2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 2SD2114K 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0∼0.1 2.8±0.2 1.6+0.2 −0.1 (1) +0.1 0.15 −0.06 0.4 +0.1 −0.05 0.3∼0.6 (3) All terminals have same dimensions ROHM : SMT3 EIAJ : SC-59 zStructure Epitaxial planar type NPN silicon transistor (1) Emitter (2) Base (3) Collector ∗ Abbreviated symbol: BB 2SD2144S 2±0.2 (15Min.) 3Min. 3±0.2 4±0.2 0.15 0.45+ −0.05 0.4 2.5 + −0.1 0.5 0.15 0.45 + −0.05 5 (1) (2) (3) ROHM : SPT EIAJ : SC-72 ∗ Denotes h (1) Emitter (2) Collector (3) Base FE zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 12 V Parameter Collector current Collector power 2SD2114K dissipation 2SD2144S IC PC 0.5 A(DC) 1 A(Pulse) 0.2 0.3 ∗ W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗ Single pulse Pw=100ms Rev.B 1/4 2SD2114K / 2SD2144S Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO 25 − − V IC=10µA Collector-emitter breakdown voltage BVCEO 20 − − V IC=1mA Emitter-base breakdown voltage BVEBO 12 − − V IE=10µA ICBO − − 0.5 µA VCB=20V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Unit Conditions IEBO − − 0.5 µA VEB=10V VCE(sat) − 0.18 0.4 V IC/IB=500mA/20mA hFE 820 − 2700 − VCE=3V, IC=10mA − 350 − MHz fT∗ Transition frequency VCE=10V, IE= −50mA, f=100MHz Output capacitance Cob − 8.0 − pF VCB=10V, IE=0A, f=1MHz Output On-resistance Ron − 0.8 − Ω IB=1mA, Vi=100mV(rms), f=1kHz ∗ Measured using pulse current zPackaging specifications and hFE Taping Package Type hFE 2SD2114K VW 2SD2144S VW Code T146 TP Basic ordering unit (pieces) 3000 5000 − − hFE values are classified as follows : Item V hFE W 820 to 1800 1200 to 2700 zElectrical characteristic curves 1.6µA 1.6 2.0µA 1.4µA 1.8µA 1.2µA 1.2 1.0µA 0.8µA 0.8 0.6µA 0.4µA 0.4 0.2µA 0 0 IB=0 0.1 0.2 0.3 0.4 0.5 800 1000 1.8mA 2.0mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 600 0.6mA 400 0.4mA 0.2mA 200 0 0 2 Ta=25°C Measured using IB=0mA pulse current. 4 6 8 10 COLLECTOR CURRENT : IC (mA) 1000 Ta=25°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 2.0 VCE=3V Measured using pulse current. 500 200 100 Ta=100°C 25°C −25°C 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output characteristics ( ) Fig.2 Grounded emitter output characteristics ( ) Fig.3 Grounded emitter propagation characteristics Rev.B 2/4 2SD2114K / 2SD2144S 1000 500 3V 1V 200 100 50 2000 1000 Ta=100°C 25°C −25°C 500 200 100 50 20 10 VCE=3V Measured using pulse current. 5000 20 1 2 5 10 20 10 50 100 200 500 1000 1 2 5 COLLECTOR CURRENT : IC (mA) 500 200 100 Ta=100°C 25°C −25°C 50 20 10 5 2 1 2 5 10 20 50 100 200 5001000 10000 5000 2000 Ta=25°C VCE=10V Measured using pulse current. 1000 500 200 100 50 20 10 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 EMITTER CURRENT : IE (mA) Fig.10 Gain bandwidth product vs. emitter current 500 200 100 50 IC/IB=100 50 25 20 10 10 5 2 1 1000 500 200 100 50 20 10 1 2 5 10 20 50 100 200 10 20 50 100 200 5001000 500 1000 lC/lB=10 Measured using pulse current. 5000 Ta=−25°C 25°C 100°C 2000 1000 500 200 100 50 20 10 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC (mA) Fig.9 Base-emitter saturation voltage vs. collector current ( ) Fig.8 Base-emitter saturation voltage vs. collector current ( ) Ta=25°C f=1MHz IE=0A 500 5 10000 COLLECTOR CURRENT : IC (mA) 1000 2 Fig.6 Collector-emitter saturation voltage vs. collector current ( ) IC/IB=10 25 50 100 2000 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) TRANSITION FREQUENCY : fT (MHz) 10000 Ta=25°C Measured using pulse current. 1000 COLLECTOR CURRENT : IC (mA) Ta=25°C Pulsed 5000 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 500 1000 Fig.5 DC current gain vs. collector current ( ) BASE SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) IC/IB=25 Measured using pulse current. 1000 50 100 200 2000 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) 2000 10 20 BASE SATURATION VOLTAGE : VBE(sat) (mV) DC CURRENT GAIN : hFE 2000 10000 200 100 50 20 10 5 2 100 Ta=25°C f=1kHz Vi=100mV(rms) RL=1kΩ 50 ON RESISTANCE : Ron (Ω) Ta=25°C Measured using pulse current. VCE=5V 5000 DC CURRENT GAIN : hFE 10000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Transistors 20 10 5 2 1 0.5 0.2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.11 Collector output capacitance vs. collector-base voltage 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 BASE CURRENT : IB (mA) Fig.12 Output-on resistance vs. base current Rev.B 3/4 2SD2114K / 2SD2144S Transistors zRon measurement circuit RL=1kΩ Input vi 1kHz 100mV(rms) IB V Output v0 Ron= v0 vi−v0 ×RL Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1