2SA1952 Transistors High-speed Switching Transistor (−60V, −5A) 2SA1952 zFeatures 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC/IB = −3/−0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. zExternal dimensions (Unit : mm) 1.5 5.1 (2) 6.5 5.5 2.3 (1) 0.9 0.75 2SA1952 Collector current IC Collector power dissipation PC Junction temperature Storage temperature Tj Tstg Unit V V V A A(Pulse) W W(Tc=25°C) °C °C 0.8Min. 1.5 0.5 Limits −100 −60 −5 −5 −10 1 10 150 −55~+150 1.0 Symbol VCBO VCEO VEBO 0.5 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage C0.5 2.3 zAbsolute maximum ratings (Ta = 25°C) 0.65 2.3 (3) 0.9 2.5 9.5 ROHM : CPT3 EIAJ : SC-63 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) zPackaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SA1952 CPT3 Q TL 2500 zElectrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVCBO BVCEO BVEBO ICBO IEBO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) −100 −60 −5 − − − − − − 120 40 − − − − − − − − − − − − − − − − 80 130 − − − − − − −10 −10 −0.3 −0.5 −1.2 −1.5 270 − − − 0.3 1.5 0.3 V V V µA µA V V V V − − MHz pF µs µs µs DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time hFE1 hFE2 fT Cob ton tstg tf Conditions IC = −50µA IC = −1mA IE = −50µA VCB = −100V VEB = −5V IC/IB= −3A/ −0.15A IC/IB= −4A/ −0.2A IC/IB= −3A/ −0.15A IC/IB= −4A /−0.2A VCE = −2V , IC = −1A VCE = −2V , IC = −3A VCE = −10V , IE = 0.5A , f = 30MHz VCB = −10V , IE = 0A , f = 1MHz IC = −3A , RL = 10Ω IB1 = −IB2 = −0.15A VCC −30V Rev.A 1/2 2SA1952 Transistors zElectrical characteristics curves COLLECTOR CURRENT : IC (A) −50mA −40mA −3 −30mA −2 −20mA −1 −10mA −2 −0.5 −0.2 −0.1 −0.05 −0.02 −1 0 −2 −3 −4 −0.01 −5 −5 0 Ta= −25°C −2 25°C 100°C −1 VBE(sat) −0.5 −0.2 −0.1 −0.05 Ta=100°C VCE(sat) 25°C −0.02 −0.01 −0.01 −0.02 −25°C −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) 10 Ta=100°C 20 25°C −25°C 10 5 Fig.2 Ground emitter propagation characteristics Ta=25°C VCE= −10A 500 200 100 50 20 10 5 2 1 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) 1 EMITTER CURRENT : IE (A) Fig.4 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage 50 1 −0.01 −0.02 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 1000 IC/IB=20 Pulsed 100 BASE TO EMITTER VOLTAGE : VBE (V) TRANSITION FREQUENCY: fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) −10 200 2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics VCE= −2V Pulsed 500 −1 IB=0A 0 1000 VCE= −2V Pulsed Ta=100°C 25°C −25°C DC CURRENT GAIN : hEF 0mA −5 −60mA −10 COLLECTOR CURRENT : IC (A) −4 −10 Tc =25°C −70mA Fig.5 Resistance ratio vs. emitter current Fig.3 DC current gain vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) A A 0m m −9 −80 −5 10000 Ta=25°C f=1MHz IE=0A 5000 2000 1000 500 200 100 50 20 10 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.6 Collector output capacitance vs. collector-base voltage IE=20IB1= −20IB2 TURN ON TIME : ton(µs) STRAGE TIME : tstg(µs) FALL TIME : tf(µs) 5 2 1 tstg ton tf 0.5 0.2 0.1 0.05 0.02 0.01 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR CURRENT : IC (A) Fig.7 Switching characteristics Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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