MUR3060G ® Pb MUR3060G Pb Free Plating Product 30 Ampere Single Glass Passivated Chip Ultrafast Recovery Rectifier Diode TO-220AC Features Glass passivated chip junction EPI wafer Ultrafast recovery time for high efficiency Low reverse leakage current High surge capacity Unit : inch (mm) .419(10.66) .387(9.85) .196(5.00) .163(4.16) .139(3.55) MIN .054(1.39) .177(4.5)MAX .038(0.96) .019(0.50) .624(15.87) .548(13.93) Case: TO-220AC heatsink Terminals: Lead solderable per MIL-STD-202, Method 208 Polarity: As marked Standard packaging: Any Weight: 2.5 gram approximately .50(12.7)MIN .269(6.85) Mechanical Data .226(5.75) .045(1.15) .025(0.65)MAX .1(2.54) .1(2.54) TO-220AC Heatsink MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL MUR3060G UNIT Maximum Recurrent Peak Reverse Voltage VRRM 600 V Maximum RMS Voltage VRMS 420 V VDC 600 V IF(AV) 30.0 A IFSM 250 A VF 1.7 V 5.0 uA 100 uA Maximum DC Blocking Voltage Maximum Average Forward Rectified o Current TC=125 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 30.0 A o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR Maximum Reverse Recovery Time (Note 1) Trr 60 nS Typical junction Capacitance (Note 2) CJ 120 pF TJ, TSTG -55 to +150 Operating Junction and Storage Temperature Range o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ MUR3060G ® FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 320 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 30 25 20 15 10 5 60 Hz Resistive or Inductive load 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 280 240 200 160 120 80 40 0 0 50 100 150 1 100 NUMBER OF CYCLES AT 60Hz o CASE TEMPERATURE, C FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 1000 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 1.0 MUR3060G 0.1 o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 2/2 http://www.thinkisemi.com/