8A 60 WTF TF8A 8A6 al Triod e Th yri stor Bi-Di Dirrection onal riode Thy ris Features ■ Repetitive Peak off -State Voltage:600V ■ R.M.S On-State Current(IT(RMS)=8A) ■ High Commutation dv/dt ■ Isolation Voltage(VISO=1500V AC) ■ Halogen free(WTF8A60-HF) General Description This device is fully isolated package suitable for AC switching application , phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.This device is approved to comply with applicable requirements by underwriters laboratories lnc. By using an internal ceramic pad , the TO220F series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (file ref.:E347423) Absolute Maximum Ratings (TJ=25℃ symbol Parameter unless otherwise specified) Ratings Units 600 V 8.0 A 80/88 A I2t 32 A2s Peak Gate Power Dissipation 5.0 W Average Gate Power dissipation 0.5 W IGM Peak Gate Current 2.0 A VGM Peak Gate Voltage 10 V VISO Isolation Breakdown Voltage(R.M.S.) 1500 V Operating Junction Temperature -40~125 ℃ Storage Temperature -40~150 ℃ 2.0 g VDRM Repetitive Peak Off-State Voltage IT(RMS) R.M.S On-State Current ITSM Surge On-State Current condition Tc=89℃ One Cycle, 50Hz/60Hz, Peak,Non-Repetitive I2t PGM PG(AV) TJ TSTG A.C.1minute Mass Rev.A May.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WTF 8A 60 TF8A 8A6 Electrical Characteristics(Tc=25℃ unless otherwise noted) Symbol Items conditions Repetitive Peak Off-State Unit Min Typ Max - - 2.0 mA - - 1.4 V - - 30 - - 30 VD=VDRM,Single Phase, Half IDRM Wave TJ=125℃ Current VTM Ratings Peak On-State Voltage IT=12A,Inst.Measurement GT1 Ⅰ - I GT1 Ⅱ - Ⅲ - - 30 GT1 Ⅰ - - 1.5 V GT1 Ⅱ - - 1.5 V- Ⅲ - - 1.5 0.2 - - V 10 - - V/µs - 15 - mA - - 3.7 ℃/W I + I GT3 + V - GT3 VGD Gate Trigger Current Gate Trigger Voltage TJ=125℃,VD=1/2VDRM Critical Rate of Rise Off-State TJ=125℃,[di/dt]c=-4.0A/ms, Voltage at Commutation Rth（j-c） VD=6V,RL=10Ω Non-Trigger Gate Voltage (dv/dt)c IH VD=6V,RL=10Ω VD=2/3VDRM Holding Current Thermal Impedance Junction to case mA V 2/6 Steady, keep you advance 8A 60 WTF TF8A 8A6 1.Gate Ch aracteri sti cs Fig Fig1 Cha ris tic ate Curr ent vs.Max Fig.3 On St Sta Curre Maxiimum wer Di ss on Po Pow Diss ssiipati tio ate Curr ent Rating Fig.5 surge On-St n-Sta Curre epetiti ve) (Non-R (Non-Re tiv ate Volt age Fig.2 On-St n-Sta lta ate Curr ent vs.Allo wable Fig Fig..4 On St Sta Curre .Allow e Tem perature Cas ase emp er Volt age vs. Fig.6 Gate Trigg igge lta ction Tem perature Jun unc emp 3/6 Steady, keep you advance 8A 60 WTF TF8A 8A6 er Curr ent vs. Fig.7 Gate Trigg igge Curre erma Fig.8 Transient Th The mall Impedance ction Tem perature Jun unc emp ger Ch aracteri sti cs Test Cir cuit Fig.9 Gate Trig igg Cha ris tic Circ 4/6 Steady, keep you advance 8A 60 WTF TF8A 8A6 Marking layout - : Winsemi Semiconductor Logo WW : Weekly code(01-52) YY : Last two digit of calendar year (10:2010;11:2011) □ : HF Null Halogen free Halogen 5/6 Steady, keep you advance WTF 8A 60 TF8A 8A6 0F Pa ckage Dim ension TO-22 220 Pac Dime Unit:mm 6/6 Steady, keep you advance