=12A,Ib=3.0A
Ic=8.0A,Ib=1.6A
Units
2.0
1.2
1.6
1.5
1.0
5.0
V
V
V
mA
Resistive Load
ts
Storage time
tf
Fall Time
VCC=125V,Ic=6.0A
IB1=1.6A,IB2=-1.6A
TP=25µs
Inductive Load
ts
Storage Time
tf
Fall Time
VCC=15V,Ic=5A
IB1=1.6A,Vbe(off)=5V
L=0.35mH,Vclamp=300
V
Inductive Load
ts
Storage Time
tf
Fall Time
VCC=15V,Ic=1A
IB1=0.4A,Vbe(off)=5V
L=0.2mH,Vclamp=300V
Tc=100℃
1.5
3.0
0.17
0.4
-
0.8
2.0
-
0.04
0.1
-
0.8
2.5
-
0.05
0.15
µs
µs
µs
Note:
Pulse Test : Pulse Width300,Duty cycle 2%
2/5
Steady, keep you advance
SBP13009-K
Fig.1 DC Current Gain
Fig.3 Bade-Emitter Saturation Voltage
Fig.5 Power Derating
Fig.2 Collector -Emitter Saturation Voltage
Fig.4 Safe Operation Area
Fig.6 Reverse Biased Safe Operation Area
3/5
Steady, keep you advance
SBP13009-K
Resistive Load Switching Test Circuit
Inductive Load Switching & RBSOA Test Circuit
4/5
Steady, keep you advance
SBP13009-K
0 Pack
age Dim
ension
To-22
220
cka
Dime
Unit:mm
5/5
Steady, keep you advance