® MBR2035CT thru MBR20200CT Pb MBR2035CT thru MBR20200CT Pb Free Plating Product 20.0 Ampere Schottky Barrier Rectifiers TO-220AB Unit : inch (mm) Features .139(3.55) MIN .054(1.39) .038(0.96) .019(0.50) Cases: JEDEC TO-220AB molded plastic Terminals: Pure tin plated, lead free. solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams .1(2.54) .624(15.87) .548(13.93) .269(6.85) .045(1.15) Mechanical Data .196(5.00) .163(4.16) .50(12.7)MIN .419(10.66) .387(9.85) .226(5.75) Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: o 260 C/10 seconds,0.25”(6.35mm)from case .177(4.5)MAX .025(0.65)MAX .1(2.54) AC Positive CT AC Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol MBR MBR MBR Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current o at TC=135 C Peak Repetitive Forward Current (Rated VR, Square Wave, o 20KHz) at Tc=135 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 1) VRRM VRMS VDC I(AV) 2035 CT 35 24 35 IFSM IRRM Maximum Instantaneous Reverse Current @ Tc=25℃ at Rated DC Blocking Voltage @ Tc=125℃ IR 0.1 15 dV/dt Typical Junction Capacitance Cj RθJC TJ TSTG Storage Temperature Range Notes: A 20 A 150 0.57 0.84 0.72 Voltage Rate of Change, (Rated VR) MBR MBR MBR Units 2090 20100 20200 CT CT CT V 90 100 200 V 63 70 140 V 90 100 200 20 1.0 VF Operating Junction Temperature Range MBR 2060 CT 60 42 60 2050 CT 50 35 50 IFRM Maximum Instantaneous Forward Voltage at (Note 2) O IF=10A, TC=25 C IF=10A, TC=125OC IF=20A, TC=25OC IF=20A, TC=125OC Typical Thermal Resistance Per Leg (Note 3) 2045 CT 45 31 45 A 0.5 A 0.99 0.87 1.23 1.10 0.85 0.75 0.95 0.85 0.80 0.70 0.95 0.85 0.1 10 10,000 400 5.0 320 1.0 2.0 -65 to +150 -65 to +175 V mA mA V/uS pF o C/W o C o C 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ ® MBR2035CT thru MBR20200CT FIG.1- FORWARD CURRENT DERATIN CURVE FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 20 PEAK FORWARD SURGE CURRENT. (A) 150 AVERAGE FORWARD CURRENT. (A) RESISTIVE OR INDUCTIVE LOAD 16 12 8 4 0 0 50 100 Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method 125 100 75 50 25 0 150 1 10 o CASE TEMPERATURE. ( C) FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 50 40 Tj=150 0C FIG.4- TYPICAL REVERSE CHARACTERISTICS PER LEG 10 INSTANTANEOUS REVERSE CURRENT. (mA) INSTANTANEOUS FORWARD CURRENT. (A) 10 1 Tj=25 0C 0.1 MBR2035CT-MBR2045CT MBR2050CT & MBR2060CT MBR20100CT MBR20200CT Tj=1250C 1 Tj=75 0C 0.1 0.01 Tj=250C Pulse Width=300 s 1% Duty Cycle 0.01 0 0.1 0.2 0.3 0.4 0.5 0.001 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TRANSIENT THERMAL IMPEDANCE. ( OC/W) JUNCTION CAPACITANCE.(pF) 20 40 60 FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG 5,000 Tj=25 0C f=1.0MHz Vsig=50mVp-p 2,000 1,000 500 200 MBR2035CT-MBR2045CT MBR2050CT & MBR20200CT 100 1.0 0 MBR2035CT-MBR2045CT MBR2050CT & MBR20100CT MBR20200CT 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FORWARD VOLTAGE. (V) 0.1 100 NUMBER OF CYCLES AT 60Hz 10 REVERSE VOLTAGE. (V) 100 100 10.0 1 0.1 0.01 0.1 1 10 100 T, PULSE DURATION. (sec) Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/