LL4148 SMALL SIGNAL REVERSE VOLTAGE - 75 Volts FORWARD CURRENT - 0.15Amperes SWITCHING DIODE DL - 35 FEATURES ● Silicon epitaxial planar diode ● High speed switching diode ● 500mW power dissipation .063(1.6) .055(1.4) .020(0.5) .012(0.3) .146(3.7) .130(3.3) MECHANICAL DATA .020(0.5) .012(0.3) ●Case: Mini-MELF glass case ●Polarity: Color band denotes cathode ●Weight : Approx.0.05 grams Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. MAXIMUM RATINGS Reverse Vltage Peak Reverse Voltage LL4148 UNIT VR 75 V VRM 100 V IO 150 mA IFSM 500 mA Average Forward Rectified Current Half Wave Rectification with Resist .load at Tamb=25℃ and f≧50HZ Forward Surge Current at t＜1s and TJ=25℃ Power Dissipation at Tamb=25℃ Junction Temperature Storage Temperature Range (1) 500 Ptot mW TJ 175 ℃ TSTG ﹣65 to﹢175 ℃ NOTE:(1) Valid provided that electrodes are kept at ambient temperature . ELECTRICAL CHARACTERISTICS MIN TYP MAX UNIT VF ﹣ ﹣ 1 V IR IR IR ﹣ ﹣ ﹣ ﹣ ﹣ 25 5 50 uA uA uA Ctot ﹣ ﹣ 4 pF Vfr ﹣ - 2.5 v trr ﹣ ﹣ 4 ns Thermal Resistance Junction to Ambient RθJA ﹣ ﹣ 350(1) K/W Rectification Effciency at 100MHZ VRF=2V ηV 0.45 ﹣ ﹣ ﹣ Forward Voltage at IF=10mA Leakage Current at VR=20V at VR=75V at VR=20V TJ=150℃ Capacitance at VF=VR=0V Voltage Rise When Switching ON Tested With 50mA Pulses tp=0.1us.Rise Time<30ns.fp=5to 100HZ Reverse Recovery Time From IF=10mA VR=6V. RL=100Ω at IR=1mA NOTE:(1)Valid provided that electrodes are kept at ambient temperature. ~ 416 ~ RATING AND CHARACTERISTIC CURVES LL4148 FLG.1-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE mW FIG.2-FORWARD CHARACTERISTICS 103 1000 900 102 800 TJ = 100°C 700 Ptot I 600 F 10 TJ = 25°C 500 400 1 300 10-1 200 100 0 10-2 0 150 200℃ 2V 1 0 VF TA FLG.3-ADMISSIBLE REPETITVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 V=tp/T T=1/fp IFRM 10 IFRM tp T 1 0.1 10-5 10-3 10-2 10-1 1 tp ~ 417 ~ 10S RATING AND CHARACTERISTIC CURVES LL4148 FIG.5-RELATIVE CAPACITANCE FIG.4-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT VERSUS VOLTAGE 1.1 D.U.T 60Ω VRF=2V = 2nF VO 5KΩ Ctot(VR) Ctot(0V) TJ = 25°C f = 1 MHz 1.0 0.9 0.8 0.7 0 4 2 6 10V 8 VR FIG.7-DYNAMIC FORWARD RESISTANCE FIG.6-LEAKAGE CURRENT VERSUS nA VERSUS FORWARD CURRENT JUNCTION TEMPERATURE 4 Ω 10 4 10 IR 3 10 3 rF 10 2 10 2 10 10 10 1 0 200 ℃ 100 1 -2 10 -1 10 1 2 10 10 Tj IF ~ 418 ~ m