SFM11MH1 - Weitron

SFM11MH1 thru SFM18MH1
Surface Mount Super Fast Recovery Rectifiers
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERES
50-600 VOLTS
P b Lead(Pb)-Free
Features:
* Batch process design, excellent power dissipation offers better reverse
leakage current and thermal resistance.
* Low profile surface mounted application in order to optimize board space.
* Tiny plastic SMD package.
* High current capability.
* Super fast recovery time for switching mode application.
* High surge current capability.
* Glass passivated chip junction.
SOD-123H1
Mechanical Data:
* Epoxy : UL94-V0 rated flame retardant
* Case : Molded plastic, SOD-123H1
* Terminals : Plated terminals, solderable per MIL-STD-750, Method 2026
* Polarity : Indicated by cathode band
* Mounting Position : Any
* Weight : Approximated 0.0103 gram
SOD-123H1 Outline Dimension
B
unit:mm
SOD-123H1
C
Dim
A
B
C
D
F
H
J
A
D
F
J
H
H
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Min
Max
1.4
1.8
3.3
3.7
0.3(Typ.)
0.1(Typ.)
0.1(Typ.)
0.8(Typ.)
0.6
1.0
21-Jul-2014
SFM11MH1 thru SFM18MH1
Maximum Ratings and Electrical Characteristics(@ Ta=25ºC unless otherwise noted)
Characteristics
Symbol
11
12
13 14
15 16 17
18
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
150
200
300
400
500
600
V
Maximum RMS Voltage
VRMS
35
70
70
140
210
280
350
420
V
Maximum DC Blocking Voltage
VDC
50
100
100
200
300
400
500
600
V
Maximum Average Forward Rectified Current
Io
1.0
A
Peak Forward Surge Current,8.3 ms Single Half
Sine-Wave Superimposed on Rated Load (JEDEC)
IFSM
25
A
Maximum Instantaneous At 1.0A DC
VF
Maximum DC Reverse Current @Ta = 25°C
At Rated DC BlockingVoltage @Ta = 125°C
IR
5.0
100
μA
Max Reverse Recovery Time(note 1)
Trr
35
nS
Typical Junction Capacitance(note 2)
CJ
10
PF
OperatingTemperature Range
TJ
-55 to +150
°C
TSTG
-55 to +150
°C
StorageTemperature Range
0.95
1.25
1.7
V
note 1. Reverse recovery time test condition, IF =0.5A,IR =1.0A,IRR =0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
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21-Jul-2014
SFM11MH1 thru SFM18MH1
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
H1
16
M
H
1
~S
F
18
M
H1
M
SF
M
15
M
SF
M
17
M
H
1~
SF
1.0
M
1~
SF
M1
4M
H
SF
M1
1M
H
.1
1.2
1.0
0.8
0.6
P.C.B. Mounted on
0.2"x0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0.4
0.2
0
0
25
50
75
100
125
150
175
LEAD TEMPERATURE (°C)
TJ=25 C
Pulse Width 300us
1% Duty Cycle
.01
.001
.4
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
.6
.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
( )
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
( )
PEAK FORWAARD SURGE CURRENT,(A)
INSTANTANEOUS FORWARD CURRENT,(A)
1
10
50
40
30
8.3ms Single Half
TJ=25 C
JEDEC method
10
0
1
5
(+)
1Ω
NONINDUCTIVE
Sine Wave
20
50
10
100
NUMBER OF CYCLES AT 60Hz
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
70
JUNCTION CAPACITANCE,(pF)
trr
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
-1.0A
60
50
40
30
20
10
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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21-Jul-2014