ROHM 2SD2144STPU

High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2114K
Features
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
Dimensions (Unit : mm)
2SD2114K
2.9±0.2
1.1+0.2
−0.1
1.9±0.2
0.8±0.1
0.95 0.95
(2)
0∼0.1
2.8±0.2
1.6+0.2
−0.1
(1)
+0.1
0.15 −0.06
0.4 +0.1
−0.05
All terminals have same dimensions
ROHM : SMT3
EIAJ : SC-59
Structure
Epitaxial planar type
NPN silicon transistor
∗ Denotes h
∗
Abbreviated symbol: BB
0.3∼0.6
(3)
(1) Emitter
(2) Base
(3) Collector
FE
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
25
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
12
V
0.5
A(DC)
1
A(Pulse)
Collector current
IC
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗
∗ Single pulse Pw=100ms
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Collector-base breakdown voltage
BVCBO
25
−
−
V
IC=10μA
Collector-emitter breakdown voltage
BVCEO
20
−
−
V
IC=1mA
Emitter-base breakdown voltage
BVEBO
12
−
−
V
IE=10μA
Collector cutoff current
ICBO
−
−
0.5
μA
VCB=20V
Emitter cutoff current
IEBO
−
−
0.5
μA
VEB=10V
VCE(sat)
−
0.18
0.4
V
IC/IB=500mA/20mA
hFE
820
−
2700
−
VCE=3V, IC=10mA
Parameter
Collector-emitter saturation voltage
DC current transfer ratio
Unit
Conditions
fT∗
−
350
−
MHz
Output capacitance
Cob
−
8.0
−
pF
VCB=10V, IE=0A, f=1MHz
Output On-resistance
Ron
−
0.8
−
Ω
IB=1mA, Vi=100mV(rms), f=1kHz
Transition frequency
VCE=10V, IE= −50mA, f=100MHz
∗ Measured using pulse current
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1/3
2012.01 - Rev.C
2SD2114K
Data Sheet
Packaging specifications and hFE
Package
Type
hFE
2SD2114K
VW
Taping
Code
T146
Basic ordering
unit (pieces)
3000
hFE values are classified as follows :
Item
V
hFE
W
820 to 1800 1200 to 2700
Electrical characteristic curves
2.0μA
1.6
1.4μA
1.8μA
1.2μA
1.2
1.0μA
0.8μA
0.8
0.6μA
0.4μA
0.4
0.2μA
0.1
0.2
0.3
0.4
1.2mA
1.0mA
0.8mA
600
0.6mA
400
0.4mA
0.2mA
200
0
0
0.5
Ta=25°C
Measured using
IB=0mA pulse current.
4
6
8
10
2
VCE=3V
Measured using
pulse current.
500
Ta=100°C
25°C
−25°C
200
100
50
20
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter output
characteristics ( )
Fig.2 Grounded emitter output
characteristics ( )
Fig.3 Grounded emitter propagation
characteristics
Ta=25°C
Measured using
pulse current.
VCE=5V
5000
2000
1000
500
3V
1V
200
100
50
10000
VCE=3V
Measured using
pulse current.
5000
2000
1000
Ta=100°C
25°C
−25°C
500
200
100
50
20
20
1
2
5
10 20
10
50 100 200 500 1000
1
2
500
200
100
Ta=100°C
25°C
−25°C
50
20
10
5
2
1
2
5
10 20
50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( )
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c 2012 ROHM Co., Ltd. All rights reserved.
○
BASE SATURATION VOLTAGE : VBE(sat) (mV)
IC/IB=25
Measured using
pulse current.
50 100 200
500 1000
10000
Ta=25°C
Pulsed
5000
IC/IB=10
25
50
100
2000
1000
500
200
100
50
20
10
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
Fig.8 Base-emitter saturation
voltage vs. collector current ( )
2/3
Ta=25°C
Measured using
pulse current.
1000
500
200
100
50
IC/IB=100
50
25
20
10
10
5
2
1
2
5
10 20
50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current ( )
Fig.4 DC current gain vs. collector
current ( )
1000
10 20
2000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
2000
5
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
BASE SATURATION VOLTAGE : VBE(sat) (mV)
10
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
10000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
1000
1.8mA 2.0mA
1.6mA
1.4mA
800
IB=0
0
0
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (mA)
1.6μA
COLLECTOR CURRENT : IC (mA)
1000
Ta=25°C
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (mA)
2.0
10000
lC/lB=10
Measured using
pulse current.
5000
Ta=−25°C
25°C
100°C
2000
1000
500
200
100
50
20
10
1
2
5 10
20
50 100 200
5001000
COLLECTOR CURRENT : IC (mA)
Fig.9 Base-emitter saturation voltage
vs. collector current ( )
2012.01 - Rev.C
2SD2114K
Ta=25°C
VCE=10V
Measured using
pulse current.
5000
2000
1000
500
200
100
50
20
10
−1 −2
−5 −10 −20 −50 −100 −200 −500 −1000
EMITTER CURRENT : IE (mA)
1000
Ta=25°C
f=1MHz
IE=0A
500
200
100
50
20
10
5
2
Ta=25°C
f=1kHz
Vi=100mV(rms)
RL=1kΩ
50
20
10
5
2
1
0.5
0.2
1
0.1 0.2
0.5 1
2
5
10 20
50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.10 Gain bandwidth product vs.
emitter current
100
ON RESISTANCE : Ron (Ω)
TRANSITION FREQUENCY : fT (MHz)
10000
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Data Sheet
Fig.11 Collector output capacitance
vs. collector-base voltage
0.1
0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10
BASE CURRENT : IB (mA)
Fig.12 Output-on resistance vs.
base current
Ron measurement circuit
RL=1kΩ
Input
vi
1kHz
100mV(rms)
IB
V Output
v0
Ron=
v0
vi−v0
×RL
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3/3
2012.01 - Rev.C
Notice
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R1120A