Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2 Electrical characteristics................................................................... 3 Rating and characteristic curves........................................................ 3.4 Pinning information........................................................................... 5 Suggested solder pad layout............................................................. 5 Packing information.......................................................................... 6 Reel packing.................................................................................... 7 Suggested thermal profiles for soldering processes............................. 7 High reliability test capabilities...........................................................8 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date DS-221723 2008/02/10 Revised Date - Revision Page. A 8 Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS 225mW Surface Mount Common Anode Dual Zener TVS - 3.0V-26V Package outline (C) (A) 0.072 (1.80) 0.024 (0.61) 0.012 (0.30) 0.047 (1.19) 0.120 (3.00) 0.059 (1.47) 0.002 (0.05) 0.084 (2.10) R 0.05 (0.002) Mechanical data 0.014 (0.35) 0.020 (0.51) .084(2.10) (B) 0.01 (0.25) • • 0.108 (2.70) • capability.. Small surface mounting type, ideally for automated assembly process. ESD rating of class N ( exceeding 16KV) per human body Model. Lead-free parts meet environmental standards of MIL-STD-19500 /228 0.124 (3.10) single bi-directional configurations. • Low leakage current. • 24-40 Watts peak power protection, excellent clamping .068(1.70) 0.042 (1.05) • Silicon epitaxial planar chip structure. • Allow either two separated uni-directional configurations or a 0.034 (0.85) SOT-23 Features 0.035 (0.88) • Epoxy : UL94-V0 rated flame retardant • Case : Molded Glass, SOT-23 • Terminals :Plated terminals, solderable per MIL-STD-750, Dimensions in inches and (millimeters) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.008 gram Maximum ratings (at T =25 C unless otherwise noted) o A PARAMETER Peak ower dissipation CONDITIONS @ T A =25°C, mounted on FR-5 Board Derate above 25OC, Note 2 @ T A =25°C, mounted on Aluminum Substrate Forward voltage Thermal resistance MIN. TYP. MAX. UNIT 24 40 W @1.0ms, TL<=25°C, Note 1 MMBZ5V6A thru MMBZ10VA MMBZ12VA thru MMBZ33VA Power dissipation Symbol Derate above 25OC, Note 3 P PK PD PD 225 mW 1.8 mW/ OC 300 mW 2.4 mW/°C junction to ambient R èJA 556 junction to lead R èJC 417 Storage temperature T STG Operating temperature TJ -65 -55 o C/W +175 o C +150 o C Note 1. Non-Repetitive Current Pulse, per Fig. 5 and derated above T A =25°C per Fig. 6 2. FR-5 with area1.0 X 0.75 X 0.062 thick 3. Aluminum substrate with area 0.4 X 0.3 X 0.024 thick Http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 Document ID Issued Date DS-221723 2008/02/10 Revised Date - Revision Page. A 8 Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS Electrical characteristics (at T =25 C unless otherwise noted) o A Zener Voltage @I T, (1), (2) Part No. V Z @ I T ( Volts) IT Clamping Voltage@IPP, (3) Leakage current @ V RWM V RWM IR V C @ I PP I PP èV BR Marking code mA Min. Nom. Max. Volts uA Volts A mV/°C MMBZ5V6A 20 5.32 5.6 