STF6A60

6A60
STF
TF6
al Triod
e Th
yri
stor
B i-Di
Dirrection
onal
riode
Thy
ris
Features
■
Repetitive Peak off -State Voltage:600V
■
R.M.S On-State Current(IT(RMS)=6A)
■
High Comm utation dv/dt
■
Isolation Voltage(VISO=1500V AC)
General Description
This device is fully isolated package suitable for AC switching
application , phase control application such as fan speed and
temperature modulation control, li ghting control and static
switching relay.This device is approved to comply with
applicable requirements by underwriters laboratories lnc.
By using an internal ceramic pad , the TO220F series provides
voltage insulated tab (rated at 2500V RMS) complying with UL
standards (file ref.:E347423)
Absolute Maximum Ratings
symbol
(T J=25℃ unless otherwise specified)
Parameter
condition
Ratings
Units
600
V
6
A
60/66
A
I 2t
18
A2s
Peak Gate Power Dissipation
3
W
0.3
W
VDRM
Repetitive Peak Off-State Voltage
IT (RMS)
R.M.S On-State Current
ITSM
Surge On-State Current
T C = 94 °C
One Cycle, 50Hz/60Hz,
Peak,Non-Repetitive
I 2t
P GM
P G(AV)
Average Gate Power dissipation
I GM
Peak Gate Current
2
A
VGM
Peak Gate Voltage
10
V
VISO
Isolation Breakdown Voltage(R.M.S.)
1500
V
Operating Junction Temperatur e
-40~125
℃
Storage Temperature
-40~150
℃
2.0
g
TJ
TSTG
A.C .1minute
mass
Thermal Characteristics
Symbol
R ӨJC
Parameter
Thermal Resistance Junction to case(Max)
Rev.A Oct.2011
Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved.
Value
Units
3.8
℃/W
STF
6A60
TF6
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Symbol
It e ms
conditions
Repetitive Peak Off-State
I DRM
VTM
Ratings
Unit
Min
Typ
Max
-
-
1.0
mA
-
-
1.5
V
-
-
20
-
-
20
VD=VDRM,Single Phase, Half
Wave T J=125℃
Current
Peak On-State Voltage
IT=8A,Inst.Measurement
I +GT1
Ⅰ
I -GT1
Ⅱ
I -GT3
Ⅲ
-
-
20
V+GT1
Ⅰ
-
-
1.5
V-GT 1
Ⅱ
-
-
1.5
-
-
1.5
0.2
-
-
V
5.0
-
-
V/µs
-
10
-
mA
-
V GT 3
VG D
(dv/dt)c
IH
Gate Trigger Current
Gate Trigger Voltage
VD=6V,RL=10Ω
VD=6V,RL=10Ω
Ⅲ
Non-Trigger Gate Voltage
T J=125℃,VD=1/2VDRM
Critical Rate of Rise Off-State
T J=125℃,[di/dt]c=-3.0 A/ms,
Voltage at Comm utation
V D=2/3 VDRM
Holding Current
mA
V
2/5
Steady, keep you advance
STF
6A60
TF6
aracteri
sti
cs
Fig 1.G ate Ch
Cha
ris
tic
ate Curr
ent vs.Max
Fig.3 On St
Sta
Curre
Maxiimum
w er Di
ss
on
Po
Pow
Diss
ssiipati
tio
ate Curr
ent R ating
Fig.5 surge O n-St
n-Sta
Curre
ep eti ti
(Non-R
(Non-Re
tivve)
ate Vo lt
age
Fig.2 On-St
n-Sta
lta
ate Curr
ent vs.Allo
wable
Fig .4 On St
Sta
Curre
.Allow
e Tem
perature
C as
ase
emp
Fig.6 Gate Trigg
er Volt
age v s.
gge
lta
ction Tem
peratu re
Jun
unc
emp
3/5
Steady, keep you advance
STF
6A60
TF6
ent vs.
Fig.7 Gate Trigg er Curr
Curre
erma
Fig.8 Transient Th
The
mall I mp ed an ce
ction Tem
perature
Jun
unc
emp
ger Ch
aracteri
sti
cs Test Cir
cuit
Fig.9 Gate Trig
igg
Cha
ris
tic
Circ
4/5
Steady, keep you advance
STF
6A60
TF6
0F Pa
ckage Dim
ension
TO -22
220
Pac
Dime
U n it:m m
E
Q
F
L2
D
P
符 号
Sy mbol
M IN
M AX
A
4 .5
4 .9
B
-
1 .4 7
b
0 .7
0 .9
c
0 .4 5
0 .6
D
1 5 .6 7
1 6 .0 7
E
9 .9 6
1 0 .3 6
e
L
B
b
C
2.54T YPE
F
2 .3 4
2 .7 4
L
1 2 .5 8
1 3 .3 8
L2
3 .1 3
3 .3 3
ФP
3 .0 8
3 .2 8
Q
3 .2
3 .4
Q1
2 .5 6
2 .9 6
Q1
e
A
e
5/5
Steady, keep you advance