Formosa MS

Formosa MS
Chip Zener Diode
ZS100B THRU ZS330B
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Electrical characteristics................................................................... 3
Rating and characteristic curves........................................................ 4
Pinning information........................................................................... 5
Suggested solder pad layout............................................................. 5
Packing information.......................................................................... 6
Reel packing.................................................................................... 7
Suggested thermal profiles for soldering processes............................. 7
High reliability test capabilities........................................................... 8
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TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
DS-121711
2008/02/10
Revised Date
2010/10/05
Revision
Page.
D
8
Formosa MS
Chip Zener Diode
ZS100B THRU ZS330B
1000mW Surface Mount Zener
Diodes - 100V-330V
Package outline
Features
SMA
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Glass passivated chip junction.
• Standard zener voltage tolerance ±5%.
• Low inductance.
• Low profile package.
• Built-in strain relief.
• Lead-free parts meet environmental standards of
0.196(4.9)
0.180(4.5)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.ZS100B-H.
0.068(1.7)
0.060(1.5)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic,JEDEC DO-214AC / SMA
• Terminals :Plated terminals, solderable per MIL-STD-750,
0.032(0.8) Typ.
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.05 gram
Maximum ratings (at T =25 C unless otherwise noted)
o
A
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward voltage
I F = 200 mA
VF
1.20
V
Power Dissipation
T L = 75 ° C
PD
1000
mW
Operating junction temperature range
Storage temperature range
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Page 2
TJ
-55
+150
o
C
T STG
-65
+175
o
C
Document ID
Issued Date
DS-121711
2008/02/10
Revised Date
2010/10/05
Revision
Page.
D
8
Formosa MS
Chip Zener Diode
ZS100B THRU ZS330B
Electrical characteristics (at T A=25 oC unless otherwise noted)
Part No.
Marking
code
Zener
voltage
Test
current
Zener
impedance
Min. V Z @ I ZT Nom. V Z @ I ZT Max. V Z @ I ZT
I ZT
Z ZT @ I ZT
Z ZK @ I ZK
Leakage
current
I ZK
IR
VR
Volts
Volts
Volts
mA
( Ω )Max
( Ω )Max
mA
(uA)Max
Volts
ZS100B
Z100
95
100
105
5.0
750
5000
0.25
0.5
75
ZS105B
Z105
99.75
105
110.25
5.0
750
5000
0.25
0.5
77
ZS110B
Z110
104.5
110
115.5
5.0
750
5000
0.25
0.5
80
ZS115B
Z115
109.25
115
120.75
5.0
750
5000
0.25
0.5
85
ZS120B
Z120
114
120
126
5.0
850
5000
0.25
0.5
90
ZS130B
Z130
123.5
130
136.5
5.0
1000
5000
0.25
0.5
95
ZS140B
Z140
133
140
147
5.0
1200
5000
0.25
0.5
105
ZS150B
Z150
142.5
150
157.5
5.0
1300
5000
0.25
0.5
110
ZS160B
Z160
152
160
168
5.0
1500
5000
0.25
0.5
120
ZS170B
Z170
161.5
170
178.5
5.0
2200
5000
0.25
0.5
130
ZS180B
Z180
171
180
189
5.0
2200
5000
0.25
0.5
140
ZS190B
Z190
180.5
190
199.5
5.0
2500
5000
0.25
0.5
150
ZS200B
Z200
190
200
210
5.0
2500
8000
0.25
0.5
165
ZS210B
Z210
199.5
210
220.5
5.0
5000
9000
0.25
0.5
165
ZS220B
Z220
209
220
231
5.0
5000
9000
0.25
0.5
170
ZS230B
Z230
218.5
230
241.5
5.0
5000
9000
0.25
0.5
175
ZS240B
Z240
228
240
252
5.0
5000
9000
0.25
0.5
180
ZS250B
Z250
237.5
250
262.5
5.0
5000
9000
0.25
0.5
190
ZS260B
Z260
247
260
273
5.0
5000
9000
0.25
0.5
195
ZS270B
Z270
256.5
270
283.5
5.0
5000
9000
0.25
0.5
200
ZS280B
Z280
266
280
294
5.0
5000
9000
0.25
0.5
210
ZS290B
Z290
275.5
290
304.5
5.0
5000
9000
0.25
0.5
215
ZS300B
Z300
285
300
315
5.0
5000
9000
0.25
0.5
220
ZS310B
Z310
294.5
310
325.5
5.0
5000
9000
0.25
0.5
225
ZS320B
Z320
304
320
336
5.0
5000
9000
0.25
0.5
233
ZS330B
Z330
313.5
330
346.5
5.0
5000
9000
0.25
0.5
240
Note : 5% tolerance of Zener voltage for suffix "B" ex: ZS110B
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 3
Document ID
Issued Date
DS-121711
2008/02/10
Revised Date
2010/10/05
Revision
Page.
