R2A20113DD/SP Critical Conduction Mode PFC Control IC REJ03F0279-0100 Rev.1.00 Oct 10, 2008 Description The R2A20113 controls a boost converter to provide a active power factor correction. The R2A20113 adopts critical conduction mode for power factor correction and realizes high efficiency and a low switching noise by zero current switching. Because the zero current is detected by using the GND current, the ZCD Auxiliary winding is unnecessary. The feedback loop open detection, two mode overvoltage protection, overcurrent protection are built in the R2A20113, and can constitute a power supply system of high reliability with few external parts. Features • Absolute Maximum Ratings Supply voltage Vcc: 24 V Operating junction temperature Tjopr: –40 to +150°C • Electrical characteristics UVLO operation start voltage VH: 12 V ± 0.8 V UVLO operation shutdown voltage VL: 9.2 V ± 0.7 V UVLO hysteresis voltage Hysuvl: 2.8 V ± 0.7 V • Functions Boost converter control with critical conduction mode Two mode overvoltage protection Mode1: Dynamic OVP corresponding to a voltage rise by load change Mode2: Static OVP corresponding to overvoltage in stable Feedback loop open detection Overcurrent protection Package lineup: Pb-free SOP-8 (JEDEC)/DILP-8 REJ03F0279-0100 Rev.1.00 Oct 10, 2008 Page 1 of 6 R2A20113DD/SP Pin Arrangement FB 1 8 VCC COMP 2 7 OUT RT 3 6 GND VREF 4 5 CS (Top view) Pin Functions Pin No. 1 2 3 4 5 6 7 8 Pin Name FB COMP RT Input/Output Input Output Input/Output Error amplifier input terminal Error amplifier output terminal A resistor connection terminal for RAMP current setting VREF CS GND OUT VCC Output Input — Output Input Reference voltage output terminal Zero current detection and overcurrent detection input terminal Ground Power MOSFET drive terminal Supply voltage terminal REJ03F0279-0100 Rev.1.00 Oct 10, 2008 Page 2 of 6 Function R2A20113DD/SP Block Diagram VREF 4 VREF: 5V 8 VCC UVLO ON: 12V OFF: 9.2V Zero Current Detector 40k CS 5 S Q 27.5V Delay R Q OCP COMP – + 7 OUT Restart 6 GND 5p S Q –0.4V R Q GD Disable OVP BLOCK COMP Discharge – + Ramp Low Detect – + RT 3 1V FB Error Amp – + S Q 1 FB 2.51V R 0.2V 2 COMP 4.0V 10p Static OVP FB + GD Disable – VFB × 1.09V/100mVhys Dynamic OVP COMP Discharge + – VFB × 1.05V – + FB open detect OVP BLOCK REJ03F0279-0100 Rev.1.00 Oct 10, 2008 Page 3 of 6 0.5V/0.2Vhys R2A20113DD/SP Absolute Maximum Ratings (Ta = 25°C) Item Supply voltage OUT peak current OUT DC current COMP terminal current RT terminal current Vref terminal current Vref terminal voltage FB terminal voltage CS terminal voltage Power dissipation Operating junction temperature Storage temperature Notes: 1. 2. 3. 4. Symbol Vcc Ipk-out Idc-out Icomp Irt Iref Vt-ref Vt-fb Vcs Pt Tj-opr Tstg Ratings –0.3 to 24 ±0.9 ±100 ±1 –50 –5 –0.3 to Vref + 0.3 –0.3 to +5 –1.5 to +0.3 0.68 –40 to +150 –55 to +150 Unit V A mA mA µA mA V V V W °C °C Rated voltages are with reference to the GND terminal. For rated currents, inflow to the IC is indicated by (+), and outflow by (–). Shows the transient current when driving a capacitive load. In case of R2A20113DD (DILP): θja = 120°C/W In case of R2A20113SP (SOP): θja = 120°C/W This value is a thing mounting on 40 × 40 × 1.6 [mm], a glass epoxy board of wiring density 10%. REJ03F0279-0100 