8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 8 AMPERES Description: The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PMW motor controls, high efficient DC to DC converters and bridge circuits. DRAIN SOURCE VOLTAGE 600 VOLTAGE 2 DRAIN TO-220 Features: * 8.0A, 600V,RDS(ON) =1.2 Ohms @VGS =10V * Ultra low gate charge 1 GATE * Low reverse transfer capacitance * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Maximum Ratings(T A 3 SOURCE TO-220F =25 C Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 Avalanche Current - (Note 1) I AR 8.0 Continuous Drain Current @TC = 25°C @TC = 100°C ID 8.0 4.6 Pulsed Drain Current, TP Limited by TJMAX - (Note 1) IDM 28 Avalanche Energy, Single Pulsed (Note 2) E AS 624 mJ Avalanche Energy, Repetitive (Note 1) E AR 14.7 mJ dv/dt 4.5 V/ns PD 147 48 W TJ +150 ˚C Topr,Tstg -55~+150 ˚C Peak Diode Recovery dv/dt (Note 3) Total Power Dissipation TO-220 TO-220F Junction Temperature Operating and Storage Temperature Unit V A Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. WEITRON http:www.weitron.com.tw 1/8 01-Apr-2011 8N60 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ Max Unit BVDSS 600 - - VGS(Th) 2.0 - 4.0 IGSS - - 100 -100 nA IDSS - - 10 μA RDS(on) - 1.0 1.2 Ω ∆BV DSS /∆TJ - 0.7 - V/˚C Ciss - 1095 - Coss - 93 - Crss - 12 - Turn-on Delay Time VDD =300V,ID =7.5A,R G=25Ω(Note 4, 5) td(on) - 15 - Turn-on Rise Time VDD =300V,ID =7.5A,R G=25Ω(Note 4, 5) tr - 58 - Turn-off Delay Time VDD =300V,ID =7.5A,R G=25Ω(Note 4, 5) td(off) - 80 - Turn-off Fall Time VDD =300V,ID =7.5A,R G=25Ω(Note 4, 5) tf - 61 - Total Gate Charge VDS =480V,ID =7.5A,VGS =10V(Note 4, 5) Qg - 26.8 - Gate-Source Charge VDS =480V,ID =7.5A,VGS =10V(Note 4, 5) Qgs - 5.1 - Gate-Drain Change VDS =480V,ID =7.5A,VGS =10V(Note 4, 5) Qgd - 12 - Static Drain-Source Breakdown Voltage Gate Threshold Voltage @V GS=0,ID=250μA @V DS=VGS,ID=250μA Gate-Source Leakage current Forward@V GS=30V,V DS=0V ReVerse@V GS=-30V,VDS=0V Drain-SourceLeakage Current(Tj=25˚C) @VDS=600V,VGS=0 Drain-Source On-State Resistance @VGS=10V,I D=4.0A Breakdown Voltage Temperature Coefficient I D =250 µA, Referenced to 25°C V Dynamic Input Capacitance Output Capacitance @VGS=0V,VDS=25V,f=1.0MHz @VGS=0V,VDS=25V,f=1.0MHz Reverse Transfer Capacitance @VGS=0V,VDS=25V,f=1.0MHz pF Switching WEITRON http:www.weitron.com.tw ns 2/8 nC 01-Apr-2011 8N60 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ Max Unit VSD - - 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS - - 8.0 A Maximum Pulsed Drain-Source Diode Forward Current I SM - - 28 A Reverse Recovery Time @VGS=0V,IS=7.5A,dlF/dt=100A/µs (Note 4) T rr - 365 - ns Reverse Recovery Charge @VGS=0V,IS=7.5A,dlF/dt=100A/µs(Note 4) Q rr - 3.4 - µC Source-Drain Diode Characteristics Drain-Source Diode Forward Voltage @VGS=0V,IS=8.0A Thermal Data Characteristic Symbol Value Unit Junction-to-Ambient TO-220 TO-220F RJA 62.5 120 °C/W Junction-to-Case TO-220 TO-220F RJC 0.85 2.6 °C/W Note: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 30mH, IAS = 5.64A, VDD = 