4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. D-PAK3/(TO-251) 2 DRAIN Features: * * * * * * D-PAK/(TO-252) R DS(ON) =2.5 Ohms @VGS Ultra low gate charge =10V Low reverse transfer Capacitance 1 GATE Fast switching capability Avalanche energy Specified Improved dv/dt capability, high ruggedness Maximum Ratings(T A TO-220 3 TO-220F SOURCE =25 C Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS ±30 Avalanche Current - (Note 1) I AR 4.4 Continuous Drain Current @ T C=25˚C @ T C=100˚C ID 4.0 2.8 Pulsed Drain Current, TP Limited by TJMAX - (Note 1) IDM 16 Avalanche Energy, Single Pulsed (Note 2) E AS 276 mJ Avalanche Energy, Repetitive, Limited by TJMAX E AR 10.6 mJ dv/dt 4.5 V/ns PD 100 33 77 0.8 0.26 0.69 W TJ,Tstg -55~+150 ˚C Peak Diode Recovery dv/dt (Note 3) Total Power Dissipation 4N60P(T C=25˚C) 4N60F(T C=25˚C) 4N60I/D(TC=25˚C) 4N60P( Derate above25˚C) 4N60F( Derate above25˚C) 4N60I/D( Derate above25˚C) Operating Junction and Storage Temperature Range Unit V A Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. WEITRON http:www.weitron.com.tw 1/9 13-Apr-2011 4N60 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ Max BVDSS 600 - - VGS(Th) 2.0 - 4.0 IGSS - - 100 -100 - - 10 - - 100 RDS(on) - - 2.5 gfs - 4.0 - ∆BV DSS /∆TJ - 0.6 - Ciss - 672 - Coss - 66 - Crss - 4.7 11 Turn-on Delay Time VDD =300V,ID =4.4A,R G=25Ω(Note 4, 5) td(on) - 27 - Turn-on Rise Time VDD =300V,ID =4.4A,R G=25Ω(Note 4, 5) tr - 19 Turn-off Delay Time VDD =300V,ID =4.4A,R G=25Ω(Note 4, 5) td(off) - 160 - Turn-off Fall Time VDD =300V,ID =4.4A,R G=25Ω(Note 4, 5) tf - 22 - Total Gate Charge VDS=480V,VGS=10V,I D=4.4(Note 4, 5) Qg - 19.8 - Gate-Source Charge VDS=480V,VGS=10V,I D=4.4(Note 4, 5) Qgs - 4.0 - Gate-Drain Change VDS=480V,VGS=10V,I D=4.4(Note 4, 5) Qgd - 7.2 - Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage @V GS=0,ID=250μA @V DS=VGS,ID=250μA Gate-Source Leakage current Forward@V GS=30V,V DS=0V ReVerse@V GS=-30V,VDS=0V Drain-SourceLeakage Current(Tj=25˚C) @VDS=600V,VGS=0 Drain-SourceLeakage Current(Tj=125˚C) @VDS=480V,VGS=0 Drain-Source On-State Resistance @VGS=10V,I D=2.0A Forward Transconductance @VDS=50V,I D=2.2A(Note 4) Breakdown Voltage Temperature Coefficient I D =250 µA, Referenced to 25°C IDSS V nA μA Ω S V/˚C Dynamic Input Capacitance Output Capacitance @VGS=0V,VDS=25V,f=1.0MHz @VGS=0V,VDS=25V,f=1.0MHz Reverse Transfer Capacitance @VGS=0V,VDS=25V,f=1.0MHz pF Switching WEITRON http:www.weitron.com.tw ns 2/9 nC 13-Apr-2011 4N60 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ Max Unit VSD - - 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS - - 4.4 A Maximum Pulsed Drain-Source Diode Forward Current I SM - - 16.0 A Reverse Recovery Time @VGS=0V,IS=4A,dlF/dt=100A/µs (Note 4) T rr - 300 - ns Reverse Recovery Charge @VGS=0V,IS=4A,dlF/dt=100A/µs(Note 4) Q rr - 3.4 - µC - 62.5 120 112 °C/W - 1.25 3.79 2.2 °C/W Source-Drain Diode Characteristics Drain-Source Diode Forward Voltage @VGS=0V,IS=4.0A Thermal Data Junction-to-Ambient 4N60P 4N60F 4N60I/D θJA - Junction-to-Case 4N60P 4N60F 4N60I/D θJC - Note: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 30mH, IAS = 3.81A, VDD = 175V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4.4A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Ordering Information Order Number Pin Assignment Packing Package 1 2 3 4N60P TO-220 G D S Tube 4N60F TO-220F G D S Tube 4N60I D-PAK3/TO-251 G D S Tube 4N60D D-PAK/TO-252 G D S Tube WEITRON http:www.weitron.com.tw 3/9 13-Apr-2011 4N60 Test Circuits And Waveforms + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms WEITRON http://www.weitron.com.tw 4/9 13-Apr-2011 4N60 Test Circuits And Waveforms(cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% t D(ON ) Pulse Width ≤ 1μs tD (OFF) tF tR Duty Factor ≤0.1% Fig. 2A Switching Test Circuit Same Type as D.U.T. 50kΩ 12V 0.2μF Fig. 2B Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT VG 3mA Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RD 10V VDD D.U.T. tp IAS tp Fig. 4A Unclamped Inductive Switching Test Circuit WEITRON http://www.weitron.