SF2001G thru SF2008G - Thinki Semiconductor Co.,Ltd.

SF2001G thru SF2008G
®
Pb
SF2001G thru SF2008G
Pb Free Plating Product
20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode
TO-220AB
.139(3.55)
MIN
.054(1.39)
.045(1.15)
.624(15.87)
.50(12.7)MIN
¬ Case: TO-220AB Heatsink
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity: As marked on body
¬ Mounting position: Any
¬ Weight: 2.24 gram approximately
.177(4.5)MAX
Mechanical Data
.038(0.96)
.019(0.50)
.1(2.54)
.548(13.93)
.196(5.00)
.163(4.16)
.269(6.85)
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
Unit : inch (mm)
.419(10.66)
.387(9.85)
.226(5.75)
Features
.025(0.65)MAX
.1(2.54)
Case
Case
Positive
Common Cathode
Negative
Common Anode
Suffix "A"
Case
Doubler
Series Connection
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode
Common Anode Suffix "A"
Anode and Cathode Coexistence Suffix "D"
SYMBOL
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
400
600
V
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
V
Maximum Average Forward Rectified
SF2001G
SF2002G
SF2005G
SF2006G
SF2008G
UNIT
SF2001GD SF2002GD SF2004GD SF2005GD SF2006GD SF2008GD
20.0
IF(AV)
o
Current TC=125 C
SF2004G
SF2001GA SF2002GA SF2004GA SF2005GA SF2006GA SF2008GA
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
IFSM
200
VF
0.975
175
A
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 10.0 A
o
Maximum DC Reverse Current @TJ=25 C
o
At Rated DC Blocking Voltage @TJ=125 C
IR
Maximum Reverse Recovery Time (Note 1)
Trr
Typical junction Capacitance (Note 2)
CJ
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.5
1.3
V
10.0
uA
250
uA
35
nS
70
120
-55 to +150
pF
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
SF2001G thru SF2008G
®
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
200
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
20
16
10
8
6
4
60 Hz Resistive or
Inductive load
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
175
150
SF2001G-SF2004G
125
100
SF2005G-SF2008G
75
50
25
0
0
50
100
150
1
CASE TEMPERATURE, C
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1000
15
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
NUMBER OF CYCLES AT 60Hz
o
SF2001G-SF2004G
SF2005G-SF2007G
10
SF2008G
0.1
TJ=25 oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
o
TJ=125 C
100
10
o
TJ=25 C
1
0.1
0
1.6
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/