Rev.1.00 Oct 10, 2008 Page 4 of 6 Note 3 4 R2A20113DD/SP Electrical Characteristics (Ta = 25°C, Vcc = 12 V, CS = GND, FB = COMP, RRT = 200 kΩ) Item Supply VREF Error amplifier RT Symbol Min Typ Max Unit Test Conditions UVLO turn-on threshold Vuvlh 11.2 12 12.8 V UVLO turn-off threshold Vuvll 8.5 9.2 9.9 V UVLO hysteresis Hysuvl 2.1 2.8 3.5 V Standby current Istby — 95 180 µA Operating current Icc — 2.6 4 mA Reference voltage Vref 4.85 5.00 5.15 V Line regulation Vref-line — 5 20 mV Isource = 0 mA, Vcc = 10 V to 24 V Load regulation Vref-load — 5 20 mV Isource = 0 mA to –5 mA Temperature stability dVref — ±80 — ppm/°C Feedback voltage Vfb 2.41 2.51 2.61 V Input bias current Ifb 0.1 0.25 0.75 µA Measured pin: FB Open loop gain Av — 55 — dB *1 Upper clamp voltage Vclamp-comp 3.75 4.0 4.25 V FB = 2.0 V, COMP: Open Low voltage Vl-comp — 0.1 0.3 V FB = 3.0 V, COMP: Open Source current Isrc-comp –185 –120 –40 µA FB = 1 V, COMP = 2.5 V Sink current 1 Isnkcomp1 — 120 — µA *1 Vcc = Vuvlh – 0.2 V Isource = 0 mA Ta = –40 to 125°C * 1 FB-COMP short Sink current 2 Isnkcomp2 180 300 450 µA FB = 3.5 V, COMP = 2.5 V Transconductance gm 90 150 220 µS FB = 2.5 V, COMP = 2.5 V RAMP offset voltage Voff-ramp — 1.0 — V *1 RT voltage V-rt 1.8 2.0 2.2 V RT = 200 kΩ Zero ZCD threshold voltage Vzcd –8 –2 0 mV current detector Input bias current Ics –80 –47 –20 µA Vcs = 0 V Restart Restart time delay Tstart 65 130 280 µs FB = 2.0 V, COMP = 2.5 V OUT Rise time tr-out — 30 100 ns CL = 1000 pF, FB = 2.0 V, COMP = 2.5 V Fall time tf-out — 30 100 ns CL = 1000 pF, FB = 2.0 V, COMP = 2.5 V OUT low voltage Vol1-out — 0.08 0.2 V Isink = 20 mA Vol2-out — 0.05 0.7 V Isink = 10 mA, Vcc = 5 V OUT high voltage Voh-out 11.5 11.9 — V Isource = –20 mA * OCP threshold voltage Vocp –0.44 –0.4 –0.36 V Dynamic OVP threshold voltage Vdovp VFB× 1.035 VFB× 1.050 VFB× 1.065 V Static OVP threshold voltage Vsovp VFB× 1.075 VFB× 1.090 VFB× 1.105 V COMP = Open Static OVP hysteresis Hys-sovp 50 100 150 mV COMP = Open FB open detect threshold voltage Vfbopen 0.45 0.50 0.55 V COMP = Open FB open detect hysteresis Hysfbopen 0.16 0.20 0.24 V COMP = Open Over current protection Over voltage protection Note: 1. Design spec. REJ03F0279-0100 Rev.1.00 Oct 10, 2008 Page 5 of 6 1 R2A20113DD/SP Package Dimensions JEITA Package Code P-DIP8-6.3x9.6-2.54 RENESAS Code PRDP0008AF-A Previous Code DP-8B MASS[Typ.] 0.51g D 5 E 8 1 4 b3 0.89 A1 A Z Reference Symbol L e1 D E A A1 bp b3 c θ e Z L θ bp e c e1 JEITA Package Code P-SOP8-3.95x4.9-1.27 RENESAS Code PRSP0008DD-C *1 Previous Code FP-8DCV Min Nom Max 7.62 9.6 10.6 6.3 7.4 5.06 0.5 0.38 0.48 0.58 1.3 0.20 0.25 0.35 0° 15° 2.29 2.54 2.79 1.27 2.54 MASS[Typ.] 0.085g F D 8 Dimension in Millimeters NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. 5 c *2 E HE bp Index mark Terminal cross section ( Ni/Pd/Au plating ) 1 Z Reference Dimension in Millimeters Symbol 4 e *3 bp x M A L1 A1 θ L y Detail F REJ03F0279-0100 Rev.1.00 Oct 10, 2008 Page 6 of 6 D E A2 A1 A bp b1 c c1 θ HE e x y Z L L1 Min Nom Max 4.90 5.30 3.95 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 0° 8° 5.80 6.10 6.20 1.27 0.25 0.10 0.75 0.40 0.60 1.27 1.08 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. 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