Transistors IC SMD Type Product specification 2SD2114K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High emitter-base voltage. 1 0.55 High DC current gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 Low VCE (sat). +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 12 V Collector current 0.5 IC A 1 * Collector power dissipation PC 0.2 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 W * Single pulse Pw=100ms. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=10ìA 25 Collector-emitter breakdown voltage BVCEO IC=1mA 20 V Emitter-base breakdown voltage BVEBO IE=10ìA 12 V ICBO VCB=20V IEBO VEB=10V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage VCE(sat) IC/IB=500mA/20mA DC current transfer ratio hFE VCE=3V, IC=10mA V 0.18 820 0.5 ìA 0.5 ìA 0.4 V 2700 Output capacitance * fT VCE=10V, IE= -50mA, f=100MHz 350 MHz Transition frequency Cob VCB=10V, IE=0, f=1MHz 8.0 pF Output On-resistance Ron IB=1mA, Vi=100mV(rms), f=1kHz 0.8 Ù * Measured using pulse current. hFE Classification BB Marking Rank V W hFE 820 1800 1200 2700 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1