5.88 3.0 5.0 8.0 3.0 1.26 5A6 MMBZ6V2A 1.0 5.89 6.2 6.51 3.0 0.5 8.7 2.76 2.80 6A2 MMBZ6V8A 1.0 6.46 6.8 7.14 4.5 0.5 9.6 2.5 3.4 6A8 MMBZ9V1A 1.0 8.65 9.1 9.56 6.0 0.5 14 1.7 7.5 9A1 MMBZ10VA 1.0 9.50 10 10.5 6.5 0.5 14.2 1.7 7.5 10A MMBZ12VA 1.0 11.40 12 12.60 8.5 0.5 17 2.35 7.5 12A MMBZ15VA 1.0 14.25 15 15.75 12 0.5 21 1.9 12.3 15A MMBZ18VA 1.0 17.10 18 18.90 14.5 0.5 25 1.6 15.3 18A MMBZ20VA 1.0 19.00 20 21.00 17 0.5 28 1.4 17.2 20A MMBZ27VA 1.0 25.65 27 28.35 22 0.5 40 1.0 24.3 27A MMBZ33VA 1.0 31.35 33 34.65 26 0.5 46 0.87 30.4 33A O 1. VBR measured at pulse test cureent IT at an ambient temperature of 25 C 2. ZZT and ZZK Are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)=0.1I Z(DC), with the AC frequency=1.0kHZ, For MMBZ5V6A, ZZT<11Ù@IZT=20mA, ZZK<1600Ù@I ZK=0.25mA. For the others, ZZT & ZZK are not tested & can be ignored. 3. Surge current waveform per Fig. 5 and derate per Fig. 6 IF V Z : Reverse Zener Voltage @ I ZT I ZT : Reverse Current Z ZT : Maximum Zener Impedance @IZT I ZK : Reverse Current Z ZK : Maximum Zener Impedance @IZK I R : Reverse Leakage Current @VR V R : Reverse Voltage I F : Forward Current V F : Forward Voltage @ IF VZ VR IR VF I ZT V Zener Voltage Regulation Rating and characteristic curves (MMBZ5V6A thru MMBZ33VA) FIG.2-TYPICAL LEAKAGE CURRENT VERSUS TEMPERATURE 18 1000 15 100 12 I R (nA) BREAKDOWN VOLTAGE (V) V BR @ I T Fig.1-TYPICAL BREAKDOWN VOLTAGE VERSUS TEMPERATURE(UPPER CURVE FOR EACH VOLTAGE IS BIDIREC TIONAL MODE,LOWER CURVE IS UNDIRECTIONAL MODE ) 9 10 1 6 0.1 3 0.01 -40 0 -40 0 +50 +100 +150 TEMPERATURE (OC) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 +25 +85 +125 TEMPERATURE (OC) Page 3 Document ID Issued Date DS-221723 2008/02/10 Revised Date - Revision Page. A 8 Rating and characteristic curves (MMBZ5V6A thru MMBZ33VA) Fig.3-TYPICAL CAPACITANCE VERSUS BIAS VOLTAGE ( UPPER CURVE FOR EACH VOLTAGE IS BIDIRECTIONAL MODE, LOWER CURVE IS UNDIRECTIONAL MODE) PD, POWER DISSIPATION (mW) FIG.4-STEADY STATE POWER DERATING CURVE 320 C, CPACITANCE (pF) 280 240 200 5.6V 160 120 15V 80 40 0 0 2 1 300 ALUMINA SUBSTRATE 250 200 150 FR-5 BOARD 100 50 0 3 0 20 40 BIAS(V) PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25OC VALUE (%) PEAK VALUE - IPP HALF VALUE = 50 I PP 2 tP 0 0 2 1 100 120 140 160 180 200 160 180 200 TEMPERATURE ( C) PULSE WIDTH(tP)IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. 100 80 O FIG.5-PULSE WAVEFORM t r <= 10us 60 3 4 FIG.6-PULSE DERATING CURVE 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 O TA, AMBIENT TEMPERATURE ( C) t, TIME (ms) FIG.8-MAXIMUM NON-REPETITIVE SURGE POWER, PPK(NOM)VERSUS PW FIG.7-MAXIMUM NON-REPETITIVE SURGE POWER, PPK VERSUS PW POWER IS DEFINED AS VZ(NOM) X IZ(pk)WHERE VZ(NOM) IS THE NOMINAL ZENER VOLTAGE MEASURED AT THE LOW TEST CURRENT USED FOR VOLTAGE CLASSIFICATION. 