AMS4N60 4A, 600V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The AMS 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 1 TO-220F FEATURES * RDS(ON) = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness TO-220F1 SYMBOL 1 1 1 1 TO-263 1 Advanced Monolithic Systems TO-251 TO-252 http://www.ams-semitech.com TO-262 AMS4N60 ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 4.4 A 4.0 A Continuous ID Drain Current Pulsed (Note 2) IDM 16 A 260 mJ Single Pulsed 4N60 EAS (Note 3) Avalanche Energy 4N60-E 200 mJ Repetitive (Note 2) EAR 10.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 106 W Power Dissipation TO-220F/TO-220F1 PD 36 W TO-251/ TO-252 50 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case PACKAGE TO-220/TO-262/TO-263 TO-220F/TO-220F1 TO-251/ TO-252 TO-220/TO-262/TO-263 TO-220F/TO-220F1 TO-251/ TO-252 SYMBOL θJA θJc RATINGS 62.5 62.5 83 1.18 3.47 2.5 2 Advanced Monolithic Systems http://www.ams-semitech.com UNIT °С/W °С/W °С/W °С/W °С/W °С/W AMS4N60 ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS IDSS VGS = 0V, ID = 250μA VDS = 600V, VGS = 0V Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 300V, ID = 4.0A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 480V,ID= 4.0A, Gate-Source Charge QGS VGS= 10V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 4.4A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0 V, IS = 4.4A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature 3 Advanced Monolithic Systems http://www.ams-semitech.com MIN TYP MAX UNIT 600 0.6 V 10 μA 100 nA -100 nA V/°С 2.2 4.0 2.5 V Ω 520 70 8 670 90 11 pF pF pF 13 45 25 35 15 3.4 7.1 35 100 60 80 20 ns ns ns ns nC nC nC 1.4 V 4.4 A 17.6 A 2.0 250 1.5 ns μC AMS4N60 TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms 4 Advanced Monolithic Systems http://www.ams-semitech.com AMS4N60 TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms 5 Advanced Monolithic Systems Time http://www.ams-semitech.com AMS4N60 TYPICAL CHARACTERISTICS Drain-Source On-Resistance, RDS(ON) (Normalized) (Ω) Drain-Source Breakdown Voltage, BVDSS (Normalized) (V) On-State Characteristics 10 Transfer Characteristics VGS 10V 9V 8V 7V 6V 5.5V 5 V Bottorm:5.0V 10 Top: 25°С 1 5.0V 150°С 1 0.1 Notes: 1. 250µs Pulse Test 2. TC=25°С 0.1 1 Notes: 1. VDS=50V 2. 250µs Pulse Test 0.1 2 10 4 8 Gate-Source Voltage, VGS (V) Drain-to-Source Voltage, VDS (V) 6 Advanced Monolithic Systems 6 http://www.ams-semitech.com 10 AMS4N60 TYPICAL CHARACTERISTICS(Cont.) Capacitance Characteristics (Non-Repetitive) 1200 1000 12 Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd 10 Ciss 800 600 Gate Charge Characteristics Coss Notes: 1. VGS=0V 2. f = 1MHz 0 0.1 VDS=120V 6 4 400 200 VDS=300V VDS=480V 8 2 Crss Note: ID=4A 0 1 0 10 5 10 PD (w) 7 Advanced Monolithic Systems 15 20 Total Gate Charge, QG (nC) Drain-SourceVoltage, VDS (V) Thermal Response, θJC (t) http://www.ams-semitech.com 25 AMS4N60 AMS assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all AMS products described or contained herein. AMS products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 8 Advanced Monolithic Systems http://www.ams-semitech.com