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5/9 13-Apr-2011 4N60 Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 Note: 1. VGS=0V 2. ID=250µA 0.9 0.8 50 100 150 200 -100 -50 0 Junction Temperature, TJ (℃) On-Resistance Junction Temperature Drain-Source On-Resistance, R DS(ON) (Normalized) Drain-Source Breakdown Voltage, BVDSS (Normalized) Typical Characteristics 3.0 2.5 2.0 1.5 Note: 1. VGS=10V 2. ID=4A 1.0 0.5 0.0 -100 -50 Maximum Drain Current vs. Case Temperature 5 1ms 10ms Notes: 1. T J=25 ℃ 2. TJ=150℃ 3. Single Pulse 0.1 1 10 Drain Current, ID (A) Drain Current, I D (A) 100 µs 1 DC 4 3 2 1 0 Drain-Source Voltage, VDS (V) 50 75 100 125 Case Temperature, TC (℃) On-State Characteristics Transfer Characteristics 10 V GS Top : 10V 9V 8V 7V 6V 5.5V 5V Bottorm :5.0V 0.1 100 1000 5.0V Notes: 1. 250µs Pulse Test 2. TC=25℃ 25℃ 1 0.1 http://www.weitron.com.tw 150℃ Notes: 1. VDS =50V 2. 250 µs Pulse Test 2 4 6 8 10 Gate-Source Voltage, VGS (V) 0.1 1 10 Drain-to-Source Voltage, VDS (V) WEITRON 25 10 Drain Current, I D (A) Drain Current, ID (A) Operation in This Area is Limited by R DS(on ) 1 50 100 150 200 Junction Temperature, TJ (℃) Maximum Safe Operating Area 10 0 6/9 13-Apr-2011 4N60 Typical Characteristics On State Current vs. Allowable Case Temperature Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (ohm) On-Resistance Variation vs. Drain Current and Gate Voltage 6 5 VGS =20V 4 VGS=10V 3 2 1 0 Note: T J=25ć 6 8 10 12 2 4 Drain Current, I D (A) 0 10 150ć 25ć 1 Notes: 1. VGS=0V 2. 250μs Test 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) Capacitance Characteristics (Non-Repetitive) 1200 12 Gate-Source Voltage, VGS (V) Ciss=Cgs +Cgd (Cds=shorted ) Coss=Cds +Cgd Crs s=Cgd 1000 Capacitance (pF) Gate Charge Characteristics Ciss 800 Coss 600 Notes: 1. V GS =0V 2. f = 1MHz 400 200 Crss 10 VDS=300V VDS=480V 8 VDS=120V 6 4 2 Note: I D=4A 0 0 0.1 1 0 10 5 10 15 20 25 Total Gate Charge, QG (nC) Drain-SourceVoltage, VDS (V) Transient Thermal Response Curve Power Dissipation 120 100 80 PD (w) Thermal Response, șJC (t) 1 0.1 40 Notes : 1. ӰJ C (t) = 1.18ć/ W Max. 2. Duty Factor , D=t 1/t2 3. TJ M-TC=P DM×ӰJC (t) 20 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 0 10 Square Wave Pulse Duration, t1 (sec) WEITRON http://www.weitron.com.tw 60 7/9 0 20 40 60 80 100 120 140 160 T C (°C) 13-Apr-2011 4N60 TO-220 Outline Dimensions Unit:mm TO-220 A D C1 Dim A A1 B B1 C C1 D E E1 G G1 F H L L1 Ø F H E1 E B1 L1 A1 L B G C G1 Φ M in M ax 4.67 4.47 2.82 2.52 0.91 0.71 1.37 1.17 0.53 0.31 1.37 1.17 10.31 10.01 8.90 8.50 12.06 12.446 2.54 TYP 4.98 5.18 2.89 2.59 0.30 0.00 13.4 13.8 3.96 3.56 3.93 3.73 TO-220F Outline Dimensions Unit:mm TO-220F Symbol Dimension 1 A 3.3±0.15 B 2.55±0.20 C 4.72±0.2 D 1.47MAX L 15.75±0.30 WEITRON http://www.weitron.com.tw 8/9 Dimension 2 2.70±0.75 3.0±0.20 4.5±0.20 1.75MAX 15±0.30 13-Apr-2011 4N60 TO-251 Outline Dimensions unit:mm TO-251 E A G 4 H B 1 2 Dim A B C D E G H J K L M N J 3 M N K D C L M in 6 .4 0 6 .8 0 0 .5 0 2 .2 0 0 .4 5 1 .0 0 5 .4 0 0 .4 5 0 .9 0 6 .5 0 - M ax 6 .8 0 7 .2 0 0 .8 0 2 .3 0 2 .5 0 0 .5 5 1 .6 0 5 .8 0 0 .6 9 1 .5 0 0 .9 0 1 . Em it t er 2 . Base 3 . Collect or TO-252 Outline Dimensions unit:mm E TO-252 A G 4 H Dim A B C D E G H J K L M J 1 2 3 B M K D C WEITRON http://www.weitron.com.tw L 9/9 Min 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90 Max 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 13-Apr-2011