MMBZ5V6A THRU MMBZ33VA

Formosa
MS
MMBZ5V6A THRU MMBZ33VA
SMD Zener Diode TVS
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Electrical characteristics................................................................... 3
Rating and characteristic curves........................................................ 3.4
Pinning information........................................................................... 5
Suggested solder pad layout............................................................. 5
Packing information.......................................................................... 6
Reel packing.................................................................................... 7
Suggested thermal profiles for soldering processes............................. 7
High reliability test capabilities...........................................................8
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
DS-221723
2008/02/10
Revised Date
-
Revision
Page.
A
8
Formosa
MS
MMBZ5V6A THRU MMBZ33VA
SMD Zener Diode TVS
225mW Surface Mount Common Anode
Dual Zener TVS - 3.0V-26V
Package outline
(C)
(A)
0.072 (1.80)
0.024 (0.61)
0.012 (0.30)
0.047 (1.19)
0.120 (3.00)
0.059 (1.47)
0.002 (0.05)
0.084 (2.10)
R 0.05
(0.002)
Mechanical data
0.014 (0.35)
0.020 (0.51)
.084(2.10)
(B)
0.01 (0.25)
•
•
0.108 (2.70)
•
capability..
Small surface mounting type, ideally for automated
assembly process.
ESD rating of class N ( exceeding 16KV) per human body Model.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.124 (3.10)
single bi-directional configurations.
• Low leakage current.
• 24-40 Watts peak power protection, excellent clamping
.068(1.70)
0.042 (1.05)
• Silicon epitaxial planar chip structure.
• Allow either two separated uni-directional configurations or a
0.034 (0.85)
SOT-23
Features
0.035 (0.88)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded Glass, SOT-23
• Terminals :Plated terminals, solderable per MIL-STD-750,
Dimensions in inches and (millimeters)
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Maximum ratings (at T =25 C unless otherwise noted)
o
A
PARAMETER
Peak ower dissipation
CONDITIONS
@ T A =25°C, mounted on FR-5 Board
Derate above 25OC, Note 2
@ T A =25°C, mounted on Aluminum Substrate
Forward voltage
Thermal resistance
MIN.
TYP.
MAX.
UNIT
24
40
W
@1.0ms, TL<=25°C, Note 1
MMBZ5V6A thru MMBZ10VA
MMBZ12VA thru MMBZ33VA
Power dissipation
Symbol
Derate above 25OC, Note 3
P PK
PD
PD
225
mW
1.8
mW/ OC
300
mW
2.4
mW/°C
junction to ambient
R èJA
556
junction to lead
R èJC
417
Storage temperature
T STG
Operating temperature
TJ
-65
-55
o
C/W
+175
o
C
+150
o
C
Note 1. Non-Repetitive Current Pulse, per Fig. 5 and derated above T A =25°C per Fig. 6
2. FR-5 with area1.0 X 0.75 X 0.062 thick
3. Aluminum substrate with area 0.4 X 0.3 X 0.024 thick
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Page 2
Document ID
Issued Date
DS-221723
2008/02/10
Revised Date
-
Revision
Page.
A
8
Formosa
MS
MMBZ5V6A THRU MMBZ33VA
SMD Zener Diode TVS
Electrical characteristics (at T =25 C unless otherwise noted)
o
A
Zener Voltage @I T, (1), (2)
Part No.
V Z @ I T ( Volts)
IT
Clamping Voltage@IPP, (3)
Leakage current @ V RWM
V RWM
IR
V C @ I PP
I PP
èV BR
Marking
code
mA
Min.
Nom.
Max.
Volts
uA
Volts
A
mV/°C
MMBZ5V6A
20
5.32
5.6
5.88
3.0
5.0
8.0
3.0
1.26
5A6
MMBZ6V2A
1.0
5.89
6.2
6.51
3.0
0.5
8.7
2.76
2.80
6A2
MMBZ6V8A
1.0
6.46
6.8
7.14
4.5
0.5
9.6
2.5
3.4
6A8
MMBZ9V1A
1.0
8.65
9.1
9.56
6.0
0.5
14
1.7
7.5
9A1
MMBZ10VA
1.0
9.50
10
10.5
6.5
0.5
14.2
1.7
7.5
10A
MMBZ12VA
1.0
11.40
12
12.60
8.5
0.5
17
2.35
7.5
12A
MMBZ15VA
1.0
14.25
15
15.75
12
0.5
21
1.9
12.3
15A
MMBZ18VA
1.0
17.10
18
18.90
14.5
0.5
25
1.6
15.3
18A
MMBZ20VA
1.0
19.00
20
21.00
17
0.5
28
1.4
17.2
20A
MMBZ27VA
1.0
25.65
27
28.35
22
0.5
40
1.0
24.3
27A
MMBZ33VA
1.0
31.35
33
34.65
26
0.5
46
0.87
30.4
33A
O
1. VBR measured at pulse test cureent IT at an ambient temperature of 25 C
2. ZZT and ZZK Are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)=0.1I Z(DC), with the AC
frequency=1.0kHZ,
For MMBZ5V6A, ZZT<11Ù@IZT=20mA, ZZK<1600Ù@I ZK=0.25mA. For the others, ZZT & ZZK are not tested & can be ignored.
