SPN1032 - Sync Power Corp.

SPN1032
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN1032 is the N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
 Drivers : Relays/Solenoids/Lamps/Hammers
 Power Supply Converter Circuits
 Load/Power Switching Cell Phones, Pagers
FEATURES

N-Channel
30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V
30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V
30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V

Super high density cell design for extremely low
RDS (ON)

Exceptional on-resistance and maximum DC
current capability

SOT-523 (SC-89-3L) package design
PIN CONFIGURATION( SOT-523 / SC-89-3L )
PART MARKING
2015/06/18 Ver.1
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SPN1032
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
G
Gate
2
S
Source
3
D
Drain
Part Number
Package
Part Marking
SPN1032S52RG
SOT-523
B2
SPN1032S52RGB
SOT-523
B2
ORDERING INFORMATION
※ SPN1032S52RG : Tape Reel ; Pb – Free
※ SPN1032S52RGB : Tape Reel ; Pb – Free, Halogen – Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
30
V
Gate –Source Voltage
VGSS
±12
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=80℃
ID
Pulsed Drain Current ()
IDM
Thermal Resistance-Junction to Ambient
Power Dissipation
TA=25℃
Operating Junction Temperature
Storage Temperature Range
0.65
0.45
A
A
RθJA
0.95
375
℃/W
PD
1.35
W
TJ
TSTG
-55/150
℃
-55/150
℃
() Pulse width limited by safe operating area
2015/06/18 Ver.1
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SPN1032
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
V(BR)DSS VGS=0V,ID= 250uA
30
0
0.35
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS= 48V,VGS=0V
IDSS TJ=25℃
VDS= 48V,VGS=0V
TJ=55℃
ID(on) VDS≥ 4.5V,VGS =5V
VGS=4.5V,ID=0.95A
RDS(on) VGS=2.5V,ID=0.75A
VGS=1.8V,ID=0.65A
gfs
VDS=10V,ID=0.4A
VSD
IS=0.15A,VGS=0V
1.0
±30
30
V
uA
uA
100
0.7
A
0.45
0.50
0.70
1.0
0.55
0.65
0.85
0.8
1.2
1.2
1.5
Ω
S
V
Dynamic
Total Gate Charge
Qg
VDS=10V,VGS=4.5V,
ID≡0.6A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
0.3
Input Capacitance
Ciss
7.2
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Time
td(on)
tr
Turn-Off Time
2015/06/18 Ver.1
td(off)
tf
VDS = 10V, f = 1 MHz,
VGS = 0V
VDD=10V,RL=10Ω ,
ID≡0.5A
VGEN=4.5V ,RG=6Ω
0.2
nC
17
pF
1.6
5
10
8
15
10
18
1.2
2.8
ns
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SPN1032
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2015/06/18 Ver.1
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SPN1032
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2015/06/18 Ver.1
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SPN1032
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2015/06/18 Ver.1
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SPN1032
N-Channel Enhancement Mode MOSFET
SOT-523 PACKAGE OUTLINE
2015/06/18 Ver.1
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SPN1032
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the
penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.
No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
devices or systems without express written approval of SYNC Power Corporation.
© The SYNC Power logo is a registered trademark of SYNC Power Corporation
© 2015 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved
SYNC Power Corporation
7F-2, No.3-1, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
© http://www.syncpower.com
2015/06/18 Ver.1
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