ES2A-S thru ES2J-S Surface Mount Super Fast Rectifiers REVERSE VOLTAGE 50 TO 600 VOLTS FORWARD CURRENT 2.0 AMPERE P b Lead(Pb)-Free Features: * Batch process design, excellent power dissipatio ers better reverse leakage current and thermal resistance. * Low e surface mounted application in order to optimize board space. * High current capability. * Superfast recovery tim for switching mode application. * High surge current capability. * Glass passivated chip junction. Mechanical Data: SMB-S * Epoxy:UL94-V0 rated flame retardant * Case : Molded plastic,DO-214AA / SMB-S * Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 * Polarity : Indicated by cathode band * Mounting Position : Any * Weight : Approximated 0.072 gram SMB-S Outline Dimension Unit:mm SMB-S B D C A Dim Min Max A 3.10 5.20 3.50 5.60 B C D E E G 0.5(TYP.) 1.90 2.10 1.50 1.70 1.0(TYP.) G WEITRON http://www.weitron.com.tw 1/3 03-Jan-2014 ES2A-S thru ES2J-S Maximum Ratings and Electrical Characteristics(TA=25°C Unless Otherwise Noted) Characteristics Symbol ES2A-S ES2B-S ES2C-S ES2D-S ES2F-S ES2G-S ES2J-S Unit Repetitive Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 V RMS Voltage VRMS 35 70 105 140 210 280 420 V Continuous Reverse Voltage VR 50 100 150 200 300 400 600 V Forward Rectified Current Io 2.0 A IFSM 50 A Forward Surge Current,8.3 ms Single Half Sine-Wave Superimposed on Rated Load Maximum Forward Voltage IF=2A VF Reverse Current @Ta = 25°C @Ta = 125°C IR 5.0 100 μA Maximum Reverse Recovery Time(NOTE1) Trr 35 nS Diode Junction Capacitance f=1MHz and applied 4V DC Reverse Voltage CJ 25 PF Typical Thermal Resistance Junction to Ambient, note 2 RθJA Junction to Case, note 2 RθJC 37 22 °C/W TJ -55 to +150 °C TSTG -65 to +175 °C OperatingTemperature Range StorageTemperature Range 0.95 1.25 1.70 V NOTES: 1.Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A 2.Mounted on 2.0 mm x 1.5 mm PCB WEITRON http://www.weitron.com.tw 2/3 03-Jan-2014 ES2A-S thru ES2J-S FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE CHARACTERISTICS 2.8 AVERAGE FORWARD CURRENT,(A) S ~E 2F -S ES 2J -S ES 1.0 S2 G- ES 2D -S ES 2A -S~ INSTANTANEOUS FORWARD CURRENT,(A) 10 .1 2 .4 2 .0 1.6 1 .2 .8 P.C.B. Mounted on 2.0 mm x 1.5 mm Copper Pad Areas .4 0 0 20 40 Ta=25 C 60 80 100 120 140 160 180 LEAD TEMPERATURE (°C) Pulse Width 300us 1% Duty Cycle .01 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .6 .8 1.0 1.2 1.4 1.6 PEAK FORWARD SURGE CURRENT,(A) 50 .001 .4 1.8 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50 NONINDUCTIVE 10 NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) ( ) 40 30 8.3ms 8.3ms Single Single Half Half Ta=25 C Sine Sine Wave Wave 20 JEDEC JEDEC method method 10 0 1 5 50 10 100 (+) 1 NONINDUCTIVE OSCILLISCOPE (NOTE 1) NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 70 JUNCTION CAPACITANCE,(pF) trr | | | | | | | | +0.5A 0 -0.25A -1.0A 60 50 40 30 20 10 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) WEITRON http://www.weitron.com.tw 3/3 03-Jan-2014