100 PPK, PEAK SURGE POWER (W) PPK, PEAK SURGE POWER (W) POWER IS DEFINED AS VRSM X IZ(pk)WHERE VRSM IS THE CLAMPING VOLTAGE AT IZ(pk). RECTANGULAR WAVEFORM, T A = 25OC BIDIRECTIONAL 10 UNIDIRECTIONAL 100 RECTANGULAR O WAVEFORM, T A = 25 C BIDIRECTIONAL 10 UNIDIRECTIONAL 1 1 0.1 1 10 100 1000 PW, PULSE WIDTH (ms) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 0.1 10 1 100 1000 PW, PULSE WIDTH (ms) Page 4 Document ID Issued Date DS-221723 2008/02/10 Revised Date - Revision Page. A 8 Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS Pinning information Pin Simplified outline Symbol (C) PinA PinB PinC no connection cathode anode (A) (B) (A) (B) (C) Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date DS-221723 2008/02/10 Revised Date - Revision Page. A 8 Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-23 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.15 2.77 1.22 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date DS-221723 2008/02/10 Revised Date - Revision Page. A 8 Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS Reel packing PACKAGE REEL SIZE SOT-23 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3000 4.0 15,000 185*180*65 178 CARTON SIZE (m/m) APPROX. GROSS WEIGHT (kg) CARTON (pcs) 405*375*405 12.4 300,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=10 oC~35 oC Humidity=65%±15% 2.Reflow soldering of surface-mount devices Critical Zone T L to T P tP TP Ramp-up TL tL Temperature T smax T smin TS ts Preheat 25 Ramp-down t25 oC to Peak Wave Soldering IR Reflow Time 3.Flow (wave)soldering (solder dipping) Profile Feature Soldering Condition Average ramp-up rate(T L to TP ) <3oC/sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 100oC 150oC 60~120sec Tsmax to TL -Ramp-upRate <3oC/sec Time maintained above: -Temperature(TL ) -Time(tL ) 183oC 60~150sec 255oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(tP ) 10~30sec Ramp-down Rate <6 oC/sec Time 25oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date DS-221723 2008/02/10 Revised Date - Revision Page. A 8 Formosa MS MMBZ5V6A THRU MMBZ33VA SMD Zener Diode TVS High reliability test capabilities Item Test Conditions Reference o 1. Solder Resistance at 260±5 C for 10±2sec. immerse body into solder 1/16"±1/32" MIL-STD-750D METHOD-2031 2. Solderability at 245±5 oC for 5 sec. MIL-STD-202F METHOD-208 3. Pull Test 1kg in axial lead direction for 10 sec. MIL-STD-750D METHOD-2036 4. Bend Lead 0.5kg weight applied to each lead bending arc 90o±5 o for 3 times. MIL-STD-750D METHOD-2036 5. High Temperature Reverse Bias V R=V Z rate at T J=150 oC for 168 hrs. MIL-STD-750D METHOD-1026 6. Forward Operation Life Rated zener current at T=25oC for 500hrs. MIL-STD-750D METHOD-1027 T A = 25OC, IF = 100mA On state: power on for 5 min. off state: power off for 5 min, on and off for 500 cycles. MIL-STD-750D METHOD-1036 7. Intermittent Operation Life 8. Pressure Cooker 9. Temperature Cycling 10. Thermal Shock 11. Forward Surge 12. Humidity 13. High Temperature Storage Life 14. Solvent Resistance http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 15P SIG at TA=121 oC for 4 hrs. MIL-STD-750D METHOD-1051 -55 oC to +125oC dwelled for 30 min. and transferred for 5min. total 10 cycles. MIL-STD-750D METHOD-1056 0 oC for 5 min. rise to 100 oC for 5 min. total 10 cycles. MIL-STD-750D METHOD-4066-2 8.3ms single half sine-wave superimposed on rated load, one surge. at TA=65 oC, RH=98% for 1000hrs. MIL-STD-750D METHOD-1038 at 175oC for 1000 hrs. MIL-STD-750D METHOD-1031 Dip into Freon at 25oC for 1 min. MIL-STD-202F METHOD-215 Page 8 Document ID Issued Date DS-221723 2008/02/10 Revised Date - Revision Page. A 8