SF2001G thru SF2008G ® Pb SF2001G thru SF2008G Pb Free Plating Product 20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode TO-220AB .139(3.55) MIN .054(1.39) .045(1.15) .624(15.87) .50(12.7)MIN ¬ Case: TO-220AB Heatsink ¬ Epoxy: UL 94V-0 rate flame retardant ¬ Terminals: Solderable per MIL-STD-202 method 208 ¬ Polarity: As marked on body ¬ Mounting position: Any ¬ Weight: 2.24 gram approximately .177(4.5)MAX Mechanical Data .038(0.96) .019(0.50) .1(2.54) .548(13.93) .196(5.00) .163(4.16) .269(6.85) ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Unit : inch (mm) .419(10.66) .387(9.85) .226(5.75) Features .025(0.65)MAX .1(2.54) Case Case Positive Common Cathode Negative Common Anode Suffix "A" Case Doubler Series Connection Suffix "D" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Common Cathode Common Anode Suffix "A" Anode and Cathode Coexistence Suffix "D" SYMBOL Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 V Maximum Average Forward Rectified SF2001G SF2002G SF2005G SF2006G SF2008G UNIT SF2001GD SF2002GD SF2004GD SF2005GD SF2006GD SF2008GD 20.0 IF(AV) o Current TC=125 C SF2004G SF2001GA SF2002GA SF2004GA SF2005GA SF2006GA SF2008GA A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load IFSM 200 VF 0.975 175 A (JEDEC method) Maximum Instantaneous Forward Voltage @ 10.0 A o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR Maximum Reverse Recovery Time (Note 1) Trr Typical junction Capacitance (Note 2) CJ Operating Junction and Storage Temperature Range TJ, TSTG 1.5 1.3 V 10.0 uA 250 uA 35 nS 70 120 -55 to +150 pF o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ SF2001G thru SF2008G ® FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 20 16 10 8 6 4 60 Hz Resistive or Inductive load 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 175 150 SF2001G-SF2004G 125 100 SF2005G-SF2008G 75 50 25 0 0 50 100 150 1 CASE TEMPERATURE, C 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 15 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 NUMBER OF CYCLES AT 60Hz o SF2001G-SF2004G SF2005G-SF2007G 10 SF2008G 0.1 TJ=25 oC PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/