SPN4850 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4850 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS z DC/DC Converter z Load Switch FEATURES 60V/7.2A,RDS(ON)= 27mΩ@VGS= 10V 60V/6.8A,RDS(ON)= 32mΩ@VGS= 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design PIN CONFIGURATION(SOP – 8P) PART MARKING 2009 / 04 / 05 Ver.2 Page 1 SPN4850 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 S Source 2 S Source 3 S Source 4 G 5 D Gate Drain 6 D Drain 7 D Drain 8 D Drain ORDERING INFORMATION Part Number Package Part Marking SPN4850S8RG SOP- 8P SPN4850 SPN4850S8RGB SOP- 8P SPN4850 ※ SPN4850S8RG : 13” Tape Reel ; Pb – Free ※ SPN4850S8RGB : 13” Tape Reel ; Pb – Free ; Halogen -Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 60 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ ID 7.2 6.8 A Pulsed Drain Current IDM 40 A Avalanche Current IAS 15 A Power Dissipation Operating Junction Temperature TA=25℃ TA=70℃ PD 2.5 1.6 W TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 ℃/W 2009 / 04 / 05 Ver.2 Page 2 SPN4850 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS≥5V,VGS =10V Forward Transconductance gfs Diode Forward Voltage VSD IS=1.7A,VGS =0V RDS(on) 1.0 3.0 VDS=0V,VGS=±20V VDS=48V,VGS=0V VDS=48V,VGS=0V TJ=85℃ VGS= 10V,ID=7.2A VGS=4.5V,ID=6.8A VDS=15V,ID=6.2A Drain-Source On-Resistance 60 ±100 1 5 25 V nA uA A 0.023 0.027 25 0.027 0.032 0.8 1.2 25 30 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 115 td(on) 10 20 10 20 25 50 12 25 Turn-On Time Turn-Off Time 2009 / 04 / 05 Ver.2 tr td(off) tf VDS=30V,VGS=10V ID= 6A nC 4.2 5.3 VDS=30VGS=0V f=1MHz VDD=30V,RL=30Ω ID≡1.0A,VGEN=10V RG=6Ω 950 1400 pF 180 nS Page 3 SPN4850 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009 / 04 / 05 Ver.2 Page 4 SPN4850 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009 / 04 / 05 Ver.2 Page 5 SPN4850 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009 / 04 / 05 Ver.2 Page 6 SPN4850 N-Channel Enhancement Mode MOSFET SOP- 8 PACKAGE OUTLINE 2009 / 04 / 05 Ver.2 Page 7 SPN4850 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2009 / 04 / 05 Ver.2 Page 8