SFF2004GD thru SFF2008GD - Thinki Semiconductor Co.,Ltd.

SFF2004GD thru SFF2008GD
®
Pb
SFF2004GD thru SFF2008GD
Pb Free Plating Product
20.0 Ampere Isolated Doubler Tandem Super Fast Rectifier Diodes
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
Mechanical Data
¬ Case: ITO-220AB Isolated/Insulated
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity: As marked on body
¬ Mounting position: Any
¬ Weight: 2.24 gram approximately
.161(4.1)MAX
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
.1
(2.55)
(2.55)
.543(13.8)
.512(13.0)
.606(15.4)
.583(14.8)
.112(2.85)
.100(2.55)
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
Unit : inch (mm)
.272(6.9)
.248(6.3)
Features
Case
Case
Positive
Common Cathode
Suffix "G"
Negative
Common Anode
Suffix "GA"
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Doubler
Tandem Polarity
Suffix "GD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
SFF2004G SFF2006G SFF2008G
SFF2004GA SFF2006GA SFF2008GA UNIT
SFF2004GD SFF2006GD SFF2008GD
Maximum Recurrent Peak Reverse Voltage
VRRM
200
400
600
V
Maximum RMS Voltage
VRMS
140
280
420
V
Maximum DC Blocking Voltage
VDC
200
400
600
V
Maximum Average Forward Rectified
20.0
IF(AV)
o
Current TC=125 C
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
IFSM
200
VF
0.98
175
A
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 10.0 A
o
Maximum DC Reverse Current @TJ=25 C
o
At Rated DC Blocking Voltage @TJ=125 C
IR
Maximum Reverse Recovery Time (Note 1)
Trr
Typical junction Capacitance (Note 2)
CJ
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.7
1.3
V
10.0
uA
250
uA
35
nS
70
120
-55 to +150
pF
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
SFF2004GD thru SFF2008GD
®
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
200
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
20
16
10
8
6
4
60 Hz Resistive or
Inductive load
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
175
150
SFF2004GD
125
100
SFF2006GD-SFF2008GD
75
50
25
0
0
50
100
150
1
CASE TEMPERATURE, C
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1000
100
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
NUMBER OF CYCLES AT 60Hz
o
SFF2004GD
SFF2006GD
10
SFF2008GD
0.1
TJ=25 oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
o
TJ=125 C
100
10
o
TJ=25 C
1
0.1
0
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/