6A60 STF TF6 al Triod e Th yri stor B i-Di Dirrection onal riode Thy ris Features ■ Repetitive Peak off -State Voltage:600V ■ R.M.S On-State Current(IT(RMS)=6A) ■ High Comm utation dv/dt ■ Isolation Voltage(VISO=1500V AC) General Description This device is fully isolated package suitable for AC switching application , phase control application such as fan speed and temperature modulation control, li ghting control and static switching relay.This device is approved to comply with applicable requirements by underwriters laboratories lnc. By using an internal ceramic pad , the TO220F series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (file ref.:E347423) Absolute Maximum Ratings symbol (T J=25℃ unless otherwise specified) Parameter condition Ratings Units 600 V 6 A 60/66 A I 2t 18 A2s Peak Gate Power Dissipation 3 W 0.3 W VDRM Repetitive Peak Off-State Voltage IT (RMS) R.M.S On-State Current ITSM Surge On-State Current T C = 94 °C One Cycle, 50Hz/60Hz, Peak,Non-Repetitive I 2t P GM P G(AV) Average Gate Power dissipation I GM Peak Gate Current 2 A VGM Peak Gate Voltage 10 V VISO Isolation Breakdown Voltage(R.M.S.) 1500 V Operating Junction Temperatur e -40~125 ℃ Storage Temperature -40~150 ℃ 2.0 g TJ TSTG A.C .1minute mass Thermal Characteristics Symbol R ӨJC Parameter Thermal Resistance Junction to case(Max) Rev.A Oct.2011 Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved. Value Units 3.8 ℃/W STF 6A60 TF6 Electrical Characteristics(Tc=25℃ unless otherwise noted) Symbol It e ms conditions Repetitive Peak Off-State I DRM VTM Ratings Unit Min Typ Max - - 1.0 mA - - 1.5 V - - 20 - - 20 VD=VDRM,Single Phase, Half Wave T J=125℃ Current Peak On-State Voltage IT=8A,Inst.Measurement I +GT1 Ⅰ I -GT1 Ⅱ I -GT3 Ⅲ - - 20 V+GT1 Ⅰ - - 1.5 V-GT 1 Ⅱ - - 1.5 - - 1.5 0.2 - - V 5.0 - - V/µs - 10 - mA - V GT 3 VG D (dv/dt)c IH Gate Trigger Current Gate Trigger Voltage VD=6V,RL=10Ω VD=6V,RL=10Ω Ⅲ Non-Trigger Gate Voltage T J=125℃,VD=1/2VDRM Critical Rate of Rise Off-State T J=125℃,[di/dt]c=-3.0 A/ms, Voltage at Comm utation V D=2/3 VDRM Holding Current mA V 2/5 Steady, keep you advance STF 6A60 TF6 aracteri sti cs Fig 1.G ate Ch Cha ris tic ate Curr ent vs.Max Fig.3 On St Sta Curre Maxiimum w er Di ss on Po Pow Diss ssiipati tio ate Curr ent R ating Fig.5 surge O n-St n-Sta Curre ep eti ti (Non-R (Non-Re tivve) ate Vo lt age Fig.2 On-St n-Sta lta ate Curr ent vs.Allo wable Fig .4 On St Sta Curre .Allow e Tem perature C as ase emp Fig.6 Gate Trigg er Volt age v s. gge lta ction Tem peratu re Jun unc emp 3/5 Steady, keep you advance STF 6A60 TF6 ent vs. Fig.7 Gate Trigg er Curr Curre erma Fig.8 Transient Th The mall I mp ed an ce ction Tem perature Jun unc emp ger Ch aracteri sti cs Test Cir cuit Fig.9 Gate Trig igg Cha ris tic Circ 4/5 Steady, keep you advance STF 6A60 TF6 0F Pa ckage Dim ension TO -22 220 Pac Dime U n it:m m E Q F L2 D P 符 号 Sy mbol M IN M AX A 4 .5 4 .9 B - 1 .4 7 b 0 .7 0 .9 c 0 .4 5 0 .6 D 1 5 .6 7 1 6 .0 7 E 9 .9 6 1 0 .3 6 e L B b C 2.54T YPE F 2 .3 4 2 .7 4 L 1 2 .5 8 1 3 .3 8 L2 3 .1 3 3 .3 3 ФP 3 .0 8 3 .2 8 Q 3 .2 3 .4 Q1 2 .5 6 2 .9 6 Q1 e A e 5/5 Steady, keep you advance