ES2A-S thru ES2J-S Surface Mount Super Fast Rectifiers

ES2A-S thru ES2J-S
Surface Mount Super Fast Rectifiers
REVERSE VOLTAGE
50 TO 600 VOLTS
FORWARD CURRENT
2.0 AMPERE
P b Lead(Pb)-Free
Features:
* Batch process design, excellent power dissipatio
ers
better reverse leakage current and thermal resistance.
* Low
e surface mounted application in order to
optimize board space.
* High current capability.
* Superfast recovery tim for switching mode application.
* High surge current capability.
* Glass passivated chip junction.
Mechanical Data:
SMB-S
* Epoxy:UL94-V0 rated flame retardant
* Case : Molded plastic,DO-214AA / SMB-S
* Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
* Polarity : Indicated by cathode band
* Mounting Position : Any
* Weight : Approximated 0.072 gram
SMB-S Outline Dimension
Unit:mm
SMB-S
B
D
C
A
Dim
Min
Max
A
3.10
5.20
3.50
5.60
B
C
D
E
E
G
0.5(TYP.)
1.90
2.10
1.50
1.70
1.0(TYP.)
G
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ES2A-S thru ES2J-S
Maximum Ratings and Electrical Characteristics(TA=25°C Unless Otherwise Noted)
Characteristics
Symbol
ES2A-S ES2B-S ES2C-S ES2D-S ES2F-S ES2G-S ES2J-S
Unit
Repetitive Peak Reverse Voltage
VRRM
50
100
150
200
300
400
600
V
RMS Voltage
VRMS
35
70
105
140
210
280
420
V
Continuous Reverse Voltage
VR
50
100
150
200
300
400
600
V
Forward Rectified Current
Io
2.0
A
IFSM
50
A
Forward Surge Current,8.3 ms Single Half
Sine-Wave Superimposed on Rated Load
Maximum Forward Voltage
IF=2A
VF
Reverse Current @Ta = 25°C
@Ta = 125°C
IR
5.0
100
μA
Maximum Reverse Recovery Time(NOTE1)
Trr
35
nS
Diode Junction Capacitance
f=1MHz and applied 4V DC Reverse Voltage
CJ
25
PF
Typical Thermal Resistance
Junction to Ambient, note 2
RθJA
Junction to Case, note 2
RθJC
37
22
°C/W
TJ
-55 to +150
°C
TSTG
-65 to +175
°C
OperatingTemperature Range
StorageTemperature Range
0.95
1.25
1.70
V
NOTES: 1.Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
2.Mounted on 2.0 mm x 1.5 mm PCB
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ES2A-S thru ES2J-S
FIG.1-TYPICAL FORWARD
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
CHARACTERISTICS
2.8
AVERAGE FORWARD CURRENT,(A)
S
~E
2F
-S
ES
2J
-S
ES
1.0
S2
G-
ES
2D
-S
ES
2A
-S~
INSTANTANEOUS FORWARD CURRENT,(A)
10
.1
2 .4
2 .0
1.6
1 .2
.8
P.C.B. Mounted on
2.0 mm x 1.5 mm
Copper Pad Areas
.4
0
0
20
40
Ta=25 C
60
80
100
120
140
160
180
LEAD TEMPERATURE (°C)
Pulse Width 300us
1% Duty Cycle
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
.6
.8
1.0
1.2
1.4
1.6
PEAK FORWARD SURGE CURRENT,(A)
50
.001
.4
1.8
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
NONINDUCTIVE
10
NONINDUCTIVE
( )
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
( )
40
30
8.3ms
8.3ms Single
Single Half
Half
Ta=25 C
Sine
Sine Wave
Wave
20
JEDEC
JEDEC method
method
10
0
1
5
50
10
100
(+)
1
NONINDUCTIVE
OSCILLISCOPE
(NOTE 1)
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
70
JUNCTION CAPACITANCE,(pF)
trr
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
-1.0A
60
50
40
30
20
10
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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