SPN8206 Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8206 is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES 20V/5.0A,RDS(ON)= 8.2mΩ@VGS= 4.5V 20V/3.0A,RDS(ON)= 11.0mΩ@VGS= 2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD capability 2KV TDFN -6P package design PIN CONFIGURATION(TDFN– 6P) PART MARKING 2013/10/21 Ver.1 Page 1 SPN8206 Common-Drain Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 S1 Source 2 S1 Source 3 G1 Gate 4 G2 5 S2 Gate Source 6 S2 Source Exposed Backside Metal D1/D2 Drain ORDERING INFORMATION Part Number Package SPN8206TDN6RGB TDFN- 6P Part Marking 8206 ※ SPN8206TDN6RGB : 7” Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate –Source Voltage VGSS ±12 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operating Junction Temperature ID IDM TA=25℃ TA=70℃ PD 11 8.0 70 1.5 1.0 A A W TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 ℃/W 2013/10/21 Ver.1 Page 2 SPN8206 Common-Drain Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS Drain-Source On-Resistance Diode Forward Voltage RDS(on) VSD 20 0.5 1.5 VDS=0V,VGS=±12V VDS=16V,VGS=0.0V VDS=16V,VGS=0.0V TJ=55℃ VGS = 4.5V,ID=5.5A VGS = 4.0V,ID=5.5A VGS = 3.7V,ID=5.5A VGS = 3.1V,ID=5.5A VGS = 2.5V,ID=5.5A IS=1A,VGS=0V ±10 1 10 8.2 8.5 9.0 9.4 11.0 1.2 V uA uA mΩ V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2013/10/21 Ver.1 VDS=16V, VGS=4.5V ID=11A VDS=10V, VGS=0V f=1MHz td(off) tf 3 nC 7 1310 264 pF 235 31 td(on) tr 15 VDS=16V, ID=5.5A, VGS=4.5V, RG=6.0Ω 87 69 37 Page 3 ns SPN8206 Common-Drain Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2013/10/21 Ver.1 Page 4 SPN8206 Common-Drain Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2013/10/21 Ver.1 Page 5 SPN8206 Common-Drain Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2013/10/21 Ver.1 Page 6 SPN8206 Common-Drain Dual N-Channel Enhancement Mode MOSFET TDFN- 6P PACKAGE OUTLINE 2013/10/21 Ver.1 Page 7 SPN8206 Common-Drain Dual N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2013 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2013/10/21 Ver.1 Page 8