3. Surge current waveform per Fig. 5 and derate per Fig. 6
IF
V Z : Reverse Zener Voltage @ I ZT
I ZT : Reverse Current
Z ZT : Maximum Zener Impedance @IZT
I ZK : Reverse Current
Z ZK : Maximum Zener Impedance @IZK
I R : Reverse Leakage Current @VR
V R : Reverse Voltage
I F : Forward Current
V F : Forward Voltage @ IF
VZ VR
IR VF
I ZT
V
Zener Voltage Regulation
Rating and characteristic curves (MMBZ5V6A thru MMBZ33VA)
FIG.2-TYPICAL LEAKAGE CURRENT VERSUS
TEMPERATURE
18
1000
15
100
12
I R (nA)
BREAKDOWN VOLTAGE (V)
V BR @ I T
Fig.1-TYPICAL BREAKDOWN VOLTAGE VERSUS
TEMPERATURE(UPPER CURVE FOR EACH VOLTAGE IS BIDIREC
TIONAL MODE,LOWER CURVE IS UNDIRECTIONAL MODE )
9
10
1
6
0.1
3
0.01
-40
0
-40
0
+50
+100
+150
TEMPERATURE (OC)
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+25
+85
+125
TEMPERATURE (OC)
Page 3
Document ID
Issued Date
DS-221723
2008/02/10
Revised Date
-
Revision
Page.
A
8
Rating and characteristic curves (MMBZ5V6A thru MMBZ33VA)
Fig.3-TYPICAL CAPACITANCE VERSUS BIAS VOLTAGE
( UPPER CURVE FOR EACH VOLTAGE IS BIDIRECTIONAL MODE,
LOWER CURVE IS UNDIRECTIONAL MODE)
PD, POWER DISSIPATION (mW)
FIG.4-STEADY STATE POWER DERATING CURVE
320
C, CPACITANCE (pF)
280
240
200
5.6V
160
120
15V
80
40
0
0
2
1
300
ALUMINA SUBSTRATE
250
200
150
FR-5 BOARD
100
50
0
3
0
20
40
BIAS(V)
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ TA = 25OC
VALUE (%)
PEAK VALUE - IPP
HALF VALUE =
50
I PP
2
tP
0
0
2
1
100
120
140
160
180
200
160
180
200
TEMPERATURE ( C)
PULSE WIDTH(tP)IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.
100
80
O
FIG.5-PULSE WAVEFORM
t r <= 10us
60
3
4
FIG.6-PULSE DERATING CURVE
120
100
80
60
40
20
0
0
20
40
60
80
100
120
140
O
TA, AMBIENT TEMPERATURE ( C)
t, TIME (ms)
FIG.8-MAXIMUM NON-REPETITIVE SURGE
POWER, PPK(NOM)VERSUS PW
FIG.7-MAXIMUM NON-REPETITIVE SURGE
POWER, PPK VERSUS PW
POWER IS DEFINED AS VZ(NOM) X IZ(pk)WHERE VZ(NOM) IS
THE NOMINAL ZENER VOLTAGE MEASURED AT THE LOW TEST
CURRENT USED FOR VOLTAGE CLASSIFICATION.
100
PPK, PEAK SURGE POWER (W)
PPK, PEAK SURGE POWER (W)
POWER IS DEFINED AS VRSM X IZ(pk)WHERE VRSM IS
THE CLAMPING VOLTAGE AT IZ(pk).
RECTANGULAR
WAVEFORM, T A = 25OC
BIDIRECTIONAL
10
UNIDIRECTIONAL
100
RECTANGULAR
O
WAVEFORM, T A = 25 C
BIDIRECTIONAL
10
UNIDIRECTIONAL
1
1
0.1
1
10
100
1000
PW, PULSE WIDTH (ms)
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0.1
10
1
100
1000
PW, PULSE WIDTH (ms)
Page 4
Document ID
Issued Date
DS-221723
2008/02/10
Revised Date
-
Revision
Page.
