WEITRON WSD450F

WSD450F
Surface Mount Schottky Barrier Diodes
SMALL SIGNAL
SCHOTTKY DIODES
100m AMPERES
40 VOLTS
Features:
*Small mold type.
*Low IR
*High reliability.
3
Construction:
Silicon epitaxial planer
1
2
SOT-323(SC-70)
SOT-323 Outline Demensions
Unit:mm
A
B
T OP V IE W
C
D
E
G
H
K
J
WEITRON
hpp://www.weitron.com.tw
L
M
1/3
Dim
A
B
C
D
E
G
H
J
K
L
M
SOT-323
Min
0.30
1.15
2.00
0.30
1.20
1.80
0.00
0.80
0.42
0.10
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
16-Aug-07
WEITRON
WSD450F
MaximumRatings
(Ta=25°C Unless otherwise noted)
Symbol
Value
Unit
VRM
45
Volts
Reverse Voltage (DC)
VR
40
mA
Average rectified forward current
IO
100
mA
IFSM
1
A
TJ
125
°C
Tstg
-40 to +125
°C
Characteristic
Reverse Voltage (repetitive peak)
Forward Current surge peak (60Hz, 1cyc)
Operating Junction
Temperature Range
Storage Temperature Range
ElectricalCharacteristics
(TA=25 C Unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Forward Voltage
IF=10mA
VF
-
-
0.45
Volts
Capacitance between terminals
(VR=10V, f=1.0MHz)
CT
-
6.0
-
PF
Reverse currect
(VR=10V)
IR
-
-
1.0
µAdc
Characteristic
DeviceMarking
Item
WSD450F
WEITRON
http://www.weitron.com.tw
EqivalentCir cuitdiagram
Marking
3
B4 , KL5
2/3
1
16-Aug-07
WEITRON
1m
100m
100µ
10m
REVERSE CURRENT : IR (A)
1
Ta
=1
25
°C
75
°C
25
°C
25
°C
FORWARD CURRENT : IF (A)
WSD450F
1m
100µ
10µ
0
0.1
0.2
0.3
0.4
0.5
0.6
Ta=125°C
10µ
75°C
1µ
25°C
100n
10n
0
0.7
FORWARD VOLTAGE : VF (V)
10
15
20
25
30
35
REVERSE VOLTAGE : VR (V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
100
50
100
Io CURRENT (%)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
5
20
10
5
60
40
20
2
0
0
2
4
6
8
10
12
0
0
14
Fig. 3 Capacitance between
terminals characteristics
http://www.weitron.com.tw
25
50
75
100
125
AMBIENT TEMPERATURE : Ta (°C)
REVERSE VOLTAGE : VR (V)
WEITRON
80
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
3/3
16-Aug-07