STD4A60S SemiWell Semiconductor Sensitive Gate Triacs Symbol ○ Features 2.T2 ▼▲ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ High Commutation dv/dt ◆ Sensitive Gate Triggering 4 Mode ◆ ○ ◆ 1.T1 3.Gate ○ D-PAK(TO-252) General Description 2 This device is sensitive gate triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. 1 3 Absolute Maximum Ratings Symbol ( TJ = 25°C unless otherwise specified ) Parameter Condition Ratings Units 600 V 4.0 A 30/33 A I2 t 4.5 A2 s Peak Gate Power Dissipation 1.5 W Average Gate Power Dissipation 0.1 W IGM Peak Gate Current 1.0 A VGM Peak Gate Voltage 7.0 V Operating Junction Temperature - 40 ~ 125 °C Storage Temperature - 40 ~ 150 °C VDRM Repetitive Peak Off-State Voltage IT(RMS) R.M.S On-State Current TC = 109 °C ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive I2 t PGM PG(AV) TJ TSTG Jul, 2003. Rev. 3 1/5 copyright@SemiWell Semiconductor Co., LTd., All rights reserved. STD4A60S Electrical Characteristics Symbol Items Ratings Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C ─ ─ 1.0 mA VTM Peak On-State Voltage IT = 6 A, Inst. Measurement ─ ─ 1.6 V ─ ─ 5 ─ ─ 5 I+GT1 Ⅰ I -GT1 Ⅱ Gate Trigger Current VD = 6 V, RL=10 Ω mA I -GT3 Ⅲ ─ ─ 5 I+GT3 Ⅳ ─ 8 12 V+GT1 Ⅰ ─ ─ 1.4 V-GT1 Ⅱ ─ ─ 1.4 Gate Trigger Voltage VD = 6 V, RL=10 Ω V V-GT3 Ⅲ ─ ─ 1.4 V+GT3 Ⅳ ─ 1.6 2.0 0.2 ─ ─ V 5 ─ ─ V/㎲ ─ ─ 10 mA ─ ─ 2.6 °C/W VGD (dv/dt)c IH Rth(j-c) 2/5 Conditions Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 °C, [di/dt]c = -2.0 A/ms, VD=2/3 VDRM Holding Current Thermal Impedance Junction to case STD4A60S Fig 1. Gate Characteristics Fig 2. On-State Voltage 2 10 1 10 VGM (7V) On-State Current [A] PG(AV) (0.1W) 0 25 ℃ I+GT3 25 ℃ I+GT1 I -GT1 I -GT3 10 IGM (1A) Gate Voltage [V] PGM (1.5W) 1 10 o 125 C 0 10 o 25 C VGD(0.2V) -1 10 -1 10 0 1 10 10 2 3 10 0.5 Power Dissipation [W] 4.5 2π θ 4.0 360° 3.5 θ 3.0 : Conduction Angle 2.5 Allowable Case Temperature [ oC] θ θ θ θ 5.5 θ 2.0 2.5 3.0 3.5 4.0 4.5 Fig 4. On State Current vs. Allowable Case Temperature 6.0 π 1.5 On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation 5.0 1.0 10 Gate Current [mA] o = 180 o = 150 o = 120 o = 90 θ = 60 o θ = 30 o 2.0 1.5 1.0 130 125 120 115 o θ π 110 θ = 30o θ = 60 o θ = 90 o θ = 120 o θ = 150 o θ = 180 2π θ 105 360° θ 100 : Conduction Angle 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 95 0.0 5.0 0.5 1.0 1.5 RMS On-State Current [A] 2.0 2.5 3.0 3.5 4.0 4.5 5.0 RMS On-State Current [A] Fig 6. Gate Trigger Voltage vs. Junction Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 3 35 10 50Hz o 15 10 - V GT3 2 10 V 5 0 0 10 + GT1 - V GT1 o 20 V VGT (25 C) X 100 (%) 60Hz 25 VGT (t C) Surge On-State Current [A] 30 + GT3 1 10 1 10 Time (cycles) 2 10 -50 0 50 100 150 o Junction Temperature [ C] 3/5 STD4A60S Fig 7. Gate Trigger Current vs. Junction Temperature Fig 8. Transient Thermal Impedance 3 10 o I + I - I GT1 GT1 GT3 o IGT (t C) 2 10 IGT (25 C) X 100 (%) o Transient Thermal Impedance [ C/W] 10 I + GT3 1 1 10 -50 0 50 100 150 -2 -1 10 0 10 o 1 10 2 10 10 Time (sec) Junction Temperature [ C] Fig 9. Gate Trigger Characteristics Test Circuit 10Ω 10Ω ▼▲ 6V ▼▲ ● A V 4/5 10Ω ▼▲ ● 6V RG 10Ω A V ● 6V RG ▼▲ A V RG 6V ● A V ● ● ● ● Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ Test Procedure Ⅳ RG STD4A60S TO-252(D-PAK) Package Dimension mm Dim. Min. Typ. A 6.48 6.604 B 5.0 5.08 C 7.42 7.8 D 2.184 E F Inch Max. Min. Typ. 6.73 0.255 0.26 0.265 5.21 0.197 0.2 0.205 8.18 0.292 0.307 0.322 2.286 2.388 0.086 0.09 0.094 0.762 0.813 0.864 0.03 0.032 0.034 1.016 1.067 1.118 0.04 0.042 0.044 G 2.286 0.09 H 2.286 0.09 Max. I 0.534 0.61 0.686 0.021 0.024 0.027 J 1.016 1.067 1.118 0.04 0.042 0.044 K 0.508 0.02 L 0.762 0.03 φ 1.57 0.06 A D E B φ F C I 2 1 G 3 K H L 1. T1 2. T2 3. Gate J 5/5