LL4148/LL4448 Surface Mount Switching Diodes P b Lead(Pb)-Free SMALL SIGNAL SWITCHING DIODES 150 m AMPERES 75 VOLTS Features: *Silicon Epitaxial Planner Diode *Fast Switching Diodes *500 mW Power Dissipation Mechanical Data: *Case : MINI-MELF Glass Case (SOD-80) *Weight : Approx 0.05 gram MINI-MELF MINI-MELF Outline Dimensions Unit:mm MINI MELF A B C WEITRON http//www.weitron.com.tw Dim A B C Min 3.30 1.30 0.28 Max 3.70 1.60 0.50 LL4148/LL4448 Maximum Ratings ( TA=25 C Unless otherwise noted) Symbol LL4148/ LL4448 Unit Non-Repetitive Peak Voltage VRM 100 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VPWM VRWM VR 75 V IO 150 mA IFSM 2.0 A Pd 500 mW R θJA 300 K/W TJ ,TSTG -65 to +175 C Characteristic Average Rectified Output Current (1) Non-Repetitive Peak Forward Surge Current @t=1.0us Power Dissipation Thermal Resistance Junction to Ambient Operating and Strorage Temperature Range Electrical Characteristics Characteristic Reverse Breakdown Voltage IR= 100ua ( TA=25 C Unless otherwise noted) Symbol Min V(BR)R 100 Max - Unit V Forward Voltage IF=10 mA LL4148 LL4448 IF=5 mA IF=100 mA VF 0.62 1.0 0.72 1.0 Leakage Current VR=20V VR=75V VR=75V, Tj=150 C IR - 25 5 50 Junction Capacitance Cj - 4 PF Reverse Recovery Time IF=10 mA, IR=1mA, VR=6V, RL=100 Ω Trr - 4 nS Note: 1.Valid Provided that device Terminals are Kept at Ambient Temperature. WEITRON http//www.weitron.com.tw V µA LL4148/LL4448 nA 60 Ω 104 D.U.T. V R F =2V 2nF 5K Ω VO 103 RECITIFICATION EFFICIENCY MEASUREMENT CIRCUIT 102 10 VR=20V 1 0 100 200 C FIG 1, LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE A 100 V =tp /T T =1/fp IFRM 10 tp n=0 IF R M T 0.1 0.2 1 0.5 0.1 10-4 10-3 10-1 10-2 10-4 1 10S tp FIG 2, ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION WEITRON http//www.weitron.com.tw LL4148/LL4448 mA 103 Ω 104 102 3 TJ=25 C f=1KHz 10 IF 10 TJ=100 C TJ=25 C 102 1 10 10-1 10-2 0 1 2V 1 VF 10-2 10-1 1 102 10 mA IF FIG 4, DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT FIG 3, FORWARD CHARACTERISTICS mW 1000 900 1.1 TJ=25 C f=1MHz 800 Ptot 700 Ctot(VR) 600 Ctot(DV) 500 1.0 0.9 400 300 0.8 200 100 0 0.7 0 100 200 C TA FIG 5, ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE WEITRON http//www.weitron.com.tw 0 2 4 6 8 1 0 V VR FIG 6, RELATIVE CAPACITANCE VERSUS VOLTAGE