MUR2020CTD thru MUR2060CTD ® Pb MUR2020CTD thru MUR2060CTD Pb Free Plating Product 20.0 Ampere Dual Doulber Tandem Ultra Fast Recovery Diodes TO-220AB .196(5.00) .163(4.16) .139(3.55) MIN .054(1.39) .045(1.15) ¬ Case: TO-220AB Heatsink ¬ Epoxy: UL 94V-0 rate flame retardant ¬ Terminals: Solderable per MIL-STD-202 method 208 ¬ Polarity: As marked on body ¬ Mounting position: Any ¬ Weight: 2.24 gram approximately .038(0.96) .019(0.50) .1(2.54) .548(13.93) .624(15.87) .177(4.5)MAX Mechanical Data .50(12.7)MIN .269(6.85) ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Unit : inch (mm) .419(10.66) .387(9.85) .226(5.75) Features .025(0.65)MAX .1(2.54) Case Case Positive Common Cathode Suffix "CT" Negative Common Anode Suffix "CTA" Case Doubler Tandem Polarity Suffix "CTD" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL MUR2020CT MUR2040CT MUR2060CT MUR2020CTA MUR2040CTA MUR2060CTA UNIT MUR2020CTD MUR2040CTD MUR2060CTD Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 420 V Maximum DC Blocking Voltage VDC 200 400 600 V Maximum Average Forward Rectified 20.0 IF(AV) o Current TC=125 C A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load IFSM 200 VF 0.975 175 A (JEDEC method) Maximum Instantaneous Forward Voltage @ 10.0 A o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR Maximum Reverse Recovery Time (Note 1) Trr Typical junction Capacitance (Note 2) CJ Operating Junction and Storage Temperature Range TJ, TSTG 1.5 1.3 V 10.0 uA 250 uA 35 nS 70 120 -55 to +150 pF o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Rev.04 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ MUR2020CTD thru MUR2060CTD ® FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 20 16 10 8 6 4 60 Hz Resistive or Inductive load 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 175 150 MUR2020CTD 125 100 MUR2040CTD-MUR2060CTD 75 50 25 0 0 50 100 150 1 CASE TEMPERATURE, C 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 100 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 NUMBER OF CYCLES AT 60Hz o MUR2020CTD MUR2040CTD 10 MUR2060CTD 0.1 TJ=25 oC PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Rev.04 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/2 http://www.thinkisemi.com/