2SC4550K Pb Free Plating Product ® Pb 2SC4550K NPN Silicon Power Transistor for High Speed Switching TO-220FH/ITO-220AB DESCRIPTION ·Complements the 2SA1742. ·High hFE and low VCE(sat) ·For high-speed switching ·For use in drivers such as DC-DC converters and actuators. Unit:mm COLLECTOR 2 BASE 1 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3 12 TO-220FH Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-peak 14 A IB Base 3.5 A PT Total power dissipation current TC=25℃ 30 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ 2SC4550K ® ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 4.0A ; IB= 0.4A, L= 1mH 60 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 4.0A ; IB1= -IB2= 0.4A, VBE(OFF)=-1.5V, L=180μH,clamped 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A 0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A 0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 0.2A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 60V ; IE= 0 10 μA ICER Collector Cutoff Current VCE= 60V ; RBE= 50Ω,Ta=125℃ 1.0 mA ICEX Collector Cutoff Current VCE= 60V; VBE(off)= -1.5V VCE= 60V; VBE(off)= -1.5V,Ta=125℃ 10 1.0 μA mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 0.7A ; VCE= 2V 100 hFE-2 DC Current Gain IC= 1.5A ; VCE= 2V 100 hFE-3 DC Current Gain IC= 4.0A ; VCE= 2V 60 COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 100 pF Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V 150 MHz fT CONDITIONS MIN TYP. B B B B MAX UNIT 400 Switching times ton Turn-on Time tstg Storage Time tf IC= 4.0A ,RL= 12.5Ω, IB1= -IB2= 0.2A,VCC≈ 50V Fall Time 0.3 μs 1.5 μs 0.3 μs hFE-2 Classifications M L K 100-200 150-300 200-400 Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 2/2 http://www.thinkisemi.com/