QS6K1 Transistors 2.5V Drive Nch+Nch MOS FET QS6K1 zExternal dimensions (Unit : mm) zStructure Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT6). (5) 0.85 0.7 (4) 1.6 2.8 (6) (2) 0~0.1 0.3~0.6 (1) (3) 1pin mark 0.16 0.4 Each lead has same dimensions zApplication Power switching, DC / DC converter. Abbreviated symbol : K01 zEquivalent circuit zPackaging specifications (6) Package ∗2 TR Code Type (5) (4) Basic ordering unit (pieces) (4) (1) (2) (3) 3000 ∗1 (1) zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr1 and Tr2> Parameter Drain-source voltage Gate-source voltage Source current (Body diode) (5) ∗2 QS6K1 Drain current (6) Taping Continuous Pulsed Continuous Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Tch Tstg ∗2 ∗1 (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Limits 30 12 ±1.0 ±4.0 0.8 4.0 1.25 0.9 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C (1) Tr1 Gate (2) Tr2 Source (3) Tr2 Gate (4) Tr2 Drain (5) Tr1 Source (6) Tr1 Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol Rth (ch-a) ∗ Limits 100 139 Unit °C / W / TOTAL °C / W / ELEMENT ∗ Mounted on a ceramic board Rev.B 1/3 QS6K1 Transistors zElectrical characteristics (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2> Symbol Min. Typ. Max. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Parameter − 30 − 0.5 − − − 1.0 − − − − − − − − − − − − − − 170 180 260 − 77 25 15 7 7 15 6 1.7 0.4 0.4 10 − 1 1.5 238 252 364 − − − − − − − − 2.4 − − Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Unit µA V µA V Conditions S pF pF pF ns ns ns ns nC nC nC VGS=12V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=1.0A, VGS=4.5V ID=1.0A, VGS=4.0V ID=1.0A, VGS=2.5V ID=1.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=500mA, VDD 15V VGS=4.5V RL=30.0Ω RG=10Ω VDD 15V VGS=4.5V ID=1.0A Unit V Conditions IS=3.2A, VGS=0V mΩ ∗Pulsed zBody diode characteristics (Source-Drain) (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. 1.2 ∗Pulsed Rev.B 2/3 QS6K1 Transistors zElectrical characteristic curves 1000 Ciss Coss Crss 1 0.01 0.1 1 10 td (off) 10 td (on) tr 1 0.01 100 0.1 DRAIN-SOURCE VOLTAGE : VDS (V) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) DRAIN CURRENT : ID (A) 1 VDS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0 0 10 2 ID=1A 400 ID=0.5A 300 200 100 0 2 4 6 8 10 12 VGS=0V Pulsed 14 1 100 0.01 0.01 0.0 16 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0.5 1.0 10 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.6 Source Current vs. Source-Drain Voltage 10000 VGS=4V Pulsed 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 3 Fig.3 Dynamic Input Characteristics 500 0 1 TOTAL GATE CHARGE : Qg (nC) 10 10000 VGS=4.5V Pulsed 0.1 1 GATE-SOURCE VOLTAGE : VGS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 0.01 2 Ta=25°C Pulsed 600 Fig.4 Typical Transfer Characteristics 1000 3 10 700 GATE-SOURCE VOLTAGE : VGS (V) 10000 4 Fig.2 Switching Characteristics Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 1 5 DRAIN CURRENT : ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 tf 100 Ta=25°C 7 VDD=15V ID=1A 6 RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS (V) 100 8 Ta=25°C VDD=15V VGS=4.5V RG=10Ω Pulsed SOURCE CURRENT : Is (A) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 1000 100 0.01 VGS=2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 1 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) Rev.B 10 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1