DATA SHEET
DARLINGTON POWER TRANSISTOR
2SA1841
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
The 2SA1841 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such
as PWM control for pulse motors or brushless motors in OA and FA equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Auto-mounting possible in radial taping specifications
• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
• High DC current amplifiers due to Darlington connection
hFE = 4,000 to 20,000 @VCE = −2.0 V, IC = −4.0 A
• On-chip C-to-E reverse diode
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
−100
V
Collector to emitter voltage
VCEO
−100
V
Emitter to base voltage
VEBO
−8.0
V
Collector current (DC)
IC(DC)
−8.0
A
Collector current (pulse)
IC(pulse)
−16
A
Base current (DC)
IB(DC)
−0.8
A
1.8
W
PW ≤ 10 ms, duty cycle ≤ 2%
Ta = 25°C
Total power dissipation
PT
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15590EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
2SA1841
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Parameter
Symbol
Conditions
MIN.
MAX.
Unit
Collector cutoff current
ICBO
VCB = −100 V, IE = 0
−1.0
µA
Collector cutoff current
IEBO
VEB = −5.0 V, IC = 0
−5.0
mA
DC current gain
hFE1*
VCE = −2.0 V, IC = −4.0 A
4,000
20,000
−
DC current gain
hFE2*
VCE = −2.0 V, IC = −8.0A
500
Collector saturation voltage
VCE(sat)*
IC = −4.0 A, IB = −4.0 mA
Base saturation voltage
VBE(sat)*
Turn-on time
ton
Storage time
tstg
Fall time
IC = −4.0 A
IB1 = −IB2 = −4.0 mA
RL = 12.5 Ω, VCC = −50 V
tf
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Marking
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hFE2
4,000 to 10,000
8,000 to 20,000
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Electrode Connection
1. Base
2. Collector
3. Emitter
TYP.
'DWD6KHHW'(-9'6
−
−1.5
V
−2.0
V
0.2
µs
1.5
µs
0.7
µs
2SA1841
IC Derating dT (%)
Total Power Dissipation PT (W)
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Ambient Temperature Ta (°C)
Collector
CollectorCurrent
Current IcIC(A)(A)
Transient Thermal Resistance rth(j-a)(t) (°C/W)
Ambient Temperature Ta (°C)
Single pulse
Pulse Width PW (s)
Collector to Emitter Voltage VCE (V)
DC Current Gain hFE
Collector Current IC (A)
Pulse test
Collector to Emitter Voltage VCE (V)
'DWD6KHHW'(-9'6
Collector Current IC (A)
Pulse test
Base Saturation Voltage VBE(sat) (V)
Collector Saturation Voltage VCE(sat) (V)
2SA1841
Collector Current IC (A)
Collector Capacitance Cob (pF)
Gain Bandwidth Product fT (MHz)
Collector Current IC (A)
Collector to Base Voltage VCB (V)
Collector Current IC (A)
Pulse test
'DWD6KHHW'(-9'6
2SA1841
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Base current
waveform
Collector current
waveform
'DWD6KHHW'(-9'6
2SA1841
• The information in this document is current as of July, 2001. The information is subject to change
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M8E 00. 4