DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT: mm) switching and features a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • High hFE and low VCE(sat): hFE ≥ 100 (VCE = −2 V, IC = −3 A) VCE(sat) ≤ 0.3 V (IC = −8 A, IB = −0.4 A) • Full-mold package that does not require an insulating board or bushing Electrode Connection 1. Base 2. Collector 3. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −100 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −7.0 V Collector current (DC) IC(DC) −15 A IC(pulse)* −30 A IB(DC) −7.5 A Total power dissipation PT (Tc = 25°C) 30 W Total power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) * PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13160EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 6$ (/(&75,&$/&+$5$&7(5,67,&67A °°& Parameter Symbol Conditions MIN. TYP. MAX. Collector to emitter voltage VCEO(SUS) IC = −8.0 A, IB = −0.8 A, L = 1 mH −60 V Collector to emitter voltage VCEX(SUS) IC = −8.0 A, IB1 = −IB2 = −0.8 A, VBE(OFF) = 1.5 V, L = 180 µH, clamped −60 V Collector cutoff current ICBO VCB = −60 V, IE = 0 −10 µA Collector cutoff current ICER VCE = −60 V, RBE = 50 Ω, TA = 125°C −1.0 mA Collector cutoff current ICEX1 VCE = −60 V, VBE(OFF) = 1.5 V −10 µA Collector cutoff current ICEX2 VCE = −60 V, VBE(OFF) = 1.5 V, TA = 125°C −1.0 mA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −10 µA DC current gain hFE1* VCE = −2.0 V, IC = −1.5 A 100 DC current gain hFE2* VCE = −2.0 V, IC = −3.0 A 100 DC current gain hFE3* VCE = −2.0 V, IC = −8.0 A 60 400 Collector saturation voltage VCE(sat)1* IC = −8.0 A, IB = −0.4 A −0.3 V Collector saturation voltage VCE(sat)2* IC = −12 A, IB = −0.6 A −0.5 V Base saturation voltage VBE(sat)1* IC = −8.0 A, IB = −0.4 A −1.2 V Base saturation voltage VBE(sat)2* IC = −12 A, IB = −0.6 A −1.5 V Collector capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 300 pF 80 MHz Gain bandwidth product fT VCE = −10 V, IC = −1.5 A Turn-on time ton Storage time tstg IC = −8.0 A, RL = 6.3 Ω, IB1 = −IB2 = −0.4 A, VCC ≅ −50 V 0.3 µs 1.5 µs 0.3 µs Refer to the test circuit. Fall time tf 3XOVHWHVW3:≤µVGXW\F\FOH≤ KFE&/$66,),&$7,21 Marking M L K hFE2 100 to 200 150 to 300 200 to 400 6:,7&+,1*7,0(WonWstgWf7(67&,5&8,7 %DVHFXUUHQW ZDYHIRUP &ROOHFWRUFXUUHQW ZDYHIRUP Unit 'DWD6KHHW'(-9'6 6$ ,&'HUDWLQJG7 7RWDO3RZHU'LVVLSDWLRQ37: 7<3,&$/&+$5$&7(5,67,&67A °°& &DVH7HPSHUDWXUH7&°& &DVH7HPSHUDWXUH7&°& &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ 6LQJOHSXOVH &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 7UDQVLHQW7KHUPDO5HVLVWDQFH5WKM−F°&: &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 :LWKRXWKHDWVLQN :LWKLQILQLWHKHDWVLQN 3XOVH:LGWK3:V 'DWD6KHHW'(-9'6 )DOO7LPHWIµV 6WRUDJH7LPHWVWJµV 7XUQ2Q7LPHWRQµV &ROOHFWRU&DSDFLWDQFH&RES) %DVH6DWXUDWLRQ9ROWDJH9%(VDW9 &ROOHFWRU6DWXUDWLRQ9ROWDJH9&(VDW9 3XOVHWHVW *DLQ%DQGZLGWK3URGXFWI70+] '&&XUUHQW*DLQK)( &ROOHFWRU&XUUHQW,&$ 6$ 3XOVHWHVW &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ &ROOHFWRUWR%DVH9ROWDJH9&%9 'DWD6KHHW'(-9'6 &ROOHFWRU&XUUHQW,&$ 6$ >0(02@ 'DWD6KHHW'(-9'6 6$ • The information in this document is current as of July, 2001. 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