SPN1032 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1032 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Drivers : Relays/Solenoids/Lamps/Hammers Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers FEATURES N-Channel 30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V 30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V 30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-523 (SC-89-3L) package design PIN CONFIGURATION( SOT-523 / SC-89-3L ) PART MARKING 2015/06/18 Ver.1 Page 1 SPN1032 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Part Number Package Part Marking SPN1032S52RG SOT-523 B2 SPN1032S52RGB SOT-523 B2 ORDERING INFORMATION ※ SPN1032S52RG : Tape Reel ; Pb – Free ※ SPN1032S52RGB : Tape Reel ; Pb – Free, Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate –Source Voltage VGSS ±12 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=80℃ ID Pulsed Drain Current () IDM Thermal Resistance-Junction to Ambient Power Dissipation TA=25℃ Operating Junction Temperature Storage Temperature Range 0.65 0.45 A A RθJA 0.95 375 ℃/W PD 1.35 W TJ TSTG -55/150 ℃ -55/150 ℃ () Pulse width limited by safe operating area 2015/06/18 Ver.1 Page 2 SPN1032 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. V(BR)DSS VGS=0V,ID= 250uA 30 0 0.35 Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V VDS= 48V,VGS=0V IDSS TJ=25℃ VDS= 48V,VGS=0V TJ=55℃ ID(on) VDS≥ 4.5V,VGS =5V VGS=4.5V,ID=0.95A RDS(on) VGS=2.5V,ID=0.75A VGS=1.8V,ID=0.65A gfs VDS=10V,ID=0.4A VSD IS=0.15A,VGS=0V 1.0 ±30 30 V uA uA 100 0.7 A 0.45 0.50 0.70 1.0 0.55 0.65 0.85 0.8 1.2 1.2 1.5 Ω S V Dynamic Total Gate Charge Qg VDS=10V,VGS=4.5V, ID≡0.6A Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.3 Input Capacitance Ciss 7.2 Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time td(on) tr Turn-Off Time 2015/06/18 Ver.1 td(off) tf VDS = 10V, f = 1 MHz, VGS = 0V VDD=10V,RL=10Ω , ID≡0.5A VGEN=4.5V ,RG=6Ω 0.2 nC 17 pF 1.6 5 10 8 15 10 18 1.2 2.8 ns Page 3 SPN1032 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2015/06/18 Ver.1 Page 4 SPN1032 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2015/06/18 Ver.1 Page 5 SPN1032 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2015/06/18 Ver.1 Page 6 SPN1032 N-Channel Enhancement Mode MOSFET SOT-523 PACKAGE OUTLINE 2015/06/18 Ver.1 Page 7 SPN1032 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2015 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2015/06/18 Ver.1 Page 8