D
8
Rating and characteristic curves (ZS100B THRU ZS330B)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
1200
INSTANTANEOUS FORWARD CURRENT,(A)
1000
800
600
400
200
0
0
40
80
120
160
200
o
LEAD TEMPERATURE ( C)
10
1.0
TJ=25 C
Pulse Width 300us
1% Duty Cycle
0.1
.01
FIG.3 - TYPICAL REVERSE
.6
.7
.8
.9
1.0
1.1
1.2
1.3
FORWARD VOLTAGE,(V)
CHARACTERISTICS
100
10
FIG.4 - TYPICAL TEMPERATURE COEFFICIENTS
1.0
TJ=25 C
.1
.01
0
20
40
60
80
100 120 140
VZ TEMPERATURE COEFFICIENT @ IZT, mV/K
REVERSE LEAKAGE CURRENT, (mA)
REVERSE POWER DISSIPATION (mW)
FIG.1-TOTAL POWER DISSIPATION VS.
LEAD TEMPERATURE
1000
500
200
100
50
20
10
10
50
100
200
500
1000
VZ, ZENER VOLTAGE @ IZT, VOLTS
PERCENTAGE RATED PEAK REVERSE VOLTAGE,(%)
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20
Page 4
Document ID
Issued Date
DS-121711
2008/02/10
Revised Date
2010/10/05
Revision
Page.
D
8
Formosa MS
Chip Zener Diode
ZS100B THRU ZS330B
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
1
Symbol
2
1
2
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
A
B
C
SMA
0.110 (2.80)
0.063 (1.60)
0.087 (2.20)
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TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
DS-121711
2008/02/10
Revised Date
2010/10/05
Revision
Page.
D
8
Formosa MS
Chip Zener Diode
ZS100B THRU ZS330B
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SMA
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.80
5.00
1.90
1.50
330.00
50.00
178.00
62.00
13.00
1.75
5.50
4.00
4.00
2.00
0.23
12.00
18.00
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
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TEL:886-2-22696661
FAX:886-2-22696141
Page 6
Document ID
Issued Date
DS-121711
2008/02/10
Revised Date
2010/10/05
Revision
Page.
D
8
Formosa MS
Chip Zener Diode
ZS100B THRU ZS330B
Reel packing
PACKAGE
REEL SIZE
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
APPROX.
GROSS WEIGHT
(kg)
CARTON
(pcs)
SMA
7"
2,000
4.0
20,000
183*155*183
178
382*356*392
160,000
16.0
SMA
13"
7,500
4.0
15,000
337*337*37
330
350*330*360
120,000
14.2
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%± 25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
o
150 C
o
200 C
60~120sec
Tsmax to T L
-Ramp-upRate
o
<3 C /sec
Time maintained above:
-Temperature(T L )
-Time(t L )
o
217 C
60~260sec
o
o
255 C- 0/ + 5 C
Peak Temperature(T P )
o
Time within 5 C of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 C /sec
o
o
Time 25 C to Peak Temperature
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TEL:886-2-22696661
FAX:886-2-22696141
Page 7
<6minutes
Document ID
Issued Date
DS-121711
2008/02/10
Revised Date
2010/10/05
Revision
Page.
D
8
Formosa MS
Chip Zener Diode
ZS100B THRU ZS330B
High reliability test capabilities
Item Test
Conditions
Reference
O
MIL-STD-750D
METHOD-2031
O
MIL-STD-202F
METHOD-208
1. Solder Resistance
at 260 ± 5 C for 10 ± 2sec.
immerse body into solder 1/16" ± 1/32"
2. Solderability
at 245 ± 5 C for 5 sec.
3. High Temperature Reverse Bias
V R=80% rate at T J=150 C for 168 hrs.
4. Pressure Cooker
15P SIG at T A=121 C for 4 hrs.
5. Temperature Cycling
-55 C to +125 C dwelled for 30 min.
and transferred for 5min. total 10 cycles.
MIL-STD-750D
METHOD-1038
O
JESD22-A102
O
O
MIL-STD-750D
METHOD-1051
O
MIL-STD-750D
METHOD-1021
O
6. Humidity
at T A=85 C , RH=85% for 1000hrs.
MIL-STD-750D
METHOD-1031
O
7. High Temperature Storage Life
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at 175 C for 1000 hrs.
Page 8
Document ID
Issued Date
DS-121711
2008/02/10
Revised Date
2010/10/05
Revision
Page.
D
8