WSD501H Surface Monut Schottky Barrier Diode SCHOTTKY BARRIER RECTIFIERS 100m AMPERES 40 VOLTS Features: *Extremely Low VF . *Very Small Conduction Losses. *Schottky Barrier Diodes Encapsulated in SOD-323 Package. SOD-323 SOD-323 Outline Demensions Unit:mm MILLMETERS Min Max Dim 1.60 1.80 A B 1.15 1.35 C 0.80 1.00 0.25 0.40 D E 0.15 REF H 0.00 0.10 J 0.089 0.177 K 2.30 2.70 PIN 1.CATHODE 2.ANODE WEITRON http://www.weitron.com.tw WSD501H MAXIMUM RATING Characteristics Symbol WSD 501H Unit Breakdown Voltage BV 45 Volts Continuous Reverse Voltage VR 40 Volts Average Rectified Forward Current IO 100 mAmps Peak Forward Surge Current (8.3ms1/2 Sine Wave) IFSM 1.0 Amps Storage Temperature Tstg -40 to+125 C ELECTRICAL CHARACTERISTICS (Ta=25 C) Characteristics Symbol Device Marking WSD 501H Unit JV Maximum Instantneous Forward Voltage IF=100mA VF 0.55 Volts Maximum Instantneous Reverse Current (VR=10V) IR 30 µAmps Typical Junction Capacitance (VR=10V, f=1MHz) CJ 20 Pf WEITRON http://www.weitron.com.tw WSD501H Electrical characteristics curves (Ta=25 C unless specified otherwise) 10m REVERSE CURRENT: I R (A) 125 C 1 0 0.1 C -25 C 0.2 25 C 10 75 5 C 100 12 FORWARD CURRENT :IF (mA) 1000 0.3 0.4 0.5 1m 75 C 100µ 10µ 1µ 0.1 0.6 25 C 0 10 FORWARD VOLTAGE:VF (V) 60 40 20 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta ( C) Fig. 4 Derating curve (mounting on glass epoxy PCBs) WEITRON http://www.weitron.com.tw 40 Fig.2 Reverse characteristics CAPACITANCE BETWEEN TERMINALS :CT (pF) Io CURRENT (%) 80 30 REVERSE VOLTAGE:VR (V) FIG: 1 Forward characteristics 100 20 100 10 1 0 5 10 15 20 25 30 35 REVERSE VOLTASGE : VR (V) Fig.3 Capacitance between terminals characteristics