HY LL4148

LL4148
SMALL SIGNAL
REVERSE VOLTAGE - 75 Volts
FORWARD CURRENT - 0.15Amperes
SWITCHING DIODE
DL - 35
FEATURES
● Silicon epitaxial planar diode
● High speed switching diode
● 500mW power dissipation
.063(1.6)
.055(1.4)
.020(0.5)
.012(0.3)
.146(3.7)
.130(3.3)
MECHANICAL DATA
.020(0.5)
.012(0.3)
●Case: Mini-MELF glass case
●Polarity: Color band denotes cathode
●Weight : Approx.0.05 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse Vltage
Peak Reverse Voltage
LL4148
UNIT
VR
75
V
VRM
100
V
IO
150
mA
IFSM
500
mA
Average Forward Rectified Current
Half Wave Rectification with Resist .load
at Tamb=25℃ and f≧50HZ
Forward Surge Current at t<1s and TJ=25℃
Power Dissipation at Tamb=25℃
Junction Temperature
Storage Temperature Range
(1)
500
Ptot
mW
TJ
175
℃
TSTG
﹣65 to﹢175
℃
NOTE:(1) Valid provided that electrodes are kept at ambient temperature .
ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
UNIT
VF
﹣
﹣
1
V
IR
IR
IR
﹣
﹣
﹣
﹣
﹣
25
5
50
uA
uA
uA
Ctot
﹣
﹣
4
pF
Vfr
﹣
-
2.5
v
trr
﹣
﹣
4
ns
Thermal Resistance Junction to Ambient
RθJA
﹣
﹣
350(1)
K/W
Rectification Effciency at 100MHZ VRF=2V
ηV
0.45
﹣
﹣
﹣
Forward Voltage at IF=10mA
Leakage Current
at VR=20V
at VR=75V
at VR=20V TJ=150℃
Capacitance at VF=VR=0V
Voltage Rise When Switching ON
Tested With 50mA Pulses
tp=0.1us.Rise Time<30ns.fp=5to 100HZ
Reverse Recovery Time From IF=10mA
VR=6V. RL=100Ω at IR=1mA
NOTE:(1)Valid provided that electrodes are kept at ambient temperature.
~ 416 ~
RATING AND CHARACTERISTIC CURVES
LL4148
FLG.1-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
mW
FIG.2-FORWARD CHARACTERISTICS
103
1000
900
102
800
TJ = 100°C
700
Ptot
I
600
F
10
TJ = 25°C
500
400
1
300
10-1
200
100
0
10-2
0
150
200℃
2V
1
0
VF
TA
FLG.3-ADMISSIBLE REPETITVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
V=tp/T T=1/fp
IFRM
10
IFRM
tp
T
1
0.1
10-5
10-3
10-2
10-1
1
tp
~ 417 ~
10S
RATING AND CHARACTERISTIC CURVES
LL4148
FIG.5-RELATIVE CAPACITANCE
FIG.4-RECTIFICATION EFFICIENCY
MEASUREMENT CIRCUIT
VERSUS VOLTAGE
1.1
D.U.T
60Ω
VRF=2V
= 2nF
VO
5KΩ
Ctot(VR)
Ctot(0V)
TJ = 25°C
f = 1 MHz
1.0
0.9
0.8
0.7
0
4
2
6
10V
8
VR
FIG.7-DYNAMIC FORWARD RESISTANCE
FIG.6-LEAKAGE CURRENT VERSUS
nA
VERSUS FORWARD CURRENT
JUNCTION TEMPERATURE
4
Ω
10
4
10
IR
3
10
3
rF
10
2
10
2
10
10
10
1
0
200 ℃
100
1
-2
10
-1
10
1
2
10
10
Tj
IF
~ 418 ~
m