185V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 7.5A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Ordering Information Order Number Pin Assignment Packing Package 1 2 3 8N60P TO-220 G D S Tube 8N60F TO-220F G D S Tube WEITRON http:www.weitron.com.tw 3/8 01-Apr-2011 8N60 Test Circuits And Waveforms + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms WEITRON http://www.weitron.com.tw 4/8 01-Apr-2011 8N60 Test Circuits And Waveforms(cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% t D(ON ) tD (OFF) tF tR Fig. 2A Switching Test Circuit Same Type as D.U.T. 50kΩ 12V 0.2 μF Fig. 2B Switching Waveforms QG 10V 0.3 μF VDS QGS QGD VGS DUT VG 3mA Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RD 10V VDD D.U.T. tp IAS tp Fig. 4A Unclamped Inductive Switching Test Circuit WEITRON http://www.weitron.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5/8 01-Apr-2011 8N60 Typical Characteristics Body Diode Forward Voltage vs. Source Current 6 10 Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (ohm) On-Resistance Variation vs. Drain Current and Gate Voltage 5 VGS=10V 4 3 VGS=20V 2 1 0 Note: TJ=25 °C 5 0 10 15 20 Drain Current, ID (A) 150°C 25 °C 1 Notes: 1. VGS=0V 2. 250µs Test 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) Capacitance Characteristics (Non-Repetitive) 1900 1700 Gate Charge Characteristics 12 Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd 10 Ciss 1500 1300 VDS=300V 8 1100 Coss 900 700 4 2 http://www.weitron.com.tw Note: ID=8A 0 0 10 5 10 15 20 25 30 Total Gate Charge, QG (nC) Drain-SourceVoltage, VDS (V) WEITRON VDS=120V 6 Crss 500 Notes: 300 1. V =0V GS 100 2. f = 1MHz 0 0.1 1 VDS=480V 6/8 01-Apr-2011 8N60 Typical Characteristics Breakdown Voltage Variation vs. Temperature On-Resistance Junction Temperature 3.0 1.2 2.5 1.1 2.0 1.0 1.5 1.0 0.9 Note: 1. VGS=0V 2. ID=250µA 0.8 -100 0.0 -100 -50 0 50 100 150 200 Junction Temperature, TJ (℃) -50 0 50 100 150 200 Junction Temperature, TJ (℃) Maximum Drain Current vs. Case Temperature Maximum Safe Operating Area 100 Note: 1. VGS=10V 2. ID=4A 0.5 10 Operation in This Area is Limited by RDS(on) Drain Current, ID (A) Drain Current, ID (A) 100µs 100µs 10 1ms DC 1 10ms Notes: 1. TJ=25℃ 2. TJ=150℃ 3. Single Pulse 8 6 4 2 0.1 0 1 25 10 100 1000 Drain-Source Voltage, VDS (V) 50 75 100 125 150 Case Temperature, TC (℃) Transient Thermal Response Curve 1 D=0.5 D=0.2 D=0.1 0.1 D=0.05 0.02 0.01 Single pulse 0.01 10-5 Notes: 1. θJC (t) = 0.85℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) WEITRON http://www.weitron.com.tw 7/8 01-Apr-2011 8N60 TO-220 Outline Dimensions Unit:mm TO-220 A D C1 Dim A A1 B B1 C C1 D E E1 G G1 F H L L1 Ø F H E1 E B1 L1 A1 L B G C G1 Φ M in M ax 4.67 4.47 2.82 2.52 0.91 0.71 1.37 1.17 0.53 0.31 1.37 1.17 10.31 10.01 8.90 8.50 12.06 12.446 2.54 TYP 4.98 5.18 2.89 2.59 0.30 0.00 13.4 13.8 3.96 3.56 3.93 3.73 TO-220F Outline Dimensions Unit:mm TO-220F Symbol Dimension 1 A 3.3±0.15 B 2.55±0.20 C 4.72±0.2 D 1.47MAX L 15.75±0.30 WEITRON http://www.weitron.com.tw 8/8 Dimension 2 2.70±0.75 3.0±0.20 4.5±0.20 1.75MAX 15±0.30 01-Apr-2011