SPN8205W - Sync Power Corp.

SPN8205W
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
DESCRIPTION
The SPN8205W is the Common-Drain Dual N-Channel
logic enhancement mode power field effect transistors are
produced using high cell density , DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These devices
are particularly suited for low voltage application ,
notebook computer power management and other battery
powered circuits where high-side switching .
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹
20V/5.0A,RDS(ON)= 24mΩ@VGS= 4.5V
‹
20V/3.0A,RDS(ON)= 34mΩ@VGS= 2.5V
‹
Super high density cell design for extremely low
RDS (ON)
‹
Exceptional on-resistance and maximum DC
current capability
‹
TSSOP – 8P package design
PIN CONFIGURATION(TSSOP – 8P)
PART MARKING
2010/03/12 Ver.1
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SPN8205W
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
D1 / D2
Drain
2
S1
Source
3
S1
Source
4
G1
5
G2
Gate
Gate
6
S2
Source
7
S2
Source
8
D1 / D2
Drain
ORDERING INFORMATION
Part Number
Package
SPN8205WTS8RGB
TSSOP- 8P
Part
Marking
8205W
※ SPN8205WTS8RG : 13” Tape Reel ; Pb – Free ; Halogen - Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
20
V
Gate –Source Voltage
VGSS
±8
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
ID
5.0
4.0
A
IDM
20
A
IS
2.3
A
PD
1.5
0.9
W
TJ
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
80
℃/W
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SPN8205W
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
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SPN8205W
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN8205W
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2010/03/12 Ver.1
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SPN8205W
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
TSSOP- 8P PACKAGE OUTLINE
2010/03/12 Ver.1
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SPN8205W
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the
penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.
No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
devices or systems without express written approval of SYNC Power Corporation.
©The SYNC Power logo is a registered trademark of SYNC Power Corporation
©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved
SYNC Power Corporation
9F-5, No.3-2, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
©http://www.syncpower.com
2010/03/12 Ver.1
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