SK102 thru SK1020 ® Pb SK102 thru SK1020 Pb Free Plating Product 10.0 Ampere Surface Mount Schottky Barrier Rectifier SMC/DO-214AB Unit: inch (mm) Features .280(7.11) .260(6.60) .012(.305) .006(.152) Mechanical Data .245(6.22) .220(5.59) .128(3.25) .108(2.75) For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260oC / 10 seconds at terminals .103(2.62) .079(2.00) .050(1.27) .030(0.76) Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packaging: 16mm tape per EIA STD RS-481 Weight: 0.1 gram .008(.203) .002(.051) .320(8.13) .305(7.75) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @10A Maximum D.C. Reverse Current @ Tc=25 oC o at Rated DC Blocking Voltage @ Tc=125 C Typical Junction Capacitance (Note 2) VRRM VRMS VDC Typical Thermal Resistance (Note 1) Operating Junction Temperature Range RθJC TJ Storage Temperature Range TSTG Notes: SK 102 20 14 20 SK 103 30 21 30 SK 104 40 28 40 SK 105 50 35 50 SK 106 60 42 60 SK 109 90 63 90 SK SK 1010 1020 Units 100 200 V 70 140 V 100 200 V I(AV) 10.0 A IFSM 150 A VF IR Cj 0.55 0.7 0.85 0.1 10 5.0 0.5 15 400 300 0.95 250 4.0 -65 to +125 -65 to +150 -65 to +150 V mA mA pF o C/W o C o C 1. Thermal Resistance from Junction to Case Per Leg WITH Heat sink (2”x3”x0.25”) Al-plate. 2. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ SK102 thru SK1020 ® RATINGS AND CHARACTERISTIC CURVES(SK102 thru SK1020) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 175 FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 8 SK105-SK1020 SK102-SK104 6 4 PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 10 8.3ms Single Half Sine Wave JEDEC Method 125 100 75 50 2 25 1 2 5 10 20 NUMBER OF CYCLES AT 60Hz 0 0 50 100 o CASE TEMPERATURE. ( C) 50 100 150 FIG.4- TYPICAL REVERSE CHARACTERISTICS FIG.3- TYPICAL FORWARD CHARACTERISTICS 10 50 04 6 10 K1 SK SK INSTANTANEOUS FORWARD CURRENT. (A) 5- 10 SK 10 0 5 Tj=12 0 01 INSTANTANEOUS REVERSE CURRENT. (mA) S 2- 1 SK 910 SK 10 10 20 SK 1 Tj=25oC Pulse Width=300 s 1% Duty Cycle 1 Tj=750C 0.1 Tj=25 0C 0.01 MBRD820-MBRD8100 MBRD8150 0.001 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 C 0 0.9 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FORWARD VOLTAGE. (V) FIG.5- TYPICAL JUNCTION CAPACITANCE 100 TRANSIENT THERMAL IMPEDANCE. ( OC/W) JUNCTION CAPACITANCE.(pF) 4000 2000 Tj=25 0C 1000 800 600 SK 10 400 SK 2-S K1 10 K1 SK 200 9-S 06 01 10 0 20 100 0.1 0.4 1 4 10 REVERSE VOLTAGE. (V) 40 100 FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 10 1 0.1 0.01 0.1 1 T, PULSE DURATION. (sec) 10 100 Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/