2SA2088 Transistors Medium power transistor (−60V, −0.5A) 2SA2088 zExternal dimensions (Unit : mm) UMT3 2.0 0.9 0.2 0.3 0.7 (1) 0.65 0.65 1.3 0.15 0.1Min. (2) 2.1 (3) 1.25 zFeatures 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100mA, IB = −10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5876 (1) Emitter Each lead has same dimensions (2) Base zApplications Small signal low frequency amplifier High speed switching (3) Collector Abbreviated symbol : VM zStructure PNP Silicon epitaxial planar transistor zPackaging specifications Package Type Taping Code T106 Basic ordering unit (pieces) 3000 2SA2088 zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −60 V Parameter VEBO −6 V DC IC −0.5 A Pulsed ICP −1.0 A PC 200 mW Tj 150 °C Tstg −55 to 150 °C Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature ∗1 ∗2 ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land Rev.A 1/3 2SA2088 Transistors zElectrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. −60 −60 −6 − − Typ. − − − − − Max. − − − −1.0 −1.0 Unit V V V µA µA Collector-emitter saturation voltage VCE (sat) − −150 −500 mV hFE 120 − 270 − fT − 400 − MHz Corrector output capacitance Cob − 10 − pF Turn-on time Storage time Fall time ton tstg tf − − − 35 100 60 − − − ns ns ns DC current gain Transition frequency Condition IC= −1mA IC= −100µA IE= −100µA VCB= −40V VEB= −4V IC= −100mA IB= −10mA VCE= −2V IC= −50mA VCE= −10V IE=100mA f=10MHz VCB= −10V IE=0A f=1MHz IC= −500mA IB1= −50mA IB2=50mA VCC −25V ∗1 ∗2 ∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement circuits zhFE RANK Q 120−270 zElectrical characteristic curves −1 100ms 10ms 1ms −0.1 DC −0.01 Single non repetitive Pulsed −0.001 −0.1 −1 −10 tstg 100 tf ton 10 −0.01 −100 −0.1 1000 100 VCE= −2V Ta=125°C Ta=25°C Ta= −40°C 10 −0.001 −1 −0.01 −0.1 −1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe Operating Area Fig.2 Switching Time Fig.3 DC Current Gain vs. Collector Current (Ι) −10 Ta=25°C 100 VCE= −5V VCE= −3V VCE= −2V 10 1 0.001 0.01 0.1 COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current (ΙΙ) 1 −1 −0.1 −0.01 −0.001 −10 IC / IB=10 / 1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1000 DC CURRENT GAIN : hFE SWITCHING TIME : (ns) 500µs Ta=25°C VCC= −25V IC / IB=10 / 1 DC CURRENT GAIN : hFE 1000 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (A) −10 Ta=125°C Ta=25°C Ta= −40°C −0.01 −0.1 −1 COLLECTOR CURRENT : IC (A) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) Ta=25°C −1 IC / IB=100/1 IC / IB=20/1 IC / IB=10/1 −0.1 −0.01 −0.001 −0.01 −0.1 −1 COLLECTOR CURRENT : IC (A) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) Rev.A 2/3 2SA2088 Transistors −1 Ta=125°C Ta=25°C Ta= −40°C −0.1 −0.001 −0.01 −0.1 −0.01 −0 −1 −0.5 −1 −1.5 1000 Ta=25°C VCE= −10V 100 10 0.001 BASE TO EMITTER VOLTAGE : VBE (V) Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=125°C Ta=25°C Ta= −40°C −0.1 COLLECTOR CURRENT : IC (A) 100 VCE= −2V TRANSITION FREQUENCY : fT (MHz) −1 IC / IB=10 / 1 COLLECTOR CURRENT : IC (A) BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) −10 0.01 0.1 1 EMITTER CURRENT : IE (A) Fig.8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency Ta=25°C f=1MHz 10 1 −0.1 −1 −10 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector Output Capacitance zSwitching characteristics measurement circuits RL=50Ω IC IB1 VIN PW VCC −25V IB2 PW 50µs DUTY CYCLE ≤ 1% IB2 IB1 BASE CURRENT WAVEFORM 90% COLLECTOR CURRENT WAVEFORM Ton Tstg Tf IC 10% Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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