WSD501H - Weitron

WSD501H
Surface Monut Schottky Barrier Diode
SCHOTTKY BARRIER
RECTIFIERS
100m AMPERES
40 VOLTS
Features:
*Extremely Low VF .
*Very Small Conduction Losses.
*Schottky Barrier Diodes Encapsulated in SOD-323 Package.
SOD-323
SOD-323 Outline Demensions
Unit:mm
MILLMETERS
Min
Max
Dim
1.60
1.80
A
B
1.15
1.35
C
0.80
1.00
0.25
0.40
D
E
0.15 REF
H
0.00
0.10
J 0.089
0.177
K
2.30
2.70
PIN 1.CATHODE
2.ANODE
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WSD501H
MAXIMUM RATING
Characteristics
Symbol
WSD 501H
Unit
Breakdown Voltage
BV
45
Volts
Continuous Reverse Voltage
VR
40
Volts
Average Rectified Forward Current
IO
100
mAmps
Peak Forward Surge Current
(8.3ms1/2 Sine Wave)
IFSM
1.0
Amps
Storage Temperature
Tstg
-40 to+125
C
ELECTRICAL CHARACTERISTICS (Ta=25 C)
Characteristics
Symbol
Device Marking
WSD 501H
Unit
JV
Maximum Instantneous Forward Voltage
IF=100mA
VF
0.55
Volts
Maximum Instantneous Reverse Current
(VR=10V)
IR
30
µAmps
Typical Junction Capacitance
(VR=10V, f=1MHz)
CJ
20
Pf
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WSD501H
Electrical characteristics curves (Ta=25 C unless specified otherwise)
10m
REVERSE CURRENT: I R (A)
125 C
1
0
0.1
C
-25
C
0.2
25
C
10
75
5
C
100
12
FORWARD CURRENT :IF (mA)
1000
0.3
0.4
0.5
1m
75 C
100µ
10µ
1µ
0.1
0.6
25 C
0
10
FORWARD VOLTAGE:VF (V)
60
40
20
0
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta ( C)
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
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40
Fig.2 Reverse characteristics
CAPACITANCE BETWEEN TERMINALS :CT (pF)
Io CURRENT (%)
80
30
REVERSE VOLTAGE:VR (V)
FIG: 1 Forward characteristics
100
20
100
10
1
0
5
10
15 20
25
30
35
REVERSE VOLTASGE : VR (V)
Fig.3 Capacitance between
terminals characteristics