Wisdom Semiconductor
WFF1 2 N80
N-Channel MOSFET
Features
■
RDS(on) (Max 1.1 Ω )@VGS=10V
■
Gate Charge (Typical 44nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
■
■
■
{
Symbol
2. Drain
●
◀
1. Gate{
▲
●
●
General Description
{
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
3. Source
TO-220F
1
2
3
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
WFF12N80
Unit
800
V
- Continuous (TC = 25°C)
12
A
- Continuous (TC = 100°C)
7.12
A
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
IAR
- Pulsed
45
A
± 30
V
Single Pulsed Avalanche Energy
(Note 2)
920
mJ
Avalanche Current
(Note 1)
12
A
EAR
Repetitive Avalanche Energy
(Note 1)
24
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
PD
Power Dissipation (TC = 25°C)
(Note 1)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
260
W
1.92
W/°C
-55 to +150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
WFF12N80
Unit
RθJC
Thermal Resistance, Junction-to-Case, Max.
0.52
°C/W
RθCS
Thermal Resistance, Case-to-Sink, Typ.
0.24
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
40
°C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Unit
800
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA, Referenced to 25°C
--
0.98
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
--
--
10
µA
VDS = 640 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 5.0 A
gFS
Forward Transconductance
VDS = 50 V, ID = 5.0 A
(Note 4)
--
0.93
1.1
Ω
--
5.8
--
S
--
2150
2800
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
180
230
pF
--
15
20
pF
--
50
110
ns
--
130
270
ns
--
90
190
ns
--
80
170
ns
--
45
58
nC
--
13.5
--
nC
--
17
--
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDD = 400 V, ID = 10.0A,
RG = 25 Ω
(Note 4, 5)
VDS = 640 V, ID = 10.0A,
VGS = 10 V
(Note 4, 5)
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
10.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
40.0
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS =10.0 A
--
--
1.4
V
trr
Reverse Recovery Time
--
730
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 10.0 A,
dIF / dt = 100 A/µs
--
10.9
--
µC
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 17.3mH, IAS =10.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10.0A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
(Note 4)
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
o
150 C
o
-55 C
o
25 C
0
10
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
-1
10
※ Notes :
1. VDS = 50V
2. 250µs Pulse Test
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
2.5
2.0
VGS = 10V
VGS = 20V
1.5
1.0
1
10
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
※ Note : TJ = 25℃
0.5
-1
0
5
10
15
20
25
30
10
0.2
0.4
0.6
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
3500
Ciss
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
1000
500
1.4
VDS = 160V
VDS = 400V
10
2000
1500
1.2
12
Crss
VGS, Gate-Source Voltage [V]
Capacitance [pF]
2500
1.0
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
0.8
VSD, Source-Drain voltage [V]
VDS = 640V
8
6
4
2
※ Note : ID = 10A
0
-1
10
0
10
1
10
VDS, Drain-Source Voltage [V]
0
0
10
20
30
QG, Total Gate Charge [nC]
40
50
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 5.0 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
12
Operation in This Area
is Limited by R DS(on)
2
10 µs
10
100 µs
1
10
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
10 ms
DC
0
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
2
10
6
4
2
-2
10
8
0
25
3
10
10
50
75
100
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
Zθ JC(t), Thermal Response
10
0
D = 0 .5
10
※ N o te s :
1 . Z θ J C (t) = 0 .5 2 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .2
-1
0 .1
0 .0 5
PDM
t1
0 .0 2
0 .0 1
10
s in g le p u ls e
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
t2
10
0
10
1
125
150
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Package Dimension
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
0.35 ±0.10
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
9.75 ±0.30
MAX1.47
Dimensions in Millimeters
PV ( KOREA ) Package Dimensions
PV ( KOREA ) Package Dimensions ( Continued )
S&E ( KOREA ) Package Dimensions
m m
In c h
D im
M in
Typ
M ax
M in
Typ
M ax
A
1 0 .4
1 0 .6
0 .4 0 9
0 .4 1 7
B
6 .1 8
6 .4 4
0 .2 4 3
0 .2 5 4
C
9 .5 5
9 .8 1
0 .3 7 6
0 .3 8 6
D
1 3 .4 7
1 3 .7 3
0 .5 3 0
0 .5 4 0
E
6 .0 5
6 .1 5
0 .2 3 8
0 .2 4 2
F
1 .2 6
1 .3 6
0 .0 5 0
0 .0 5 4
G
3 .1 7
3 .4 3
0 .1 2 5
0 .1 3 5
H
1 .8 7
2 .1 3
0 .0 7 4
0 .0 8 4
I
2 .5 7
2 .8 3
0 .1 0 1
0 .1 1 1
J
2 .5 4
0 .1 0 0
K
5 .0 8
0 .2 0 0
L
2 .5 1
2 .6 2
0 .0 9 9
0 .1 0 3
M
1 .2 3
1 .3 6
0 .0 4 8
0 .0 5 4
N
0 .4 5
0 .6 3
0 .0 1 8
0 .0 2 5
O
0 .6 5
0 .7 8
0 .0 0 2 5
0 .0 3 1
ф
3 .1 8
0 .1 2 5
ф 1
3 .0
0 .1 1 8
ф 2
1 .5
0 .0 5 9