A
8
Formosa
MS
MMBZ5V6A THRU MMBZ33VA
SMD Zener Diode TVS
Pinning information
Pin
Simplified outline
Symbol
(C)
PinA
PinB
PinC
no connection
cathode
anode
(A)
(B)
(A)
(B)
(C)
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
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TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
DS-221723
2008/02/10
Revised Date
-
Revision
Page.
A
8
Formosa
MS
MMBZ5V6A THRU MMBZ33VA
SMD Zener Diode TVS
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOT-23
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.15
2.77
1.22
1.50
178.00
62.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
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TEL:886-2-22696661
FAX:886-2-22696141
Page 6
Document ID
Issued Date
DS-221723
2008/02/10
Revised Date
-
Revision
Page.
A
8
Formosa
MS
MMBZ5V6A THRU MMBZ33VA
SMD Zener Diode TVS
Reel packing
PACKAGE
REEL SIZE
SOT-23
7"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
3000
4.0
15,000
185*180*65
178
CARTON
SIZE
(m/m)
APPROX.
GROSS WEIGHT
(kg)
CARTON
(pcs)
405*375*405
12.4
300,000
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=10 oC~35 oC Humidity=65%±15%
2.Reflow soldering of surface-mount devices
Critical Zone
T L to T P
tP
TP
Ramp-up
TL
tL
Temperature
T smax
T smin
TS
ts
Preheat
25
Ramp-down
t25 oC to Peak
Wave Soldering
IR Reflow
Time
3.Flow (wave)soldering (solder dipping)
Profile Feature
Soldering Condition
Average ramp-up rate(T L to TP )
<3oC/sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
100oC
150oC
60~120sec
Tsmax to TL
-Ramp-upRate
<3oC/sec
Time maintained above:
-Temperature(TL )
-Time(tL )
183oC
60~150sec
255oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(tP )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25oC to Peak Temperature
<6minutes
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Page 7
Document ID
Issued Date
DS-221723
2008/02/10
Revised Date
-
Revision
Page.
A
8
Formosa
MS
MMBZ5V6A THRU MMBZ33VA
SMD Zener Diode TVS
High reliability test capabilities
Item Test
Conditions
Reference
o
1. Solder Resistance
at 260±5 C for 10±2sec.
immerse body into solder 1/16"±1/32"
MIL-STD-750D
METHOD-2031
2. Solderability
at 245±5 oC for 5 sec.
MIL-STD-202F
METHOD-208
3. Pull Test
1kg in axial lead direction for 10 sec.
MIL-STD-750D
METHOD-2036
4. Bend Lead
0.5kg weight applied to each lead bending
arc 90o±5 o for 3 times.
MIL-STD-750D
METHOD-2036
5. High Temperature Reverse Bias
V R=V Z rate at T J=150 oC for 168 hrs.
MIL-STD-750D
METHOD-1026
6. Forward Operation Life
Rated zener current at T=25oC for 500hrs.
MIL-STD-750D
METHOD-1027
T A = 25OC, IF = 100mA
On state: power on for 5 min.
off state: power off for 5 min,
on and off for 500 cycles.
MIL-STD-750D
METHOD-1036
7. Intermittent Operation Life
8. Pressure Cooker
9. Temperature Cycling
10. Thermal Shock
11. Forward Surge
12. Humidity
13. High Temperature Storage Life
14. Solvent Resistance
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15P SIG at TA=121 oC for 4 hrs.
MIL-STD-750D
METHOD-1051
-55 oC to +125oC dwelled for 30 min.
and transferred for 5min. total 10 cycles.
MIL-STD-750D
METHOD-1056
0 oC for 5 min. rise to 100 oC for 5 min. total 10 cycles.
MIL-STD-750D
METHOD-4066-2
8.3ms single half sine-wave superimposed
on rated load, one surge.
at TA=65 oC, RH=98% for 1000hrs.
MIL-STD-750D
METHOD-1038
at 175oC for 1000 hrs.
MIL-STD-750D
METHOD-1031
Dip into Freon at 25oC for 1 min.
MIL-STD-202F
METHOD-215
Page 8
Document ID
Issued Date
DS-221723
2008/02/10
Revised Date
-
Revision
Page.
A
8