2SA1744

2SA1744
®
Pb
2SA1744
Pb Free Plating Product
Silicon PNP Epitaxial Power Transistor
DESCRIPTION
The 2SA1744 is a power transistor developed
for high-speed switching and features a high hFE at
Low VCE(sat). This transistor is ideal for use as
a driver in DC/DC converters and actuators.
・With TO-220F package
・Low collector saturation voltage
·Wide area of safe operation
E
B
APPLICATIONS
・Power amplifier applications
・For power switching applications
C
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−100
V
Collector to emitter voltage
VCEO
−60
V
Emitter to base voltage
VEBO
−7.0
V
Collector current (DC)
IC(DC)
−15
A
IC(pulse)*
−30
A
IB(DC)
−7.5
A
Total power dissipation
PT (Tc = 25°C)
30
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current (pulse)
Base current (DC)
* PW ≤ 300 µs, duty cycle ≤ 10%
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
2SA1744
®
(/(&75,&$/&+$5$&7(5,67,&67A °°&
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = −8.0 A, IB = −0.8 A, L = 1 mH
−60
V
Collector to emitter voltage
VCEX(SUS)
IC = −8.0 A, IB1 = −IB2 = −0.8 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
−60
V
Collector cutoff current
ICBO
VCB = −60 V, IE = 0
−10
µA
Collector cutoff current
ICER
VCE = −60 V, RBE = 50 Ω, TA = 125°C
−1.0
mA
Collector cutoff current
ICEX1
VCE = −60 V, VBE(OFF) = 1.5 V
−10
µA
Collector cutoff current
ICEX2
VCE = −60 V, VBE(OFF) = 1.5 V,
TA = 125°C
−1.0
mA
Emitter cutoff current
IEBO
VEB = −5.0 V, IC = 0
−10
µA
DC current gain
hFE1*
VCE = −2.0 V, IC = −1.5 A
100
DC current gain
hFE2*
VCE = −2.0 V, IC = −3.0 A
100
DC current gain
hFE3*
VCE = −2.0 V, IC = −8.0 A
60
400
Collector saturation voltage
VCE(sat)1*
IC = −8.0 A, IB = −0.4 A
−0.3
V
Collector saturation voltage
VCE(sat)2*
IC = −12 A, IB = −0.6 A
−0.5
V
Base saturation voltage
VBE(sat)1*
IC = −8.0 A, IB = −0.4 A
−1.2
V
Base saturation voltage
VBE(sat)2*
IC = −12 A, IB = −0.6 A
−1.5
V
Collector capacitance
Cob
VCB = −10 V, IE = 0, f = 1.0 MHz
300
pF
80
MHz
Gain bandwidth product
fT
VCE = −10 V, IC = −1.5 A
Turn-on time
ton
Storage time
tstg
IC = −8.0 A, RL = 6.3 Ω,
IB1 = −IB2 = −0.4 A, VCC ≅ −50 V
0.3
µs
1.5
µs
0.3
µs
Refer to the test circuit.
Fall time
tf
3XOVHWHVW3:≤µVGXW\F\FOH≤
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Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/