U20D20S/U20D40S/U20D60S - Thinki Semiconductor Co.,Ltd.

U20D20S thru U20D60S
®
Pb
U20D20S/U20D40S/U20D60S
Pb Free Plating Product
20 Ampere Dual Tandem Type Ultra Fast Recovery Rectifier Diodes
TO-3P/TO-247AD
Unit: inch (mm)
Features
.839(21.3)
.819(20.8)
.600(15.25)
.580(14.75)
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.798(20.25)
.777(19.75)
.095(2.4)
Mechanical Data
.199(5.05)
.175(4.45)
.142(3.6)
.125(3.2)
.170(4.3)
.145(3.7)
.640(16.25)
.620(15.75)
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
o
260 C, 0.16”(4.06mm)from case for 10 seconds
.087(2.2)
.070(1.8)
.030(0.75)
.017(0.45)
Cases: TO-3P/TO-247AD molded plastic
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 6.5 gram approximately
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
Case
Case
Case
Case
Reverse Doubler
Doubler
Negative
Positive
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "S"
Suffix "A"
Suffix "D"
Suffix "C"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
U20D20S U20D40S U20D60S
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
200
400
600
V
Maximum RMS Voltage
VRMS
140
280
420
V
Maximum DC Blocking Voltage
VDC
200
400
600
V
Maximum Average Forward Rectified
20.0
IF(AV)
o
Current TC=125 C
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
IFSM
200
VF
0.98
175
A
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 10.0 A
o
Maximum DC Reverse Current @TJ=25 C
o
At Rated DC Blocking Voltage @TJ=125 C
IR
Maximum Reverse Recovery Time (Note 1)
Trr
Typical junction Capacitance (Note 2)
CJ
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.7
1.3
V
5.0
uA
100
uA
35
nS
70
120
-55 to +150
pF
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
U20D20S thru U20D60S
®
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
200
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
20
16
10
8
6
4
60 Hz Resistive or
Inductive load
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
175
150
U20D20S
125
100
U20D40S-U20D60S
75
50
25
0
0
50
100
150
1
CASE TEMPERATURE, C
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1000
100
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
NUMBER OF CYCLES AT 60Hz
o
U20D20S
U20D40S
10
U20D60S
0.1
TJ=25 oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
o
TJ=125 C
100
10
o
TJ=25 C
1
0.1
0
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/