Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) External dimensions (Units: mm) Structure Epitaxial planar type NPN silicon transistor (96-232-C107) 232 Transistors 2SD2114K / 2SD2144S FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE FElectrical characteristic curves hFE values are classified as follows : 233 Transistors 234 2SD2114K / 2SD2144S Transistors 2SD2114K / 2SD2144S Ron measurement circuit 235