LL60/LL60P Schottky Barrier Diodes Schottky Barrier Diode 30-50 mAMPERES 40-45 VOLTS Features: *Silicon Epitaxial Planner Diode *Low Reverse Current and Low Forward Voltage *Low Current Rectification and High Speed Switching *High Reliability *Used in Recorder, Radio, TV, Telephone as Detectors Mechanical Data: *Case : MINI-MELF Glass Case (SOD-80) *Polarity: Color Band Denotescathode Band *Weight : Approx 0.05 gram MINI-MELF MINI-MELF Outline Dimensions Unit:mm MINI MELF A B C WEITRON http//www.weitron.com.tw Dim A B C Min 3.30 1.30 0.28 Max 3.70 1.60 0.50 LL60/LL60P Maximum Ratings ( TA=25 C Unless otherwise noted) Symbol LL60 LL60P Unit VRRM 40 45 V Non-Repetitive Peak Forward Surge Current @t=1S IFSM 150 500 mA Forward Continuous Current, TA =25 C IF 30 50 mA Characteristic Pepetitive Peak Reverse Voltage Operating and Strorage Temperature Range Electrical Characteristics Characteristic Forward Voltage IF=1 mA IF=30 mA IF=200 mA Rverse Current VR=15V LL60 LL60P TJ , TSTG C ( TA=25 C Unless otherwise noted) Symbol VF LL60 LL60P Min Tpy Max Unit - 0.5 0.5 1.0 V - 0.32 0.24 0.65 0.65 - 0.1 0.5 0.5 1.0 - 2.0 6.0 - - - 1.0 1.0 uA IR LL60 LL60P Junction Capacitance LL60 VR=1V, f=1MHz LL60P VR=10V, f=1MHz Cj Reverse Recovery Time IF=I R=1mA , Irr=1 mA, Rc=100 Trr WEITRON -65 to +125 http//www.weitron.com.tw PF nS LL60/LL60P 0.70 250 0.60 200 LL6 0 IR(UA) 0P LL6 IF(mA) 150 100 P 60 LL 0.50 0.40 0.30 0 LL 60 0.20 50 0.10 0.2 0.4 0.6 0.8 0 1.0 VF(V) 5 7 LL6 0P 6 C J (pF) 5 4 3 2 LL60 1 4 6 VF(V) 8 10 12 FIG.3 Junction Capacitance vs. Continuous Reverse Applied Voltage WEITRON http//www.weitron.com.tw 20 25 30 FIG.2 Reverse Current vs. Continuous Reverse Votlage 8 2 15 VR(V) FIG.1 Fowrad Current vs. Forward Voltage 0 10