WEITRON SFM15MH

SFM11MH thru
SFM18MH
Surface Mount Standard Recovery
Glass Passivated Rectifiers
REVERSE VOLTAGE
50 TO 600 VOLTS
FORWARD CURRENT
1.0 AMPERE
P b Lead(Pb)-Free
Features:
* Batch process design, excellent power dissipation offers better
reverse leakage current and thermal resistance.
* Low profile surface mounted application in order to optimize
board space.
* Tiny plastic SMD package.
* High current capability.
* Super fast reovery time for switching mode application.
* High surge current capability.
* Glass passivated chip junction.
SOD-123H
Mechanical Data:
* Case : Molded plastic, JEDEC SOD-123H
* Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026
* Polarity : Indicated by cathode band
* Mounting Position : Any
* Weight : 0.011 gram
SOD-123H Outline Dimension
B
unit:mm
C
SOD-123H
Dim
A
B
C
H
J
A
J
H
WEITRON
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H
1/3
Min
Max
1.40
1.80
3.30
3.70
-
0.30(TYP)
-
0.80(TYP)
0.6
1.00
05-Dec-08
SFM11MH thru
SFM18MH
Maximum Ratings (TA=25ºC Unless Otherwise noted)
Symbol
SFM11
MH
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
150
200
300
400
500
600
V
Maximum RMS Voltage
VRMS
35
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
150
200
300
400
500
600
V
Maximum Average Forward
Rectified Current @TA=50°C
SFM12 SFM13 SFM14 SFM15 SFM16 SFM17 SFM18
MH
MH
MH
MH
MH
MH
MH
Unit
Characteristics
IF(AV)
1.0
A
IFSM
25
A
Peak Forward Surge Current,
8.3 ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method)
Maximum Instantaneous At 1.0A DC
VF
Maximum DC Reverse Current @TA=25 C
0.95
1.25
5.0
IR
At Rated DC Blocking Voltage @TA=100 C
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
R JA
TJ
Storage Temperature Range
TSTG
Typical Thermal Resistance (Note 2)
V
1.70
uA
100
10(TYP)
PF
42(TYP)
C/W
-65 to +175
C
-65 to +175
C
Device Marking
Item
Marking
Item
Marking
SFM11MH
S1
SFM15MH
S5
SFM12MH
S2
SFM16MH
S6
SFM13MH
S3
SFM17MH
S6
SFM14MH
S4
SFM18MH
S7
WEITRON
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2/3
05-Dec-08
SFM11MH thru
SFM18MH
Rating and characteristic curves (SFM11MH THRU SFM18MH)
AVERAGE FORWARD CURRENT,(A)
H
M
H
M
H
~S
FM
18
15
M
SF
M
17
M
H
SF
M
1.0
~S
FM
16
~S
FM
14
SF
M1
1M
H
.1
TJ=25 C
.01
.001
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE,(V)
FIG.1-TYPICAL FORWARD CHARACTERISTICS
50
NONINDUCTIVE
10
NONINDUCTIVE
( )
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
( )
1
NONINDUCTIVE
OSCILLISCOPE
(NOTE 1)
1.2
1.0
0.8
Single Phase
0.6
Half Wave 60Hz
Resistive Or Inductive Load
0.4
0.2
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( C)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
Pulse Width 300us
1% Duty Cycle
PEAK FORWARD SURGE CURRENT,(A)
INSTANTANEOUS FORWARD CURRENT,(A)
MH
10
25
20
15
8.3ms Single Half
TJ=25 C
Sine Wave
10
JEDEC method
5
0
1
5
(+)
50
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
70
JUNCTION CAPACITANCE,(pF)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
trr
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
60
50
40
30
20
10
0
-1.0A
.01
1cm
.5
1
5
10
50
100
FIG.5-TYPICAL JUNCTION CAPACITANCE
50 / 10ns / cm
WEITRON
.1
REVERSE VOLTAGE,(V)
SET TIME BASE FOR
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.05
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05-Dec-08